scholarly journals Correlation of RF impedance with Ar plasma parameters in semiconductor etch equipment using inductively coupled plasma

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025027
Author(s):  
Nayeon Lee ◽  
Ohyung Kwon ◽  
Chin-Wook Chung
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Ar Plasma

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

2007 ◽  
Author(s):  
Jia Cheng ◽  
Yu Zhu ◽  
Guanghong Duan ◽  
Yangying Chen
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Three Dimensional ◽  
Argon Plasma ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Parameters Selection ◽  
Dimensional Distribution ◽  
Discharge Model ◽  
Discharge Simulation

Based on the commercial software, CFD-ACE+, a three-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature and the electron number density (END) of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distribution profiles of the plasma parameters above the wafer’s surface at different pressures and powers were compared. These results demonstrate that the END increases with both pressure and power. And the electron temperature decreases with pressure. The methods and conclusions can be used to provide some reference for the configurations of the chamber and the coil of the ICP equipment design and improvement and process parameters selection.

scholarly journals On the Temperature and Plasma Distribution of an Inductively Driven Xe-I2-Discharge

Plasma ◽  
2021 ◽  
Vol 4 (4) ◽  
pp. 745-754
Author(s):  
Tim Gehring ◽  
Santiago Eizaguirre ◽  
Qihao Jin ◽  
Jan Dycke ◽  
Manuel Renschler ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Inductively Coupled Plasma ◽  
Cost Effective ◽  
Present Species ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
2D Simulation ◽  
Cost Effective Method ◽  
Plasma Distribution ◽  
Maximal Deviation

Inductively Coupled Plasma (ICP) discharges are part of intense research. Predicting different plasma parameters, like the distribution and temperature of the present species, is of great interest for many applications. Iodine- or halide-containing plasmas in particular have an important function, for example, in the development of mercury-free UV radiation sources. Therefore, a 2D simulation model of a xenon- and iodine-containing ICP was created by using the Finite Element Method (FEM) software COMSOL Multiphysics®. The included species and the used reactions are presented in this paper. To verify the simulation in relation to the plasma distribution, the results were compared with measurements from literature. The temperature of the lamp vessel was measured in relation to the temperature distribution and also compared with the results of the simulation. It could be shown that the simulation reproduces the plasma distribution with a maximal deviation of ≈6.5% to the measured values and that the temperature distribution in the examined area can be predicted with deviations of up to ≈24% for long vessel dimensions and ≈3% for shorter dimensions. However, despite the deviating absolute values, the general plasma behaviour is reproduced by the simulation. The simulation thus offers a fast and cost-effective method to estimate an effective geometrical range of iodine-containing ICPs.

Inductively coupled plasma reactive ion etching of copper thin films using ethylenediamine/butanol/Ar plasma

Vacuum ◽  
2020 ◽  
Vol 181 ◽  
pp. 109421
Author(s):  
Moon Hwan Cha ◽  
Eun Taek Lim ◽  
Sung Yong Park ◽  
Ji Su Lee ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Ar Plasma
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