2.5D and 3D Integration Technology Update

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 1-35
Author(s):  
Robert Patti
Keyword(s):  
New Work ◽  
Customer Requirements ◽  
3D Integration ◽  
3D Technology ◽  
Integration Technology

This publication will cover Tezzaron's latest advancements in 2.5D and 3D technology including new wafer to wafer integration of InP and GaAs with CMOS devices and new work in bonded die to wafer assembly with sub 25um pitch. A manufacturing perspective of the evolving customer requirements and the unique challenges in testing these highly complex devices will be discussed.

The European 3D Technology Platform (e-CUBES)

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000446-000501 ◽  
Author(s):  
Peter Ramm ◽  
Armin Klumpp ◽  
Josef Weber ◽  
Thomas Fritzsch ◽  
Maaike Taklo ◽  
...  
Keyword(s):  
System Integration ◽  
High Performance ◽  
Technological Development ◽  
Low Cost ◽  
Market Potential ◽  
3D Integration ◽  
3D Technology ◽  
Critical Dimensions ◽  
Technology Platform ◽  
Integration Technology

The European 3D technology platform that has been established represents the ensemble of 3D integration technologies which were developed within the e-CUBES project [http://www.ecubes.org]. It became evident that the fabrication of e-CUBES with their need for high-level miniaturization can only be realized by system integration technologies which use the third dimension. The main objective is to provide 3D integration technologies which on the one hand increase the performance sufficiently and at the same time allow for low cost fabrication in order to achieve products with a large market potential. The work was focussed on the requirements coming from application demonstrators. However, other requirements set by taking the visionary approach of developing strongly miniaturized micro/nano-systems were also a major task of the work. Research and technological development was necessary in the following fields in order to achieve the objectives. Seven corresponding technologies were successfully developed building a European platform on 3D Integration. This is considered to be essential output of the e-CUBES project. These are in the 3D integration categoriesVertical System Integration (3D-SOC): Fraunhofer IZM-M's Through-Si Via (TSV) Technology (ICV-SLID) and SINTEF's Hollow Via & Gold Stud Bump Bonding (HoViGo),Chip Stacking (3D-WLP): IMEC / Fraunhofer IZM's Thin-Chip-Integration Technology (TCI/UTCS) and CEA-LETI's Via Belt Technology, and3D Assembly (3D-SIP): 3D-PLUS' High Performance Package-in-Package (HiPPiP) and Wireless Die-on-Die (WDoD) Technologies, as well as Tyndall's Submicron Wire Anisotropic Conductive Film Technology (SW-ACF). Four optimized 3D integration technologies were successfully used in the development of three e-CUBES application demonstrators: Thin-Chip-Integration technology (TCI/UTCS) for Philips' Health & Fitness demonstrator, TSV technology ICV-SLID and HoViGo for Infineon's Automotive demonstrator (TPMS) and Package-in-Package technology HiPPiP for Thales' Aeronautic demonstrator. The 3D integration technologies which form part of the established e-CUBES platform will be presented including key characteristics, critical dimensions, electrical parameters and adaptability to new applications.

3D Technology Applications Market Trends & Key Challenges

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 000363-000400
Author(s):  
Thibault Buisson ◽  
Amandine Pizzagalli ◽  
Eric Mounier ◽  
Rozalia Beica
Keyword(s):  
Supply Chain ◽  
Business Models ◽  
Semiconductor Industry ◽  
High Volume ◽  
Advanced Technology ◽  
Passive Component ◽  
Process Technology ◽  
3D Integration ◽  
3D Technology ◽  
Major Player

