Changes of electrical properties of implanted buried oxide in silicon by high‐temperature annealing

1987 ◽  
Vol 61 (2) ◽  
pp. 639-642 ◽  
Author(s):  
A. Mogro‐Campero
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
High Temperature Annealing ◽  
Buried Oxide

Improved Electrical Properties due to Pressurized High Temperature Annealing of ITO and Application to Gas Sensors

2011 ◽  
Vol 61 (11) ◽  
pp. 1069
Author(s):  
Ji eun Koo ◽  
Young ji Cho ◽  
Ji ho Chang ◽  
Seung hwan Park ◽  
Woong Lee ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Gas Sensors ◽  
High Temperature Annealing

High-Quality SOI by Oxygen Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
A. H. van Ommen ◽  
H. J. Ligthart ◽  
J. Politiek ◽  
M. P. A. Viegers
Keyword(s):  
High Temperature ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Quality ◽  
Cubic Symmetry ◽  
Buried Oxide ◽  
Simple Cubic ◽  
Precipitate Growth

ABSTRACTHigh quality Silicon-On-Insulator, with a dislocation density lower than 105cm−2, has been formed by high temperature annealing of high-dose oxygen implanted silicon. In the as-implanted state, oxygen was found to form precipitates in the top silicon film. In the upper region these precipitates were found to order into a superlattice of simple cubic symmetry. Near the interface with the buried oxide film the precipitates are larger and no ordering occurs in that region. Contrary to implants without precipitate ordering where dislocations are observed across the entire layer thickness of the top silicon film, dislocations are now only found near the buried oxide. The precipitate ordering appears to prevent the dislocations to climb to the surface. High temperature annealing results in precipitate growth in this region whereas they dissolve elsewhere. These growing precipitates pin the dislocations and elimination of precipitates and dislocations occurs simultaneously, resulting in good quality SOI material.

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