GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 109 (8) ◽  
pp. 082102 ◽  
Author(s):  
H. Y. Tseng ◽  
W. C. Yang ◽  
P. Y. Lee ◽  
C. W. Lin ◽  
Kai-Yuan Cheng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Schottky Diodes

Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111)

1988 ◽  
Vol 64 (8) ◽  
pp. 4082-4085 ◽  
Author(s):  
R. W. Fathauer ◽  
T. L. Lin ◽  
P. J. Grunthaner ◽  
P. O. Andersson ◽  
J. M. Iannelli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Barrier Heights ◽  
Effective Barrier

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

2012 ◽  
Vol 111 (6) ◽  
pp. 064112 ◽  
Author(s):  
Miri Choi ◽  
Agham Posadas ◽  
Rytis Dargis ◽  
Chih-Kang Shih ◽  
Alexander A. Demkov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Strain Relaxation

Novel InGaPBi single crystal grown by molecular beam epitaxy

2015 ◽  
Vol 8 (4) ◽  
pp. 041201 ◽  
Author(s):  
Li Yue ◽  
Peng Wang ◽  
Kai Wang ◽  
Xiaoyan Wu ◽  
Wenwu Pan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

scholarly journals Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

10.3791/58113 ◽  
2018 ◽  
Author(s):  
Kai Ding ◽  
Vitaliy Avrutin ◽  
Natalia Izioumskaia ◽  
Md Barkat Ullah ◽  
Ümit Özgür ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes

Summary Abstract: Growth of single crystal and polycrystalline insulating fluoride films on semiconductors by molecular beam epitaxy

1982 ◽  
Vol 20 (3) ◽  
pp. 731-732 ◽  
Author(s):  
P. W. Sullivan ◽  
T. I. Cox ◽  
R. F. C. Farrow ◽  
G. R. Jones ◽  
D. B. Gasson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Single-crystal zincblende GaN grown on GaP (100) substrate by molecular beam epitaxy

2003 ◽  
Vol 251 (1-4) ◽  
pp. 465-470 ◽  
Author(s):  
Min-Ho Kim ◽  
F.S. Juang ◽  
Y.G. Hong ◽  
C.W. Tu ◽  
Seong-Ju Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxy

1990 ◽  
Vol 99 (1-4) ◽  
pp. 451-454 ◽  
Author(s):  
Yoshitaka Tomomura ◽  
Masahiko Kitagawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Homoepitaxial Growth

Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films

1976 ◽  
Vol 15 (6) ◽  
pp. 1001-1007 ◽  
Author(s):  
Takafumi Yao ◽  
Satoru Amano ◽  
Yunosuke Makita ◽  
Shigeru Maekawa
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Elastic anomalies in single crystal copper/nickel superlattices grown by molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 1154-1158 ◽  
Author(s):  
Kiyoshi Sakaue, ◽  
Naokatsu Sano ◽  
Hikaru Terauchi ◽  
Akira Yoshihara
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Single Crystal Copper ◽  
Copper Nickel ◽  
Elastic Anomalies
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