Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

2004 ◽  
Vol 4 (1) ◽  
pp. 42-46 ◽  
Author(s):  
Atsushi Tsukazaki ◽  
Akira Ohtomo ◽  
Takeyoshi Onuma ◽  
Makoto Ohtani ◽  
Takayuki Makino ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Temperature Modulation ◽  
Light Emitting ◽  
P Type

Polymer light-emitting diode with resistivity optimized p-type Si anode

2017 ◽  
pp. 1327-1330
Author(s):  
Qiaoli Niu ◽  
Hengsheng Wu ◽  
Yongtao Gu ◽  
Yanzhao Li ◽  
Wenjin Zeng ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Si Anode ◽  
Polymer Light Emitting Diode ◽  
P Type

A Monolithic White-Light LED Based on GaN Doped with Be

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
White Light ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Yellow Emission ◽  
Bulk Crystals ◽  
Light Emitting ◽  
Type Conductivity ◽  
P Type ◽  
Colour Rendering

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.

MBE-Grown CdZnO/ZnO Multiple Quantum-Well Light-Emitting Diode on MOCVD-Grown p-Type GaN

2012 ◽  
Vol 24 (11) ◽  
pp. 909-911 ◽  
Author(s):  
Shao-Ying Ting ◽  
Horng-Shyang Chen ◽  
Wen-Ming Chang ◽  
Jeng-Jie Huang ◽  
Che-Hao Liao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
P Type

Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

2013 ◽  
Vol 686 ◽  
pp. 49-55
Author(s):  
M. Ain Zubaidah ◽  
N.A. Asli ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Visible Range ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

A Full p-Type Poly-Si TFT Shift Register for Active Matrix Displays

2010 ◽  
Vol 1245 ◽  
Author(s):  
Myoung-Hoon Jung ◽  
Hoon-Ju Chung ◽  
Young-Ju Park ◽  
Ohyun Kim
Keyword(s):  
Control Method ◽  
Light Emitting Diode ◽  
Shift Register ◽  
Active Matrix ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Active Matrix Displays ◽  
Output Load ◽  
Voltage Swing ◽  
P Type

AbstractA new shift register using p-type poly-Si thin-film transistors (TFTs) for active matrix display is proposed. It utilizes only p-type TFTs to simplify the fabrication process, and provides time-shifted output signals with a voltage swing from VSS to VDD without signal-level loss. In the proposed shift register, output is structurally separated from carry and therefore has a high immunity to output signal distortion caused by output load capacitance. We also propose a new light emitting control method using this shift register for high image quality active-matrix organic light emitting diode (AMOLED) displays. The proposed shift register was verified by simulation and measurement.

Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film homojunction light-emitting diode

2014 ◽  
Vol 25 (4) ◽  
pp. 1955-1958 ◽  
Author(s):  
Hongwei Liang ◽  
Qiuju Feng ◽  
Xiaochuan Xia ◽  
Rong Li ◽  
Huiying Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Zno Nanowires ◽  
Zno Thin Film ◽  
Light Emitting ◽  
P Type
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