Thermally stable AuBe-based ohmic contacts to p-type GaP for AlGaInP-based light-emitting diode by using a tungsten barrier layer

2016 ◽  
Vol 68 (2) ◽  
pp. 306-310 ◽  
Author(s):  
Dae-Hyun Kim ◽  
Daesung Kang ◽  
Jae-Seong Park ◽  
Tae-Yeon Seong
Keyword(s):  
Barrier Layer ◽  
Ohmic Contacts ◽  
Light Emitting Diode ◽  
Thermally Stable ◽  
Light Emitting ◽  
P Type

Thermally Stable and Reflective RhZn/Ag Ohmic Contacts to p-type GaN for Near-UV Flip-chip Light-emitting Diodes

2011 ◽  
Vol 59 (1) ◽  
pp. 156-160 ◽  
Author(s):  
Seong-Han Park ◽  
Joon-Woo Jeon ◽  
Tae-Yeon Seong ◽  
Jeong-Tak Oh
Keyword(s):  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Thermally Stable ◽  
Light Emitting ◽  
P Type

Polymer light-emitting diode with resistivity optimized p-type Si anode

2017 ◽  
pp. 1327-1330
Author(s):  
Qiaoli Niu ◽  
Hengsheng Wu ◽  
Yongtao Gu ◽  
Yanzhao Li ◽  
Wenjin Zeng ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Si Anode ◽  
Polymer Light Emitting Diode ◽  
P Type

A Monolithic White-Light LED Based on GaN Doped with Be

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
White Light ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Yellow Emission ◽  
Bulk Crystals ◽  
Light Emitting ◽  
Type Conductivity ◽  
P Type ◽  
Colour Rendering

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.

Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

2004 ◽  
Vol 4 (1) ◽  
pp. 42-46 ◽  
Author(s):  
Atsushi Tsukazaki ◽  
Akira Ohtomo ◽  
Takeyoshi Onuma ◽  
Makoto Ohtani ◽  
Takayuki Makino ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Temperature Modulation ◽  
Light Emitting ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document