Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

2008 ◽  
Vol 53 (1) ◽  
pp. 218-222 ◽  
Author(s):  
Chang Young Koo ◽  
Dongjo Kim ◽  
Sunho Jeong ◽  
Jooho Moon ◽  
Chiyoung Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Solution Processed

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
On Chip

Towards environmentally stable solution-processed oxide thin-film transistors: a rare-metal-free oxide-based semiconductor/insulator heterostructure and chemically stable multi-stacking

2017 ◽  
Vol 5 (40) ◽  
pp. 10498-10508 ◽  
Author(s):  
Sung Woon Cho ◽  
Da Eun Kim ◽  
Kyung Su Kim ◽  
Sung Hyun Jung ◽  
Hyung Koun Cho
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Stable Solution ◽  
Rare Metal ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Practical Solution ◽  
Metal Free ◽  
Oxide Tfts

ZTO/Al2O3 heterostructure and chemically stable sol–gel multi-stacking method are proposed for practical solution-processed oxide TFTs.

Self-Aligned Solution-Processed Zinc-Tin Oxide Thin-Film Transistors with High-K Solution-Processed Gate Dielectric

2010 ◽  
Vol 1247 ◽  
Author(s):  
Chen-Guan Lee ◽  
Soumya Dutta ◽  
Ananth Dodabalapur
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Channel Length ◽  
Parasitic Capacitance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
High K ◽  
Zinc Tin Oxide

AbstractWe demonstrate high performance zinc-tin oxide (ZTO) thin-film transistors (TFTs) with low operation voltage, small channel length and low parasitic capacitance. Both the zinc tin oxide and the high-k dielectric, ZrO2, were solution processed by sol-gel methods. A self-aligned process was employed to minimize the parasitic capacitance. The transistors with a channel length of 8 μm operate at 5 V and have a saturation mobility of 2.5 cm2/V·s and an on/off ratio of 5.9×106. Gate-induced surface relief has been found to have strong effect on the performance of the active layer.

Electrically Stable, Solution-Processed Amorphous Oxide IZO Thin-Film Transistors Through a UV-Ozone Assisted Sol-Gel Approach

2014 ◽  
Vol 61 (4) ◽  
pp. 1093-1100 ◽  
Author(s):  
Thokchom Birendra Singh ◽  
Jacek Jaroslaw Jasieniak ◽  
Leonardo de Oliveira Tozi ◽  
Christopher David Easton ◽  
Mark Bown
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Stable Solution ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Izo Thin Film ◽  
Uv Ozone

Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors

2018 ◽  
Vol 44 (8) ◽  
pp. 9125-9131 ◽  
Author(s):  
Wenwen Xia ◽  
Guodong Xia ◽  
Guangsheng Tu ◽  
Xin Dong ◽  
Sumei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Sol Gel ◽  
Dielectric Films ◽  
Solution Processed ◽  
High K

scholarly journals Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

2014 ◽  
Vol 115 (21) ◽  
pp. 214501 ◽  
Author(s):  
Mohammed Benwadih ◽  
J. A. Chroboczek ◽  
Gérard Ghibaudo ◽  
Romain Coppard ◽  
Dominique Vuillaume
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Trap Density ◽  
Solution Processed
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