Plasma Parameters and Active Species Kinetics in an Inductively Coupled HBr Plasma

2008 ◽  
Vol 52 (1) ◽  
pp. 48-55 ◽  
Author(s):  
Alexander Efremov ◽  
Bok-Gil Choi ◽  
Sahn Nahm ◽  
Hyun Woo Lee ◽  
Nam-Ki Min ◽  
...  
Keyword(s):  
Active Species ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Hbr Plasma

Plasma Etching of Stearic Acid in Ar and Ar-O2 DC Discharges

2010 ◽  
Vol 660-661 ◽  
pp. 599-604 ◽  
Author(s):  
E.A. Bernardelli ◽  
T. Souza ◽  
A.M. Maliska ◽  
Thierry Belmonte ◽  
M. Mafra
Keyword(s):  
Stearic Acid ◽  
Plasma Etching ◽  
Gas Flow ◽  
Etching Rate ◽  
Active Species ◽  
Acid Modification ◽  
Plasma Parameters ◽  
Experimental Conditions ◽  
Variation Rate ◽  
Temperature Output

Stearic acid is treated in a DC Ar-O2 plasma created by a cathode-anode confined system. The influence of the most important process parameters (gas flow rate, sample temperature, output power and exposure time) on the acid modification is studied. The evaluation of the influence of these parameters on grafting and etching of stearic acid was done by measuring the mass variation rate (MVR). The results show that when charged and chemically active species increase in density, what is directly connected with plasma parameters, the MVR increases too. In all experimental conditions, a negative MVR was obtained, due to the etching of the sample. The etching rate decreases with processing time, probably because of the formation of a product which is more resistant to plasma etching.

Etching Characteristics of Silicon in Inductively-Coupled Ar/HBr Plasma

2003 ◽  
Vol 2003.6 (0) ◽  
pp. 195-196
Author(s):  
Kenichi NANBU ◽  
Masayoshi TAKAHASHI ◽  
Atsushi ITO
Keyword(s):  
Inductively Coupled ◽  
Hbr Plasma

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

2007 ◽  
Author(s):  
Jia Cheng ◽  
Yu Zhu ◽  
Guanghong Duan ◽  
Yangying Chen
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Three Dimensional ◽  
Argon Plasma ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Parameters Selection ◽  
Dimensional Distribution ◽  
Discharge Model ◽  
Discharge Simulation

Based on the commercial software, CFD-ACE+, a three-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature and the electron number density (END) of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distribution profiles of the plasma parameters above the wafer’s surface at different pressures and powers were compared. These results demonstrate that the END increases with both pressure and power. And the electron temperature decreases with pressure. The methods and conclusions can be used to provide some reference for the configurations of the chamber and the coil of the ICP equipment design and improvement and process parameters selection.

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