scholarly journals Non-Carbon 2D Materials-Based Field-Effect Transistor Biosensors: Recent Advances, Challenges, and Future Perspectives

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4811 ◽  
Author(s):  
Mohammed Sedki ◽  
Ying Chen ◽  
Ashok Mulchandani
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
High Sensitivity ◽  
Future Perspectives ◽  
Recent Advances ◽  
Metal Dichalcogenides ◽  
Biosensor Applications

In recent years, field-effect transistors (FETs) have been very promising for biosensor applications due to their high sensitivity, real-time applicability, scalability, and prospect of integrating measurement system on a chip. Non-carbon 2D materials, such as transition metal dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), black phosphorus (BP), and metal oxides, are a group of new materials that have a huge potential in FET biosensor applications. In this work, we review the recent advances and remarkable studies of non-carbon 2D materials, in terms of their structures, preparations, properties and FET biosensor applications. We will also discuss the challenges facing non-carbon 2D materials-FET biosensors and their future perspectives.

scholarly journals Recent Advances on 2D Materials towards 3D Printing

Chemistry ◽  
2021 ◽  
Vol 3 (4) ◽  
pp. 1314-1346
Author(s):  
I. Jénnifer Gómez ◽  
Nuria Alegret ◽  
Antonio Dominguez-Alfaro ◽  
Manuel Vázquez Vázquez Sulleiro
Keyword(s):  
3D Printing ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Low Cost ◽  
Inorganic Compounds ◽  
Transition Metal Dichalcogenides ◽  
Recent Advances ◽  
Metal Dichalcogenides ◽  
3D Printers ◽  
Printed Materials

In recent years, 2D materials have been implemented in several applications due to their unique and unprecedented properties. Several examples can be named, from the very first, graphene, to transition-metal dichalcogenides (TMDs, e.g., MoS2), two-dimensional inorganic compounds (MXenes), hexagonal boron nitride (h-BN), or black phosphorus (BP). On the other hand, the accessible and low-cost 3D printers and design software converted the 3D printing methods into affordable fabrication tools worldwide. The implementation of this technique for the preparation of new composites based on 2D materials provides an excellent platform for next-generation technologies. This review focuses on the recent advances of 3D printing of the 2D materials family and its applications; the newly created printed materials demonstrated significant advances in sensors, biomedical, and electrical applications.

Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

2016 ◽  
Vol 8 (24) ◽  
pp. 15574-15581 ◽  
Author(s):  
Yongtao Li ◽  
Yan Wang ◽  
Le Huang ◽  
Xiaoting Wang ◽  
Xingyun Li ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

scholarly journals Additive manufacturing of patterned 2D semiconductor through recyclable masked growth

2019 ◽  
Vol 116 (9) ◽  
pp. 3437-3442 ◽  
Author(s):  
Yunfan Guo ◽  
Pin-Chun Shen ◽  
Cong Su ◽  
Ang-Yu Lu ◽  
Marek Hempel ◽  
...  
Keyword(s):  
Electronic Materials ◽  
Field Effect Transistors ◽  
2D Materials ◽  
Direct Synthesis ◽  
Scale Up ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Great Promise ◽  
Substrate Engineering ◽  
Metal Dichalcogenides

The 2D van der Waals crystals have shown great promise as potential future electronic materials due to their atomically thin and smooth nature, highly tailorable electronic structure, and mass production compatibility through chemical synthesis. Electronic devices, such as field effect transistors (FETs), from these materials require patterning and fabrication into desired structures. Specifically, the scale up and future development of “2D”-based electronics will inevitably require large numbers of fabrication steps in the patterning of 2D semiconductors, such as transition metal dichalcogenides (TMDs). This is currently carried out via multiple steps of lithography, etching, and transfer. As 2D devices become more complex (e.g., numerous 2D materials, more layers, specific shapes, etc.), the patterning steps can become economically costly and time consuming. Here, we developed a method to directly synthesize a 2D semiconductor, monolayer molybdenum disulfide (MoS2), in arbitrary patterns on insulating SiO2/Si via seed-promoted chemical vapor deposition (CVD) and substrate engineering. This method shows the potential of using the prepatterned substrates as a master template for the repeated growth of monolayer MoS2 patterns. Our technique currently produces arbitrary monolayer MoS2 patterns at a spatial resolution of 2 μm with excellent homogeneity and transistor performance (room temperature electron mobility of 30 cm2 V−1 s−1 and on–off current ratio of 107). Extending this patterning method to other 2D materials can provide a facile method for the repeatable direct synthesis of 2D materials for future electronics and optoelectronics.

