Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors

2008 ◽  
Vol 93 (15) ◽  
pp. 153505 ◽  
Author(s):  
S. Y. Son ◽  
Y. S. Choi ◽  
P. Kumar ◽  
H. W. Park ◽  
T. Nishida ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxide ◽  
Leakage Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Induced Changes

Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures

2016 ◽  
Vol 619 ◽  
pp. 48-52 ◽  
Author(s):  
Chengji Jin ◽  
Hongliang Lu ◽  
Yimen Zhang ◽  
He Guan ◽  
Zheng Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Semiconductor Structures

Study on Nano Complementary Metal Oxide Semiconductor Gate Leakage Current

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2628-2632 ◽  
Author(s):  
Heng-Sheng Huang ◽  
Chia-Hung Huang ◽  
Yen-Ching Wu ◽  
Yao-Kai Hsu ◽  
Jeng-Kang Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Leakage Current ◽  
Gate Leakage

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

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