scholarly journals Efficient and Versatile Modeling of Mono- and Multi-Layer MoS2 Field Effect Transistor

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1385
Author(s):  
Nicola Pelagalli ◽  
Emiliano Laudadio ◽  
Pierluigi Stipa ◽  
Davide Mencarelli ◽  
Luca Pierantoni
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Constitutive Relations ◽  
Transition Metal Dichalcogenides ◽  
Wave Model ◽  
Novel Device ◽  
Full Wave ◽  
3D Geometry ◽  
Metal Dichalcogenides ◽  
Active Channel

Two-dimensional (2D) materials with intrinsic atomic-level thicknesses are strong candidates for the development of deeply scaled field-effect transistors (FETs) and novel device architectures. In particular, transition-metal dichalcogenides (TMDCs), of which molybdenum disulfide (MoS2) is the most widely studied, are especially attractive because of their non-zero bandgap, mechanical flexibility, and optical transparency. In this contribution, we present an efficient full-wave model of MoS2-FETs that is based on (1) defining the constitutive relations of the MoS2 active channel, and (2) simulating the 3D geometry. The former is achieved by using atomistic simulations of the material crystal structure, the latter is obtained by using the solver COMSOL Multiphysics. We show examples of FET simulations and compare, when possible, the theoretical results to the experimental from the literature. The comparison highlights a very good agreement.

Design, simulation and optimization of multi-layered MoS2 based FET devices

2021 ◽  
Author(s):  
Agraj Khare ◽  
Priyanka Dwivedi
Keyword(s):  
Dynamic Range ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Wave Model ◽  
Threshold Potential ◽  
Simulation And Optimization ◽  
Full Wave ◽  
Emerging Trends ◽  
Metal Dichalcogenides

Abstract Transition-metal Dichalcogenides (TMDs) materials are getting attention in the emerging trends of electronic devices development for a variety of applications. One of such materials is MoS2 which is best suited for developing deeply scaled field effect transistors (FETs). With the plethora of TMDs available, MoS2 is the most widely studied and used material because of its tunable properties like band gap, morphology, optical, structural, electrical, flexible etc. This paper represents the design and simulation aspect of the multi-layered MoS2 Based FET devices. Evidence of change in comparative electrical characteristics of MoS2 based FET devices due to variation of thickness and doping of the gate layer are also presented. In this contribution, we have simulated a full-wave model using the COMSOL Multiphysics module for two different thicknesses 0.7 nm and 1 nm. The FET device with 1 nm MoS2 offers a better dynamic range of operation and has a broader spectrum of threshold potential. The characteristic plots of the 1 nm device showed very less deviation from ideal trends than in the 0.7 nm device. The optimized FET structure offers better performance and efficiency in terms of electrical properties.

Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

2016 ◽  
Vol 8 (24) ◽  
pp. 15574-15581 ◽  
Author(s):  
Yongtao Li ◽  
Yan Wang ◽  
Le Huang ◽  
Xiaoting Wang ◽  
Xingyun Li ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

scholarly journals A Compact and Robust Technique for the Modeling and Parameter Extraction of Carbon Nanotube Field Effect Transistors

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2199
Author(s):  
Laura Falaschetti ◽  
Davide Mencarelli ◽  
Nicola Pelagalli ◽  
Paolo Crippa ◽  
Giorgio Biagetti ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Parameter Extraction ◽  
The Finite Element Method ◽  
Basic Step ◽  
Model Library ◽  
Full Wave ◽  
3D Geometry ◽  
Fitting Parameters

Carbon nanotubes field-effect transistors (CNTFETs) have been recently studied with great interest due to the intriguing properties of the material that, in turn, lead to remarkable properties of the charge transport of the device channel. Downstream of the full-wave simulations, the construction of equivalent device models becomes the basic step for the advanced design of high-performance CNTFET-based nanoelectronics circuits and systems. In this contribution, we introduce a strategy for deriving a compact model for a CNTFET that is based on the full-wave simulation of the 3D geometry by using the finite element method, followed by the derivation of a compact circuit model and extraction of equivalent parameters. We show examples of CNTFET simulations and extract from them the fitting parameters of the model. The aim is to achieve a fully functional description in Verilog-A language and create a model library for the SPICE-like simulator environment, in order to be used by IC designers.

Electrical Characteristics of a Chemical Vapor Deposition-Grown MoS2 Monolayer-Based Field Effect Transistor

2020 ◽  
Vol 15 (6) ◽  
pp. 673-678
Author(s):  
Soo-Young Kang ◽  
Gil-Sung Kim ◽  
Min-Sung Kang ◽  
Won-Yong Lee ◽  
No-Won Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Mos2 Monolayer ◽  
2D Semiconductors ◽  
Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) are layered two-dimensional (2D) semiconductors and have received significant attention for their potential application in field effect transistors (FETs), owing to their inherent characteristics. Among the various reported 2D TMD materials, monolayer (ML) molybdenum disulfide (MoS2) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as ∼1 nm. In this work, we present chemical vapor deposition-grown triangular ML MoS2 with a lateral size of ∼22 μm and surface coverage of ∼47%, as well as a PMMA-based wet transfer process for depositing the as-grown triangular ML MoS2 flakes onto a SiO2 (∼100 nm)/p++-Si substrate. Additionally, we demonstrate the fabrication of an n-type MoS2-based FET device and study its electrical characteristics as a function of the gate voltage. Our FET device shows an excellent on/off ratio of ∼106, an off-state leakage current of less than 10– 12 A, and a field effect mobility of ∼10.4 cm2/Vs at 300 K.

Remarkably high thermal-driven MoS2 grain boundary migration mobility and its implications on defect healing

Nanoscale ◽  
2020 ◽  
Vol 12 (34) ◽  
pp. 17746-17753
Author(s):  
Xiangjun Liu ◽  
Zhi Gen Yu ◽  
Gang Zhang ◽  
Yong-Wei Zhang
Keyword(s):  
Robust Control ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Migration ◽  
Transition Metal Dichalcogenides ◽  
Grain Boundary Migration ◽  
Two Dimensional ◽  
Defect Healing ◽  
Metal Dichalcogenides ◽  
Device Applications

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for many important device applications, such as field effect transistors and sensors, which require a robust control of defect type, density, and distribution.

scholarly journals Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 882 ◽  
Author(s):  
Yonatan Vaknin ◽  
Ronen Dagan ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Depletion Region ◽  
In Situ Monitoring ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Metal Dichalcogenides

The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.

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