Crystal Structure and Texture Effects on Piezoelectric and Dielectric Properties of PZT Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
D. Damjanovic ◽  
D. V. Taylor ◽  
N. Setter
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Piezoelectric Coefficient ◽  
Nonlinear Behavior ◽  
Systematic Investigation ◽  
Wall Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Domain Wall Structure

AbstractA systematic investigation of the piezoelectric and dielectric properties of Pb(Zr1-xTix,)O3 (PZT) thin films fabricated by chemical solution deposition was carried out for rhombohedral (x= 0.40), tetragonal (x=0.55) and morphotropic (x=0.47) composition. Each composition was grown with three different crystallographic orientations (textures): “random”, (111) and (100). Nonlinearity (field dependence) of d33 piezoelectric coefficient and dielectric permittivity of the films was studied in detail under subswitching conditions to reveal domain-wall related contributions to the properties. After analyzing for each texture and composition the domain-wall structure, contributions due to domain-wall displacements, and effects of film clamping by the substrate a consistent interpretation of the electro-mechanical properties and nonlinear behavior was proposed. The (100) oriented rhombohedral films show the largest piezoelectric coefficient (intrinsic effect) but limited nonlinearity (domain-wall structure effect) and should therefore be considered as potential candidates for piezoelectric devices.

Effects of annealing on domain-wall contributions to the dielectric properties of PZT thin films

2013 ◽  
Vol 63 (10) ◽  
pp. 2002-2007 ◽  
Author(s):  
Sam Yeon Cho ◽  
Jin Ho Kwak ◽  
Sun A. Yang ◽  
Sang Don Bu ◽  
Sungkyun Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Pzt Thin Films

scholarly journals Lorentz microscopy mapping for domain wall structure study in L10 FePd thin films

2009 ◽  
Vol 110 (1) ◽  
pp. 20-25 ◽  
Author(s):  
Aurélien Masseboeuf ◽  
Christophe Gatel ◽  
Pascale Bayle-Guillemaud ◽  
Alain Marty ◽  
Jean-Christophe Toussaint
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Structure Study ◽  
Wall Structure ◽  
Lorentz Microscopy ◽  
Domain Wall Structure

scholarly journals Single-spin sensing of domain-wall structure and dynamics in a thin-film skyrmion host

2019 ◽  
Vol 3 (8) ◽  
Author(s):  
Alec Jenkins ◽  
Matthew Pelliccione ◽  
Guoqiang Yu ◽  
Xin Ma ◽  
Xiaoqin Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Domain Wall ◽  
Wall Structure ◽  
Single Spin ◽  
Structure And Dynamics ◽  
Domain Wall Structure

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Domain‐Wall Structure in Permalloy Films

1958 ◽  
Vol 29 (3) ◽  
pp. 294-295 ◽  
Author(s):  
E. E. Huber ◽  
D. O. Smith ◽  
J. B. Goodenough
Keyword(s):  
Domain Wall ◽  
Wall Structure ◽  
Domain Wall Structure

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

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