Effects of Sol-Gel Organic-Inorganic Hybrid Passivation on Stability of Solution-Processed Zinc Tin Oxide Thin Film Transistors

2011 ◽  
Vol 14 (9) ◽  
pp. H375 ◽  
Author(s):  
Seok-Jun Seo ◽  
SeungCheol Yang ◽  
Ji-Hoon Ko ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Inorganic Hybrid ◽  
Stability Of Solution ◽  
Zinc Tin Oxide

Bias Stress Stability of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2009 ◽  
Vol 156 (11) ◽  
pp. H808 ◽  
Author(s):  
Youngmin Jeong ◽  
Keunkyu Song ◽  
Dongjo Kim ◽  
Chang Young Koo ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Bias Stress ◽  
Stability Of Solution ◽  
Zinc Tin Oxide

Self-Aligned Solution-Processed Zinc-Tin Oxide Thin-Film Transistors with High-K Solution-Processed Gate Dielectric

2010 ◽  
Vol 1247 ◽  
Author(s):  
Chen-Guan Lee ◽  
Soumya Dutta ◽  
Ananth Dodabalapur
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Channel Length ◽  
Parasitic Capacitance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
High K ◽  
Zinc Tin Oxide

AbstractWe demonstrate high performance zinc-tin oxide (ZTO) thin-film transistors (TFTs) with low operation voltage, small channel length and low parasitic capacitance. Both the zinc tin oxide and the high-k dielectric, ZrO2, were solution processed by sol-gel methods. A self-aligned process was employed to minimize the parasitic capacitance. The transistors with a channel length of 8 μm operate at 5 V and have a saturation mobility of 2.5 cm2/V·s and an on/off ratio of 5.9×106. Gate-induced surface relief has been found to have strong effect on the performance of the active layer.

Solution-Processed Oxide Thin Film Transistors with Indium Zinc Tin Oxide Semiconductor: Nitrogen Effect

2019 ◽  
Vol 33 (5) ◽  
pp. 295-299 ◽  
Author(s):  
Bong-Jin Kim ◽  
Hyung-Jun Kim ◽  
Sung Mok Jung ◽  
Tae-Sik Yoon ◽  
Yong-Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Nitrogen Effect ◽  
Zinc Tin Oxide

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Zinc Tin Oxide
Sign in / Sign up

Export Citation Format

Share Document