Improved Electrical Properties due to Pressurized High Temperature Annealing of ITO and Application to Gas Sensors

Ji eun Koo; Young ji Cho; Ji ho Chang; Seung hwan Park; Woong Lee; Hyo jong Lee; Sang tae Lee

doi:10.3938/npsm.61.1069

Improved Electrical Properties due to Pressurized High Temperature Annealing of ITO and Application to Gas Sensors

New Physics Sae Mulli ◽

10.3938/npsm.61.1069 ◽

2011 ◽

Vol 61 (11) ◽

pp. 1069

Author(s):

Ji eun Koo ◽

Young ji Cho ◽

Ji ho Chang ◽

Seung hwan Park ◽

Woong Lee ◽

...

Keyword(s):

High Temperature ◽

Electrical Properties ◽

Gas Sensors ◽

High Temperature Annealing

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Effect of Doping and High-Temperature Annealing on the Structural and Electrical Properties of Zn1–X NiXO(0≤X≤0.15) Powders

Journal of Material Science and Technology ◽

10.1016/s1005-0302(11)60168-0 ◽

2011 ◽

Vol 27 (10) ◽

pp. 944-950 ◽

Cited By ~ 9

Author(s):

Hakan Çolak ◽

Orhan Türkoğlu

Keyword(s):

High Temperature ◽

Electrical Properties ◽

High Temperature Annealing ◽

Structural And Electrical Properties ◽

Effect Of Doping

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Effect of High Temperature Annealing on Crystal Structure and Electrical Properties of Multicrystalline Silicon by the Metallurgical Method

Silicon ◽

10.1007/s12633-019-00296-1 ◽

2019 ◽

Vol 12 (9) ◽

pp. 2099-2106 ◽

Cited By ~ 1

Author(s):

Hongyuan Shen ◽

Xiaocong Deng ◽

Kuixian Wei ◽

Wenhui Ma ◽

Longzhong Gao

Keyword(s):

Crystal Structure ◽

High Temperature ◽

Electrical Properties ◽

Multicrystalline Silicon ◽

High Temperature Annealing

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The effect of high-temperature annealing on the structure and electrical properties of well-aligned carbon nanotubes

Materials Research Bulletin ◽

10.1016/j.materresbull.2006.06.023 ◽

2007 ◽

Vol 42 (3) ◽

pp. 474-481 ◽

Cited By ~ 59

Author(s):

Qian-Ming Gong ◽

Zhi Li ◽

Ye Wang ◽

Bin Wu ◽

Zhengyi Zhang ◽

...

Keyword(s):

Carbon Nanotubes ◽

High Temperature ◽

Electrical Properties ◽

High Temperature Annealing ◽

Aligned Carbon Nanotubes

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Changes of electrical properties of implanted buried oxide in silicon by high‐temperature annealing

Journal of Applied Physics ◽

10.1063/1.338216 ◽

1987 ◽

Vol 61 (2) ◽

pp. 639-642 ◽

Cited By ~ 9

Author(s):

A. Mogro‐Campero

Keyword(s):

High Temperature ◽

Electrical Properties ◽

High Temperature Annealing ◽

Buried Oxide

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Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2

Semiconductor Physics Quantum Electronics & Optoelectronics ◽

10.15407/spqeo13.01.012 ◽

2009 ◽

Vol 13 (1) ◽

pp. 012-018 ◽

Cited By ~ 1

Author(s):

S.V. Bunak ◽

Keyword(s):

High Temperature ◽

Electrical Properties ◽

High Temperature Annealing ◽

Semiconductor Structures

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Al-doped SnO2 thin films: Impacts of high temperature annealing on the structural, optical and electrical properties

Journal of Materials Research and Technology ◽

10.1016/j.jmrt.2021.09.145 ◽

2021 ◽

Author(s):

Abu Sayeed ◽

Hasan Khaled Rouf

Keyword(s):

Thin Films ◽

High Temperature ◽

Electrical Properties ◽

Optical And Electrical Properties ◽

High Temperature Annealing ◽

Sno2 Thin Films

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Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing

Silicon Carbide and Related Materials 2005 - Materials Science Forum ◽

10.4028/0-87849-425-1.835 ◽

2006 ◽

pp. 835-838

Author(s):

Akimasa Kinoshita ◽

Makoto Katou ◽

Miwa Kawasaki ◽

Kazutoshi Kojima ◽

Kenji Fukuda ◽

...

Keyword(s):

Surface Roughness ◽

High Temperature ◽

Electrical Properties ◽

Surface Orientation ◽

High Temperature Annealing ◽

P Type ◽

Effect Of Surface

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Effect of low and high temperature annealing on the electrical properties of pure N2O/SiH4 PECVD SiO2 deposited at a high rate

International Journal of Electronics ◽

10.1080/002072196137156 ◽

1996 ◽

Vol 80 (4) ◽

pp. 525-532

Author(s):

R. K. CHANANA ◽

H. N. UPADHYAY ◽

R. DWIVEDI ◽

S. K. SRIVASTAVA

Keyword(s):

High Temperature ◽

Electrical Properties ◽

High Rate ◽

High Temperature Annealing

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Electrical properties of a B doped layer in diamond formed by hot B implantation and high-temperature annealing

Diamond and Related Materials ◽

10.1016/j.diamond.2008.09.013 ◽

2009 ◽

Vol 18 (2-3) ◽

pp. 128-131 ◽

Cited By ~ 11

Author(s):

Nobuteru Tsubouchi ◽

M. Ogura ◽

N. Mizuochi ◽

H. Watanabe

Keyword(s):

High Temperature ◽

Electrical Properties ◽

High Temperature Annealing

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Growth of Al-doped p-type BaSi2 films by molecular beam epitaxy and the effect of high-temperature annealing on their electrical properties

Physics Procedia ◽

10.1016/j.phpro.2011.01.030 ◽

2011 ◽

Vol 11 ◽

pp. 27-30 ◽

Cited By ~ 26

Author(s):

M. Takeishi ◽

Y. Matsumoto ◽

R. Sasaki ◽

T. Saito ◽

T. Suemasu

Keyword(s):

High Temperature ◽

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

High Temperature Annealing ◽

P Type

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