scholarly journals Thin-Film Transistors: Large-Scale Precise Printing of Ultrathin Sol-Gel Oxide Dielectrics for Directly Patterned Solution-Processed Metal Oxide Transistor Arrays (Adv. Mater. 34/2015)

2015 ◽  
Vol 27 (34) ◽  
pp. 5091-5091
Author(s):  
Won-June Lee ◽  
Won-Tae Park ◽  
Sungjun Park ◽  
Sujin Sung ◽  
Yong-Young Noh ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Large Scale ◽  
Sol Gel ◽  
Solution Processed

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
On Chip

Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors

2018 ◽  
Vol 10 (31) ◽  
pp. 25878-25901 ◽  
Author(s):  
Wangying Xu ◽  
Hao Li ◽  
Jian-Bin Xu ◽  
Lei Wang
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Recent Advances ◽  
Metal Oxide Thin Film

Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities

2016 ◽  
Vol 4 (47) ◽  
pp. 11298-11304 ◽  
Author(s):  
Sooji Nam ◽  
Jong-Heon Yang ◽  
Sung Haeng Cho ◽  
Ji Hun Choi ◽  
Oh-Sang Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.

scholarly journals Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 612 ◽  
Author(s):  
Jae Heo ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Jingu Kang ◽  
Ho-Hyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
Mobility Solution

scholarly journals Study of Self-Patterned Zinc Tin Oxide Thin-Film Transistors Prepared from Photocurable Precursor Solution with Photoacid Generator

2021 ◽  
Vol 59 (3) ◽  
pp. 162-167
Author(s):  
Jae Young Kim ◽  
Geonoh Choe ◽  
Tae Kyu An ◽  
Yong Jin Jeong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Precursor Solution ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Zinc Tin Oxide ◽  
Photoacid Generator

Solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs) have great potential uses in next-generation wearable and flexible electronic products. Zinc and tin precursor materials are naturally abundant and have low fabrication costs. To integrate a single ZTO TFT into logic circuits including inverters, NAND, and NOR gates will require the development of a facile patterning process to replace conventional and complicated photolithography techniques which are usually time-consuming and toxic. In this study, self-patterned ZTO thin films were prepared using a photo-patternable precursor solution including a photoacid generator, (4-methylthiophenyl)methyl phenyl sulfonium triflate. Solution-processed ZTO precursor films fabricated with the photoacid generator were successfully micropatterned by UV exposure, and transitioned to a semiconducting ZTO thin film by heat treatment. The UV-irradiated precursor films became insoluble in developing solvent as the generated proton from the photoacid generator affected the metal-containing ligand and changed the solubility of the metal oxide precursors. The resulting ZTO thin films were utilized as the active layers of n-type TFTs, which exhibited a typical n-type transfer, and output characteristics with appropriate threshold voltage, on/off current ratio, and field-effect mobility. We believe that our work provides a convenient solution-based route to the fabrication of metal-oxide semiconductor patterns.

Lithium ion assisted hydration of metal ions in non-aqueous sol–gel inks for high performance metal oxide thin-film transistors

2015 ◽  
Vol 3 (24) ◽  
pp. 6276-6283 ◽  
Author(s):  
Jee Ho Park ◽  
Jin Young Oh ◽  
Hong Koo Baik ◽  
Tae Il Lee
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Metal Ions ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Lithium Ion ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Enhanced hydration lowers the dehydroxylation temperature of the sol–gel inks, resulting in high-performance metal oxide thin film transistors.

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