Quantitative Assessment of the Effects of Strain on Future III-V Digital Applications

2012 ◽  
Vol 9 (1) ◽  
pp. 37-42
Author(s):  
Umesh P. Gomes ◽  
Kumud Ranjan ◽  
Subhra Chowdhury ◽  
Palash Das ◽  
Servin Rathi ◽  
...  
Keyword(s):  
Band Structure ◽  
Leakage Current ◽  
Quantitative Assessment ◽  
Compressive Strain ◽  
Design Parameters ◽  
Subthreshold Slope ◽  
Gate Leakage Current ◽  
Active Device ◽  
Strain Effects ◽  
Induced Changes

In this paper the strain effects on the performance and reliability of future digital III-V device are discussed. Strain is incorporated in the device during fabrication, packaging, and operation. A high amount of strain can introduce defects and cracks in the epilayer. The band structure of the active device region is also altered due to strain. These strain induced changes determine performance, reliability, and lifetime of the device. Therefore, it is necessary to consider strain effects while designing a device for a particular application. Here, compressive-strain-induced changes are used as design parameters and their impact on the logic performance of the device is studied. It is interpreted that the design significantly decreases the gate leakage current and improves the subthreshold slope.

scholarly journals Strain effects on polycrystalline germanium thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Toshifumi Imajo ◽  
Takashi Suemasu ◽  
Kaoru Toko
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Growth Promotion ◽  
Large Strain ◽  
Compressive Strain ◽  
Substrate Material ◽  
Large Crystal ◽  
Solid Phase Crystallization ◽  
Strain Effects ◽  
Thin Film Devices

AbstractPolycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.

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