Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode

2014 ◽  
Vol 14 (9) ◽  
pp. 1176-1180 ◽  
Author(s):  
Dae-Hyun Kim ◽  
Jaecheon Han ◽  
Tae-Yeon Seong
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
P Type

scholarly journals Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

2021 ◽  
Author(s):  
Bo-Rui Huang ◽  
Kui-Shou You ◽  
Kai-Chao Yang ◽  
Day-Shan Liu
Keyword(s):  
Light Emitting Diode ◽  
Band Edge ◽  
Near Band Edge ◽  
Zno Film ◽  
Native Defects ◽  
Light Emitting ◽  
Uv Emission ◽  
Near Ultraviolet ◽  
Double Heterojunction ◽  
P Type

Abstract In this work, an AlN-ZnO/ZnO/AlN-ZnO double heterojunction (DH) structure prepared using the cosputtering technology was deposited onto the p-type GaN epitaxial layer. The indiffusion of the oxygen atoms to the p-GaN epilayer was obstructed as the cosputtered AlN-ZnO film inset between n-ZnO/p-GaN interface. The near-ultraviolet (UV) emission from this ZnO/GaN-based light emitting diode (LED) was greatly improved as compared to an n-type ZnO film directly deposited onto the p-GaN epilayer. Meanwhile, the native defects in the n-ZnO layer associated with the green luminescence was less likely to form while it was sandwiched by the cosputtered AlN-ZnO film. As the thickness of the active n-ZnO layer in the DH structure reached 10 nm, the near-band-edge (NBE) emission became the predominated luminescence over the resulting LED spectrum.

scholarly journals AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode

2008 ◽  
Vol 45 (4) ◽  
pp. 25-32 ◽  
Author(s):  
L. Dimitrocenko ◽  
J. Grube ◽  
P. Kulis ◽  
G. Marcins ◽  
B. Polyakov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Electron Tunneling ◽  
Light Emitting Diode ◽  
Vapour Phase ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Near Ultraviolet ◽  
Metal Organic ◽  
Organic Vapour

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting DiodeA 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, ann-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier.

Polymer light-emitting diode with resistivity optimized p-type Si anode

2017 ◽  
pp. 1327-1330
Author(s):  
Qiaoli Niu ◽  
Hengsheng Wu ◽  
Yongtao Gu ◽  
Yanzhao Li ◽  
Wenjin Zeng ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Si Anode ◽  
Polymer Light Emitting Diode ◽  
P Type

A Monolithic White-Light LED Based on GaN Doped with Be

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
White Light ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Yellow Emission ◽  
Bulk Crystals ◽  
Light Emitting ◽  
Type Conductivity ◽  
P Type ◽  
Colour Rendering

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.

Synthesis and luminescence properties of the red phosphor CaZrO3:Eu3+ for white light-emitting diode application

Open Physics ◽  
2011 ◽  
Vol 9 (4) ◽  
Author(s):  
Junli Huang ◽  
Liya Zhou ◽  
Yuwei Lan ◽  
Fuzhong Gong ◽  
Qunliang Li ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diode ◽  
Red Light ◽  
Average Diameter ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Light Region

AbstractEu3+-doped CaZrO3 phosphor with perovskite-type structure was synthesized by the high temperature solid-state method. The samples were characterized by X-ray diffraction, scanning electron microscopy, fluorescence spectrophotometer and UV-vis spectrophotometer, respectively. XRD analysis showed that the formation of CaZrO3 was at the calcinations temperature of 1400°C. The average diameter of CaZrO3 with 4 mol% doped-Eu3+ was 2µm. The PL spectra demonstrated that CaZrO3:Eu3+ phosphor could be excited effectively in the near ultraviolet light region (397 nm) and emitted strong red-emission lines at 616 nm corresponding to the forced electric dipole 5 D 0 → 7 F 2 transitions of Eu3+. Meanwhile, the light-emitting diode was fabricated with the Ca0.96ZrO3:Eu0.043+ phosphor, which can efficiently absorb ∼ 400 nm irradiation and emit red light. Therefore Ca0.96ZrO3:Eu0.043+ may have applications for a near ultraviolet InGaN chip-based white light-emitting diode.

Near-ultraviolet chip-based phosphor-converted solar-spectrum white light-emitting diode

2020 ◽  
Vol 59 (01) ◽  
pp. 1
Author(s):  
Xinran Zhang ◽  
Shuo Zhang ◽  
Guodong Wang ◽  
Yunyu Wang ◽  
Meng Liang ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diode ◽  
Solar Spectrum ◽  
Light Emitting ◽  
Near Ultraviolet

Eu and Dy doped borophosphosilicate glass-ceramics for near ultraviolet based light-emitting diode applications

Vacuum ◽  
2019 ◽  
Vol 169 ◽  
pp. 108877 ◽  
Author(s):  
Luyue Niu ◽  
Chaofeng Zhu ◽  
Meimei Zhang ◽  
Zhigang He ◽  
Jianan Liu ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Glass Ceramics ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Borophosphosilicate Glass
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