Effects of annealing on domain-wall contributions to the dielectric properties of PZT thin films

2013 ◽  
Vol 63 (10) ◽  
pp. 2002-2007 ◽  
Author(s):  
Sam Yeon Cho ◽  
Jin Ho Kwak ◽  
Sun A. Yang ◽  
Sang Don Bu ◽  
Sungkyun Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Pzt Thin Films

Crystal Structure and Texture Effects on Piezoelectric and Dielectric Properties of PZT Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
D. Damjanovic ◽  
D. V. Taylor ◽  
N. Setter
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Piezoelectric Coefficient ◽  
Nonlinear Behavior ◽  
Systematic Investigation ◽  
Wall Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Domain Wall Structure

AbstractA systematic investigation of the piezoelectric and dielectric properties of Pb(Zr1-xTix,)O3 (PZT) thin films fabricated by chemical solution deposition was carried out for rhombohedral (x= 0.40), tetragonal (x=0.55) and morphotropic (x=0.47) composition. Each composition was grown with three different crystallographic orientations (textures): “random”, (111) and (100). Nonlinearity (field dependence) of d33 piezoelectric coefficient and dielectric permittivity of the films was studied in detail under subswitching conditions to reveal domain-wall related contributions to the properties. After analyzing for each texture and composition the domain-wall structure, contributions due to domain-wall displacements, and effects of film clamping by the substrate a consistent interpretation of the electro-mechanical properties and nonlinear behavior was proposed. The (100) oriented rhombohedral films show the largest piezoelectric coefficient (intrinsic effect) but limited nonlinearity (domain-wall structure effect) and should therefore be considered as potential candidates for piezoelectric devices.

Application of Sol-Gel Derived Conductive Oxide LaNiO3 in Pyroelectric Detector

2011 ◽  
Vol 687 ◽  
pp. 233-237
Author(s):  
Jing Wang ◽  
Chuan Wei Zang ◽  
Liang Ying Zhang ◽  
Xi Yao
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Infrared Detector ◽  
Sol Gel ◽  
Voltage Response ◽  
Electrical Measurements ◽  
Pzt Thin Films ◽  
Force Microscopy ◽  
Layer Thin Film

Conductive LaNiO3(LNO) thin films are grown on Si(100) substrates by a sol-gel method and their application as the bottom electrode for the growth of sol-gel derived Pb(Zr,Ti)O3(PZT) thin films are studied. Morphology and electrical properties of the multilayer films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), electrical measurements. Experiment results show LNO thin films get highly (110)-oriented perovskite-type structure. Smooth and dense surfaces are observed on LNO thin films. The dielectric properties of PZT films show that PZT/LNO films exhibit worse dielectric properties than those of the PZT/Pt thin films. And LNO thin films prepared by sol-gel methods are not suitable as bottom electrode to deposit PZT thin films. On the other hand, FTIR spectrum and pyroelectric results of LNO thin films reveal that LNO can be used as absorber layer of PT thin films infrared detector with multi-layer thin film thermal insulation structure. At 10Hz, the detectivity (D*) and the voltage response (Rv) of PT thin films are 1.11×107cm·Hz1/2/W, 1.46×103V/W respectively.

scholarly journals Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx, Ti1−x)O3 thin films as a function of composition

1999 ◽  
Vol 14 (11) ◽  
pp. 4307-4318 ◽  
Author(s):  
S. Hiboux ◽  
P. Muralt ◽  
T. Maeder
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Diffraction Analysis ◽  
Piezoelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited ◽  
Dielectric And Piezoelectric Properties

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx, Ti1−x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2).X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.

Sign in / Sign up

Export Citation Format

Share Document