scholarly journals Growth of Al-doped p-type BaSi2 films by molecular beam epitaxy and the effect of high-temperature annealing on their electrical properties

2011 ◽  
Vol 11 ◽  
pp. 27-30 ◽  
Author(s):  
M. Takeishi ◽  
Y. Matsumoto ◽  
R. Sasaki ◽  
T. Saito ◽  
T. Suemasu
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Temperature Annealing ◽  
P Type

The effect of low-temperature annealing on the electrical properties of the p-type cadmium–mercury–tellurium heterostructures grown by molecular beam epitaxy

2013 ◽  
Vol 56 (3) ◽  
pp. 313-318
Author(s):  
D. Yu. Protasov ◽  
А. R. Novoselov ◽  
D. V. Kombarov ◽  
V. Ya. Kostyuchenko ◽  
А. Е. Dolbak ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Annealing ◽  
P Type

Properties of Modulation-Doped HgCdTe Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Hwang ◽  
Z. Yang ◽  
Y. Lansari ◽  
J.W. Han ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Optical And Electrical Properties ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
P Type ◽  
Growth Experiments

ABSTRACTPhotoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.

Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

1999 ◽  
Vol 201-202 ◽  
pp. 524-529 ◽  
Author(s):  
L He ◽  
S.L Wang ◽  
J.R Yang ◽  
M.F Yu ◽  
Y Wu ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Temperature Annealing
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