Electrical Characteristics of a Chemical Vapor Deposition-Grown MoS2 Monolayer-Based Field Effect Transistor

2020 ◽  
Vol 15 (6) ◽  
pp. 673-678
Author(s):  
Soo-Young Kang ◽  
Gil-Sung Kim ◽  
Min-Sung Kang ◽  
Won-Yong Lee ◽  
No-Won Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Mos2 Monolayer ◽  
2D Semiconductors ◽  
Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) are layered two-dimensional (2D) semiconductors and have received significant attention for their potential application in field effect transistors (FETs), owing to their inherent characteristics. Among the various reported 2D TMD materials, monolayer (ML) molybdenum disulfide (MoS2) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as ∼1 nm. In this work, we present chemical vapor deposition-grown triangular ML MoS2 with a lateral size of ∼22 μm and surface coverage of ∼47%, as well as a PMMA-based wet transfer process for depositing the as-grown triangular ML MoS2 flakes onto a SiO2 (∼100 nm)/p++-Si substrate. Additionally, we demonstrate the fabrication of an n-type MoS2-based FET device and study its electrical characteristics as a function of the gate voltage. Our FET device shows an excellent on/off ratio of ∼106, an off-state leakage current of less than 10– 12 A, and a field effect mobility of ∼10.4 cm2/Vs at 300 K.

scholarly journals Efficient and Versatile Modeling of Mono- and Multi-Layer MoS2 Field Effect Transistor

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1385
Author(s):  
Nicola Pelagalli ◽  
Emiliano Laudadio ◽  
Pierluigi Stipa ◽  
Davide Mencarelli ◽  
Luca Pierantoni
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Constitutive Relations ◽  
Transition Metal Dichalcogenides ◽  
Wave Model ◽  
Novel Device ◽  
Full Wave ◽  
3D Geometry ◽  
Metal Dichalcogenides ◽  
Active Channel

Two-dimensional (2D) materials with intrinsic atomic-level thicknesses are strong candidates for the development of deeply scaled field-effect transistors (FETs) and novel device architectures. In particular, transition-metal dichalcogenides (TMDCs), of which molybdenum disulfide (MoS2) is the most widely studied, are especially attractive because of their non-zero bandgap, mechanical flexibility, and optical transparency. In this contribution, we present an efficient full-wave model of MoS2-FETs that is based on (1) defining the constitutive relations of the MoS2 active channel, and (2) simulating the 3D geometry. The former is achieved by using atomistic simulations of the material crystal structure, the latter is obtained by using the solver COMSOL Multiphysics. We show examples of FET simulations and compare, when possible, the theoretical results to the experimental from the literature. The comparison highlights a very good agreement.

Remarkably high thermal-driven MoS2 grain boundary migration mobility and its implications on defect healing

Nanoscale ◽  
2020 ◽  
Vol 12 (34) ◽  
pp. 17746-17753
Author(s):  
Xiangjun Liu ◽  
Zhi Gen Yu ◽  
Gang Zhang ◽  
Yong-Wei Zhang
Keyword(s):  
Robust Control ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Migration ◽  
Transition Metal Dichalcogenides ◽  
Grain Boundary Migration ◽  
Two Dimensional ◽  
Defect Healing ◽  
Metal Dichalcogenides ◽  
Device Applications

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for many important device applications, such as field effect transistors and sensors, which require a robust control of defect type, density, and distribution.

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