Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors

Xiaodong Yang; Younsung Choi; Jisong Lim; Toshikazu Nishida; Scott Thompson

doi:10.1063/1.3603023

Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3603023 ◽

2011 ◽

Vol 110 (1) ◽

pp. 014511 ◽

Cited By ~ 2

Author(s):

Xiaodong Yang ◽

Younsung Choi ◽

Jisong Lim ◽

Toshikazu Nishida ◽

Scott Thompson

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Induced Changes

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Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2716874 ◽

2007 ◽

Vol 101 (7) ◽

pp. 073709 ◽

Cited By ~ 12

Author(s):

V. Nam Do ◽

P. Dollfus

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage

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Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1598 ◽

2004 ◽

Vol 43 (No. 12B) ◽

pp. L1598-L1600 ◽

Cited By ~ 2

Author(s):

Takuji Hosoi ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Effect Transistor ◽

Soft Breakdown

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Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.3000615 ◽

2008 ◽

Vol 93 (15) ◽

pp. 153505 ◽

Cited By ~ 8

Author(s):

S. Y. Son ◽

Y. S. Choi ◽

P. Kumar ◽

H. W. Park ◽

T. Nishida ◽

...

Keyword(s):

Dielectric Constant ◽

Metal Oxide ◽

Leakage Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Induced Changes

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The low leakage current in floating body GaN metal oxide semiconductor field effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2010.07.005 ◽

2010 ◽

Vol 54 (12) ◽

pp. 1561-1565

Author(s):

Tatsuya Fujishima ◽

Hirotaka Otake ◽

Yasushi Nanishi ◽

Hiroaki Ohta

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Floating Body ◽

Low Leakage ◽

Low Leakage Current

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Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures

Thin Solid Films ◽

10.1016/j.tsf.2016.10.019 ◽

2016 ◽

Vol 619 ◽

pp. 48-52 ◽

Cited By ~ 3

Author(s):

Chengji Jin ◽

Hongliang Lu ◽

Yimen Zhang ◽

He Guan ◽

Zheng Li ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Semiconductor Structures

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Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH3Passivated InGaAs N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bf02 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BF02 ◽

Cited By ~ 1

Author(s):

Sumarlina Azzah Bte Suleiman ◽

Sungjoo Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Transport ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transport Mechanisms ◽

Gate Leakage

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A Sequential Tunneling Model for Calculating Gate Leakage Current of Nanometer Metal-Oxide-Semiconductor Transistor

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2232 ◽

2018 ◽

Vol 13 (2) ◽

pp. 240-244

Author(s):

Yanbing Xu ◽

Hongguan Yang

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Tunneling Model

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A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors

11th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2011.5969991 ◽

2011 ◽

Author(s):

Seokil Kwon ◽

Byoungseon Choi ◽

Hyung-Suk Kuh ◽

Hyunae Park ◽

Byoungdeok Choi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Characteristics

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Comparative Study of Plasma-Charging Damage in High-$k$ Dielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.08kd05 ◽

2011 ◽

Vol 50 (8) ◽

pp. 08KD05 ◽

Cited By ~ 1

Author(s):

Masayuki Kamei ◽

Yoshinori Takao ◽

Koji Eriguchi ◽

Kouichi Ono

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Dielectric

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Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3292204 ◽

2010 ◽

Vol 96 (4) ◽

pp. 043502 ◽

Cited By ~ 9

Author(s):

Ju-Wan Lee ◽

Hyungcheol Shin ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type

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