A High Performance Power Module with >10kV capability to Characterize and Test In Situ SiC Devices at >200°C Ambient

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000149-000158
Author(s):  
Xin Zhao ◽  
Haotao Ke ◽  
Yifan Jiang ◽  
Adam Morgan ◽  
Yang Xu ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Performance ◽  
Power Module ◽  
Module Design ◽  
Power Modules ◽  
Operational Temperature ◽  
Full Power ◽  
Temperature Applications

Abstract This paper presents design, fabrication and characterization details of a 10kV power module package for >200°C ambient temperature applications. Electrical simulations were performed to confirm the module design, and that the electric field distribution throughout the module did not exceed dielectric capabilities of components and materials. A suitable copper etching process was demonstrated for DBC layout, and a high melting point Sn/Pb/Ag solder reflow process was developed for device and component attachment. To monitor the operational temperature of the module, a thermistor was integrated onto the substrate. A new silicone gel, having a working temperature up to 210°C, was evaluated and selected for encapsulation and, of great importance, for passivation of high voltage (10kV) SiC dies. An additive manufacturing ‘Design Process’ was developed and applied to printing the housings, molds, and test fixtures. Also, cleaning processes were evaluated for every step in the fabrication process. To verify performance of the modules, mechanical dies were mounted on the substrates, and a high temperature testing setup built to characterize the modules at high temperature. Measurements indicated that the module can operate up to 12kV within 25°C to 225°C, with less than 0.1 μA leakage current. The packaging was used for full-power characterization of developmental 10kV SiC diodes, and proved that the power module packaging satisfied all requirements for high voltage and high temperature applications. This work successfully validated the processes for creating high voltage (>10 kV) and high temperature (>200°C) power modules.

A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Extreme Environment ◽  
Wide Bandgap ◽  
Power Module ◽  
Power Modules ◽  
Power Switches ◽  
Bandgap Semiconductors ◽  
Transition Times ◽  
Switch Position

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000297-000304 ◽  
Author(s):  
B. Reese ◽  
B. McPherson ◽  
R. Shaw ◽  
J. Hornberger ◽  
R. Schupbach ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Performance ◽  
Single Phase ◽  
University Of Arkansas ◽  
Power Module ◽  
Power Modules ◽  
Gate Driver ◽  
Switch Position ◽  
The University

Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.

Module and System Considerations to Maximize Performance Advantages of SiC Power Devices

2018 ◽  
Vol 924 ◽  
pp. 883-886
Author(s):  
Ty McNutt ◽  
Kraig Olejniczak ◽  
Stephen Minden ◽  
Daniel Martin ◽  
Jonathan Hayes ◽  
...  
Keyword(s):  
High Frequency ◽  
System Performance ◽  
High Speed ◽  
Power Devices ◽  
Power Module ◽  
Module Design ◽  
Power Modules ◽  
Bus Structure ◽  
Full Power ◽  
Current Carrying Capability

This paper extends a previously presented SiC power module design philosophy to critical, higher-level components for increased system performance, namely the DC bussing and DC link capacitor design. The DC bussing is essential to connect the DC bulk capacitors to the high-speed power modules and it is imperative that low inductance is maintained while current carrying capability and temperature be maintained. Often, high frequency capacitors are added to systems to increase performance by compensating for extra stray inductance that the DC bussing can introduce. However, issues that may arise by doing such are presented and it is shown that the best solution is to optimize the DC bus structure rather than compensate for a poor design. Finally, the implemented bussing is shown and full power system results presented for the inverter stack-up design.

Space High Voltage Power Module Design

2020 ◽  
Author(s):  
Zhao Wen-jie ◽  
Wan Cheng-an ◽  
Gao Yi-fei ◽  
Zhang Guo-shuai ◽  
Zheng Yan ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Module ◽  
Module Design

scholarly journals Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules

2019 ◽  
Author(s):  
Erick Gutierrez ◽  
Kevin Lin ◽  
Douglas DeVoto ◽  
Patrick McCluskey
Keyword(s):  
Thermal Cycling ◽  
Failure Modes ◽  
Rapid Determination ◽  
Degradation Process ◽  
In Situ Monitoring ◽  
Power Module ◽  
Insulated Gate Bipolar Transistor ◽  
Die Attach ◽  
Power Modules

Abstract Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for high-power applications. Operation and environmental stresses can cause these power modules to progressively degrade over time, potentially leading to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization were performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment aimed to assess the potential damage effects of thermal cycling on the die attach, results indicated that wire bond degradation was the life-limiting failure mechanism.

Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000289-000296 ◽  
Author(s):  
James D. Scofield ◽  
J. Neil Merrett ◽  
James Richmond ◽  
Anant Agarwal ◽  
Scott Leslie
Keyword(s):  
Selection Process ◽  
Free Module ◽  
Junction Temperature ◽  
Thermal Impedance ◽  
Power Module ◽  
Package Design ◽  
Module Design ◽  
Reliability Characteristics ◽  
Power Modules ◽  
Environmental Requirement

A custom multi-chip power module packaging was designed to exploit the electrical and thermal performance potential of silicon carbide MOSFETs and JBS diodes. The dual thermo-mechanical package design was based on an aggressive 200°C ambient environmental requirement and 1200 V blocking and 100 A conduction ratings. A novel baseplate-free module design minimizes thermal impedance and the associated device junction temperature rise. In addition, the design incorporates a free-floating substrate configuration to minimize thermal expansion coefficient induced stresses between the substrate and case. Details of the module design and materials selection process will be discussed in addition to highlighting deficiencies in current packaging materials technologies when attempting to achieve high thermal cycle life reliability over an extended temperature range.

A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode

2015 ◽  
Vol 2015 (1) ◽  
pp. 000359-000364 ◽  
Author(s):  
Adam Morgan ◽  
Ankan De ◽  
Haotao Ke ◽  
Xin Zhao ◽  
Kasunaidu Vechalapu ◽  
...  
Keyword(s):  
High Voltage ◽  
Thermal Stresses ◽  
Wide Bandgap ◽  
Power Module ◽  
Cost Performance ◽  
Power Semiconductor ◽  
Current Switch ◽  
Power Modules ◽  
Voltage Stress ◽  
3D Printed

The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

Characterization of Silicone Gel for High Temperature Encapsulation in High Voltage WBG Power Modules

2017 ◽  
Vol 2017 (1) ◽  
pp. 000312-000317
Author(s):  
Adam Morgan ◽  
Xin Zhao ◽  
Jason Rouse ◽  
Douglas Hopkins
Keyword(s):  
High Temperature ◽  
Thermal Aging ◽  
Dielectric Strength ◽  
Material Structure ◽  
Power Module ◽  
Leakage Currents ◽  
Test Vehicle ◽  
Silicone Gel ◽  
Power Modules ◽  
Silicone Gels

Abstract One of the most important advantages of wide-bandgap (WBG) devices is high operating temperature (>200°C). Power modules have been recognized as an enabling technology for many industries, such as automotive, deep-well drilling, and on-engine aircraft controls. These applications are all required to operate under some form of extreme environmental conditions. Silicone gels are the most popular solution for the encapsulation of power modules due to mechanical stress relief enabled by a low Young's modulus, electrical isolation achieved due to high dielectric strength, and a dense material structure that protects encapsulated devices against moisture, chemicals, contaminants, etc. Currently, investigations are focused on development of silicone gels with long-term high-temperature operational capability. The target is to elevate the temperature beyond 200°C to bolster adoption of power modules in the aforementioned applications. WACKER has developed silicone gels with ultra-high purity levels of < 2ppm of total residual ions combined with > 200°C thermal stability. In this work, leakage currents through a group of WACKER Chemie encapsulant silicone gels (A, B, C) are measured and compared for an array of test modules after exposure to a 12kV voltage sweep at room temperature up to 275°C, and thermal aging at 150°C for up to more than 700 hours. High temperature encapsulants capable of producing leakage currents less than 1μA, are deemed acceptable at the given applied blocking voltage and thermal aging soak temperature. To fully characterize the high temperature encapsulants, silicone gel A, B, and C, an entire high temperature module is used as a common test vehicle. The power module test vehicle includes: 12mil/40mil/12mil Direct Bonded Copper (DBC) substrates, gel under test (GUT), power and Kelvin connected measurement terminals, thermistor thermal sensor to sense real-time temperature, and 12mil Al bonding wires to manage localized high E-Fields around wires. It was ultimately observed that silicone gels B and C were capable of maintaining low leakage current capabilities under 12kV and 275°C conditions, and thus present themselves as strong candidates for high-temperature WBG device power modules and packaging.

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