Towards environmentally stable solution-processed oxide thin-film transistors: a rare-metal-free oxide-based semiconductor/insulator heterostructure and chemically stable multi-stacking

2017 ◽  
Vol 5 (40) ◽  
pp. 10498-10508 ◽  
Author(s):  
Sung Woon Cho ◽  
Da Eun Kim ◽  
Kyung Su Kim ◽  
Sung Hyun Jung ◽  
Hyung Koun Cho
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Stable Solution ◽  
Rare Metal ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Practical Solution ◽  
Metal Free ◽  
Oxide Tfts

ZTO/Al2O3 heterostructure and chemically stable sol–gel multi-stacking method are proposed for practical solution-processed oxide TFTs.

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
On Chip

Bias-Stress-Stable Solution-Processed Oxide Thin Film Transistors

2010 ◽  
Vol 2 (3) ◽  
pp. 611-615 ◽  
Author(s):  
Youngmin Jeong ◽  
Changdeuck Bae ◽  
Dongjo Kim ◽  
Keunkyu Song ◽  
Kyoohee Woo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stable Solution ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Bias Stress

Self-Aligned Solution-Processed Zinc-Tin Oxide Thin-Film Transistors with High-K Solution-Processed Gate Dielectric

2010 ◽  
Vol 1247 ◽  
Author(s):  
Chen-Guan Lee ◽  
Soumya Dutta ◽  
Ananth Dodabalapur
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Channel Length ◽  
Parasitic Capacitance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
High K ◽  
Zinc Tin Oxide

AbstractWe demonstrate high performance zinc-tin oxide (ZTO) thin-film transistors (TFTs) with low operation voltage, small channel length and low parasitic capacitance. Both the zinc tin oxide and the high-k dielectric, ZrO2, were solution processed by sol-gel methods. A self-aligned process was employed to minimize the parasitic capacitance. The transistors with a channel length of 8 μm operate at 5 V and have a saturation mobility of 2.5 cm2/V·s and an on/off ratio of 5.9×106. Gate-induced surface relief has been found to have strong effect on the performance of the active layer.

Environmentally Stable, Solution-Processed Indium Boron Zinc Oxide Thin-Film Transistors

2020 ◽  
Vol 49 (9) ◽  
pp. 5606-5612 ◽  
Author(s):  
S. Arulkumar ◽  
S. Parthiban ◽  
G. Dharmalingam ◽  
Bindu Salim ◽  
J. Y. Kwon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Stable Solution ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed

Electrically Stable, Solution-Processed Amorphous Oxide IZO Thin-Film Transistors Through a UV-Ozone Assisted Sol-Gel Approach

2014 ◽  
Vol 61 (4) ◽  
pp. 1093-1100 ◽  
Author(s):  
Thokchom Birendra Singh ◽  
Jacek Jaroslaw Jasieniak ◽  
Leonardo de Oliveira Tozi ◽  
Christopher David Easton ◽  
Mark Bown
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Stable Solution ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Izo Thin Film ◽  
Uv Ozone

scholarly journals Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 965
Author(s):  
Yanwei Li ◽  
Chun Zhao ◽  
Deliang Zhu ◽  
Peijiang Cao ◽  
Shun Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Large Scale ◽  
Low Cost ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Solution Processed ◽  
Recent Advances ◽  
Oxide Tfts

Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.

scholarly journals Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors

2015 ◽  
Vol 3 (28) ◽  
pp. 7499-7505 ◽  
Author(s):  
Mardhiah M. Sabri ◽  
Joohye Jung ◽  
Doo Hyun Yoon ◽  
Seokhyun Yoon ◽  
Young Jun Tak ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydroxyl Radical ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Assisted Decomposition ◽  
Indium Oxide Thin Film ◽  
Oxide Tfts

Solution-processed indium oxide TFTs were fabricated by hydroxyl radical-assisted (HRA) decomposition and oxidation.

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