Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy

2010 ◽  
Vol 107 (5) ◽  
pp. 054518 ◽  
Author(s):  
A. R. Arehart ◽  
C. Poblenz ◽  
J. S. Speck ◽  
S. A. Ringel
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Nitrogen Plasma ◽  
Plasma Power ◽  
Defect Levels

Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111)

1988 ◽  
Vol 64 (8) ◽  
pp. 4082-4085 ◽  
Author(s):  
R. W. Fathauer ◽  
T. L. Lin ◽  
P. J. Grunthaner ◽  
P. O. Andersson ◽  
J. M. Iannelli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Barrier Heights ◽  
Effective Barrier

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

2018 ◽  
Vol 52 (12) ◽  
pp. 1529-1533 ◽  
Author(s):  
A. M. Mizerov ◽  
S. N. Timoshnev ◽  
M. S. Sobolev ◽  
E. V. Nikitina ◽  
K. Yu. Shubina ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Initial Stage

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

scholarly journals Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

10.3791/58113 ◽  
2018 ◽  
Author(s):  
Kai Ding ◽  
Vitaliy Avrutin ◽  
Natalia Izioumskaia ◽  
Md Barkat Ullah ◽  
Ümit Özgür ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes

p‐type CdSe grown by molecular beam epitaxy using a nitrogen plasma source

1994 ◽  
Vol 65 (4) ◽  
pp. 466-468 ◽  
Author(s):  
Takeo Ohtsuka ◽  
Junji Kawamata ◽  
Ziqiang Zhu ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
P Type

Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions

2006 ◽  
Vol 100 (8) ◽  
pp. 083516 ◽  
Author(s):  
Muhammad B. Haider ◽  
Rong Yang ◽  
Costel Constantin ◽  
Erdong Lu ◽  
Arthur R. Smith ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Surface Reconstructions

High carrier concentrations of n- and p-doped GaN on Si(111) by nitrogen plasma-assisted molecular-beam epitaxy

2007 ◽  
Vol 22 (9) ◽  
pp. 2623-2630 ◽  
Author(s):  
L.S. Chuah ◽  
Z. Hassan ◽  
S.S. Ng ◽  
H. Abu Hassan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Nitrogen Plasma ◽  
Infrared Analysis ◽  
Hall Measurements ◽  
Band Emission ◽  
Gan On Si ◽  
Gan Crystal ◽  
Good Agreement

High-quality doped GaN layers were grown on silicon substrates by radio frequency nitrogen plasma-assisted molecular-beam epitaxy. High-temperature-grown AlN (about 200 nm) was used as a buffer layer. In-growth doping was done using high-purity Si and Mg as n- and p-type dopants, respectively. X-ray diffraction revealed that monocrystalline GaN was obtained. This is in good agreement with the results of morphological study by atomic force microscopy. Micro-photoluminescence (PL) and micro-Raman spectroscopy were used to study the room-temperature optical properties of the doping films. No yellow-band emission was observed in the PL spectroscopy. From the Hall measurements, the resulting n-type doping concentration was measured to be (1–2) × 1019 cm−3. Fairly uniform hole concentration as high as (4–5) × 1020 cm−3 throughout the GaN crystal was achieved. In terms of the carrier concentration, it was found that the results determined from the Fourier transform infrared analysis are in good agreement with the results determined from the Hall measurements.

Nitrogen-Plasma Energetics Effect on Phase Separation of InxGa1-xN Nanorods Grown by RF-Plasma Assisted Molecular Beam Epitaxy

2013 ◽  
Vol 6 (11) ◽  
pp. 111003 ◽  
Author(s):  
Hye-Won Seo ◽  
Samir M. Hamad ◽  
Dever P. Norman ◽  
Filiz Keles ◽  
Quark Y. Chen
Keyword(s):  
Phase Separation ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Rf Plasma
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