Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl[sub 2]∕X (X=Ar, He, N[sub 2]) Inductively Coupled Plasmas

2008 ◽  
Vol 155 (12) ◽  
pp. D777 ◽  
Author(s):  
Alexander Efremov ◽  
Nam-Ki Min ◽  
Bok-Gil Choi ◽  
Kyu-Ha Baek ◽  
Kwang-Ho Kwon
Keyword(s):  
Active Species ◽  
Inductively Coupled Plasmas ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Model Based ◽  
Coupled Plasmas ◽  
Model Based Analysis

A Model-Based Analysis of Plasma Parameters and Composition in HBr/X (X=Ar, He, N[sub 2]) Inductively Coupled Plasmas

2010 ◽  
Vol 157 (5) ◽  
pp. H574 ◽  
Author(s):  
Kwang-Ho Kwon ◽  
Alexander Efremov ◽  
Moonkeun Kim ◽  
Nam Ki Min ◽  
Jaehwa Jeong ◽  
...  
Keyword(s):  
Inductively Coupled Plasmas ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Model Based ◽  
Coupled Plasmas ◽  
Model Based Analysis

Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns

2015 ◽  
Vol 15 (10) ◽  
pp. 8340-8347 ◽  
Author(s):  
Junmyung Lee ◽  
Alexander Efremov ◽  
Geun Young Yeom ◽  
Nomin Lim ◽  
Kwang-Ho Kwon
Keyword(s):  
Fluorine Atom ◽  
Gas Flow ◽  
Optical Emission ◽  
Active Species ◽  
Great Decrease ◽  
Inductively Coupled Plasmas ◽  
Decay Kinetics ◽  
Bias Power ◽  
Inductively Coupled ◽  
Coupled Plasmas

An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was performed. It was found that the variations in the CF4/C4F8 mixing ratio in the range of 0–50% at a constant Ar fraction of 50% resulted in slightly non-monotonic Si and SiO2 etching rates in CF4-rich plasmas and greatly decreasing etching rates in C4F8-rich plasmas. The zero-dimensional plasma model, Langmuir probe diagnostics, and optical emission spectroscopy provided information regarding the formation-decay kinetics for the plasma active species, along with their densities and fluxes. The model-based analysis of the etching kinetics indicated that the non-monotonic etching rates were caused not by the similar behavior of the fluorine atom density but rather by the opposite changes of the fluorine atom flux and ion energy flux. It was also determined that the great decrease in both the Si and SiO2 etching rates during the transition from the CF4/Ar to C4F8/Ar gas system was due to the deposition of the fluorocarbon polymer film.

Plasma parameters analysis of various mixed gas inductively coupled plasmas

2002 ◽  
Vol 9 (6) ◽  
pp. 2831-2838 ◽  
Author(s):  
K. H. Bai ◽  
S. J. You ◽  
H. Y. Chang ◽  
H. S. Uhm
Keyword(s):  
Inductively Coupled Plasmas ◽  
Mixed Gas ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Parameters Analysis ◽  
Coupled Plasmas

scholarly journals Erratum: Power Matching to Pulsed Inductively Coupled Plasmas [J. Appl. Phys. 127, 133302 (2020)]

2020 ◽  
Vol 128 (8) ◽  
pp. 089901
Author(s):  
Chenhui Qu ◽  
Steven J. Lanham ◽  
Steven C. Shannon ◽  
Sang Ki Nam ◽  
Mark J. Kushner
Keyword(s):  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Power Matching ◽  
Coupled Plasmas

Etching characteristics of ZnO thin films in chlorine-containing inductively coupled plasmas

2006 ◽  
Vol 83 (2) ◽  
pp. 328-335 ◽  
Author(s):  
S.W. Na ◽  
M.H. Shin ◽  
Y.M. Chung ◽  
J.G. Han ◽  
S.H. Jeung ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

scholarly journals Nonlinear electromagnetic fields in 0.5 MHz inductively coupled plasmas

2003 ◽  
Vol 10 (4) ◽  
pp. 1146-1151 ◽  
Author(s):  
K. Ostrikov ◽  
E. Tsakadze ◽  
S. Xu ◽  
S. V. Vladimirov ◽  
R. Storer
Keyword(s):  
Electromagnetic Fields ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Inductively Coupled Plasmas

1974 ◽  
Vol 46 (13) ◽  
pp. 1155A-1162A ◽  
Author(s):  
Velmer A. Fassel ◽  
Richard N. Kniseley
Keyword(s):  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas
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