The reflectivity of Mo/Ag/Au ohmic contacts on p-type GaN for flip-chip light-emitting diode (FCLED) applications

2008 ◽  
Vol 254 (15) ◽  
pp. 4479-4482 ◽  
Author(s):  
Ming-Jer Jeng ◽  
Ching-Chuan Shiue ◽  
Liann-Be Chang
Keyword(s):  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
P Type

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Thermally Stable and Reflective RhZn/Ag Ohmic Contacts to p-type GaN for Near-UV Flip-chip Light-emitting Diodes

2011 ◽  
Vol 59 (1) ◽  
pp. 156-160 ◽  
Author(s):  
Seong-Han Park ◽  
Joon-Woo Jeon ◽  
Tae-Yeon Seong ◽  
Jeong-Tak Oh
Keyword(s):  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Thermally Stable ◽  
Light Emitting ◽  
P Type

High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contacts for flip-chip light-emitting diode (FCLED) applications

2009 ◽  
Vol 255 (12) ◽  
pp. 6155-6158 ◽  
Author(s):  
Liann-Be Chang ◽  
Ching-Chuan Shiue ◽  
Ming-Jer Jeng
Keyword(s):  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Light Emitting

scholarly journals Высоковольтные светодиодные кристаллы AlInGaN

2019 ◽  
Vol 53 (11) ◽  
pp. 1562
Author(s):  
Л.К. Марков ◽  
М.В. Кукушкин ◽  
А.С. Павлюченко ◽  
И.П. Смирнова ◽  
Г.В. Иткинсон ◽  
...  
Keyword(s):  
Flip Chip ◽  
Light Emitting Diode ◽  
Contact Region ◽  
Forward Voltage ◽  
Insulating Layer ◽  
Light Emitting ◽  
Type Contact ◽  
In Series ◽  
Distribution Uniformity ◽  
P Type

AbstractA high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25 × 1.25 mm is intended for a working current of 20 mA and a forward voltage of 48 V. To improve the current-distribution uniformity over the active region of the chip elements and to minimize the losses of the element area occupied by the n -type contact, the n -type contact pads in them are arranged inside the p -type contact region due to the two-level metallization layout with an intermediate insulating layer of dielectric. The arrangement topology of the contact pads is developed using numerical simulation. An increase in the quantum efficiency of the chip is provided by the application of combinations of metals with a high reflectance at the LED emission wavelength, which are used when fabricating n - and p -type contacts as well as current-carrying strips.

Polymer light-emitting diode with resistivity optimized p-type Si anode

2017 ◽  
pp. 1327-1330
Author(s):  
Qiaoli Niu ◽  
Hengsheng Wu ◽  
Yongtao Gu ◽  
Yanzhao Li ◽  
Wenjin Zeng ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Si Anode ◽  
Polymer Light Emitting Diode ◽  
P Type

A Monolithic White-Light LED Based on GaN Doped with Be

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
White Light ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Yellow Emission ◽  
Bulk Crystals ◽  
Light Emitting ◽  
Type Conductivity ◽  
P Type ◽  
Colour Rendering

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.

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