Semiconductor industry, for more than four decades, has rigorously followed Moore's Law in scaling down the CMOS technologies. Although several new materials and processes are being developed to address the challenges of future technology nodes, in the coming years they will be limited with respect to functionalities that future devices will require. As a consequence a clear trend of moving from CMOS to package and system architecture can be observed. Three-dimensional (3D) technology using the well-known Through Silicon Via (TSV) interconnect is one the emerging option, considered today the most advanced technology, that could enable various heterogeneous integration. Indeed such technology is not limited to the CMOS scaling in itself, it is rather based on bringing more functionalities by stacking different type of devices (Logic, Memory, Analog, MEMS, Passive component...) while reducing the form factor of the packaging. This functional diversification is also known as More-than-Moore. In addition, considering Known Good Die approach, each component of the 3D package could have a different manufacturer using different wafer sizes and node technology, thus bringing more complexity but also more opportunities and responsibilities to the supply chain. There are several business models identified, either using vertical integration or collaborative approach, if a dominant one will emerge or several tactics will co-exist, it is still remains a key question that need to be answered. The supply chain interaction and key players will be addressed in this presentation, including current and future standardization needs. This is today a key for the manufacturing of advanced 3D devices. 3D integration is considered today a new paradigm for the semiconductor industry, since it will drive evolution for packages for the coming decades. Due to several advantages that TSV technology can bring, several platforms have started. 3D WLCSP, 2.5D interposers & 3DIC are the main platforms that will be studied in this paper. Market forecasts in terms of wafer starts, market revenue, segments and end-products as well as supply chain activities and major player interactions will be presented. The industry has enthusiastically been waiting for mass production of 3D ICs. Although some small level of production has already been reported, the adoption rate in high volume manufacturing (HVM) is still low due to unresolved challenges that the industry still needs to address. Process technology is not fully mature, there are still many challenges in bonding and de-bonding, testing as well as thermal management that have to be overcome. Furthermore, design tools have to be fully released to enable proper 3D integration design. Looking at the time to market it is foreseen that device such as the Hybrid Memory Cube, combining high-speed logic with a multiple stacks of TSV bonded memories, will come into high volume production in 2014. This will definitely change the world of the memory market and will significantly speed up the adoption of 3D technologies. Technology roadmaps for 3D integration will also be included in the manuscript and reviewed during the presentation.

Using 3D integration technology to realize multi-context FPGAs

2009 ◽  
Author(s):  
Alesandro Cevrero ◽  
Panagiotis Athanasopoulos ◽  
Hadi Parandeh-Afshar ◽  
Maurizio Skerlj ◽  
Philip Brisk ◽  
...  
Keyword(s):  
3D Integration ◽  
Integration Technology

scholarly journals Recent progress in 3D integration technology

2015 ◽  
Vol 12 (7) ◽  
pp. 20152001-20152001 ◽  
Author(s):  
Mitsumasa Koyanagi
Keyword(s):  
Recent Progress ◽  
3D Integration ◽  
Integration Technology

scholarly journals Wafer-Level 3D Integration Based on Poly (Diallyl Phthalate) Adhesive Bonding

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1586
Author(s):  
Zhong Fang ◽  
Peng You ◽  
Yijie Jia ◽  
Xuchao Pan ◽  
Yunlei Shi ◽  
...  
Keyword(s):  
Adhesive Bonding ◽  
Low Cost ◽  
Three Dimensional ◽  
System Level ◽  
Process Conditions ◽  
Wafer Level ◽  
3D Integration ◽  
Bonding Pressure ◽  
Curing Conditions ◽  
Integration Technology

Three-dimensional integration technology provides a promising total solution that can be used to achieve system-level integration with high function density and low cost. In this study, a wafer-level 3D integration technology using PDAP as an intermediate bonding polymer was applied effectively for integration with an SOI wafer and dummy a CMOS wafer. The influences of the procedure parameters on the adhesive bonding effects were determined by Si–Glass adhesive bonding tests. It was found that the bonding pressure, pre-curing conditions, spin coating conditions, and cleanliness have a significant influence on the bonding results. The optimal procedure parameters for PDAP adhesive bonding were obtained through analysis and comparison. The 3D integration tests were conducted according to these optimal parameters. In the tests, process optimization was focused on Si handle-layer etching, PDAP layer etching, and Au pillar electroplating. After that, the optimal process conditions for the 3D integration process were achieved. The 3D integration applications of the micro-bolometer array and the micro-bridge resistor array were presented. It was confirmed that 3D integration based on PDAP adhesive bonding is suitable for the fabrication of system-on-chip when using MEMS and IC integration and that it is especially useful for the fabrication of low-cost suspended-microstructure on-CMOS-chip systems.

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