scholarly journals Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

10.3791/58113 ◽  
2018 ◽  
Author(s):  
Kai Ding ◽  
Vitaliy Avrutin ◽  
Natalia Izioumskaia ◽  
Md Barkat Ullah ◽  
Ümit Özgür ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes

Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111)

1988 ◽  
Vol 64 (8) ◽  
pp. 4082-4085 ◽  
Author(s):  
R. W. Fathauer ◽  
T. L. Lin ◽  
P. J. Grunthaner ◽  
P. O. Andersson ◽  
J. M. Iannelli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Barrier Heights ◽  
Effective Barrier

Characterization of Al/GaAs Schottky barriers with thin Si interfacial layers

1993 ◽  
Vol 51 ◽  
pp. 800-801
Author(s):  
M.W. Bench ◽  
T.J. Miller ◽  
M.I. Nathan ◽  
C.B. Carter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Barrier Height ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Growth Conditions ◽  
High Energy ◽  
Exact Nature ◽  
Interfacial Layers ◽  
Transmission Electron ◽  
Layer Structures

It has been shown in previous reports that barrier height variations can be achieved in GaAs Schottky diodes grown using molecular beam epitaxy by utilizing a thin epitaxial Si layer (a few monolayers) between the GaAs and the Al contact. The effective barrier height was found to be dependent on the thickness and growth conditions of the Si layer. However, there has remained a question as to the exact nature of the interfacial Si layer. In the present investigation, samples with different Si layer thicknesses (no Si, 6 Å Si, and 20 Å Si, as determined in situ during growth using reflection high energy electron diffraction (RHEED)) were characterized using transmission electron microscopy (TEM) to determine the nature of the Si layers. In the present study, it was also found that the presence of the interfacial Si layers affected the growth orientation and morphology of the Al layers.The layer structures investigated were grown using molecular beam epitaxy in a system described elsewhere.

GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 109 (8) ◽  
pp. 082102 ◽  
Author(s):  
H. Y. Tseng ◽  
W. C. Yang ◽  
P. Y. Lee ◽  
C. W. Lin ◽  
Kai-Yuan Cheng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Schottky Diodes

Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy

2001 ◽  
Vol 78 (15) ◽  
pp. 2172-2174 ◽  
Author(s):  
Peter W. Deelman ◽  
Robert N. Bicknell-Tassius ◽  
Sergey Nikishin ◽  
Vladimir Kuryatkov ◽  
Henryk Temkin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Low Noise

Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy

1997 ◽  
Vol 71 (8) ◽  
pp. 1023-1025 ◽  
Author(s):  
Chun-Xia Du ◽  
Wei-Xin Ni ◽  
Kenneth B. Joelsson ◽  
Göran V. Hansson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Light Emission ◽  
Schottky Diodes ◽  
Erbium Doped
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