scholarly journals Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras

Sensors ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 3610
Author(s):  
Adrián J. Torregrosa ◽  
Emir Karamehmedović ◽  
Haroldo Maestre ◽  
María Luisa Rico ◽  
Juan Capmany
Keyword(s):  
Optical Communications ◽  
Near Infrared ◽  
Nonlinear Crystal ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Infrared Image ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Oxide Semiconductor ◽  
Free Space Optical

Up-conversion sensing based on optical heterodyning of an IR (infrared) image with a local oscillator laser wave in a nonlinear optical sum-frequency mixing (SFM) process is a practical solution to circumvent some limitations of IR image sensors in terms of signal-to-noise ratio, speed, resolution, or cooling needs in some demanding applications. In this way, the spectral content of an IR image can become spectrally shifted to the visible/near infrared (VIS/NWIR) and then detected with silicon focal plane arrayed sensors (Si-FPA), such as CCD/CMOS (charge-coupled and complementary metal-oxide-semiconductor devices). This work is an extension of a previous study where we recently introduced this technique in the context of optical communications, in particular in FSOC (free-space optical communications). Herein, we present an image up-conversion system based on a 1064 nm Nd3+: YVO4 solid-state laser with a KTP (potassium titanyl phosphate) nonlinear crystal located intra-cavity where a laser beam at 1550 nm 2D spatially-modulated with a binary Quick Response (QR) code is mixed, giving an up-converted code image at 631 nm that is detected with an Si-based camera. The underlying technology allows for the extension of other IR spectral allocations, construction of compact receivers at low cost, and provides a natural way for increased protection against eavesdropping.

scholarly journals Bitstream Photon Counting Chirped AM Lidar with a Dual Unipolar Signal

2020 ◽  
Author(s):  
Brian Redman
Keyword(s):  
Integrated Circuits ◽  
Phase I ◽  
Signal To Noise Ratio ◽  
Photon Counting ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Sinusoidal Signal ◽  
Oxide Semiconductor ◽  
Quadrature Phase ◽  
Simulation Results

This paper is a follow-up to three previous papers: the first introducing the new Bitstream Photon Counting Chirped Amplitude Modulation (AM) Lidar (PC-CAML) with the unipolar Digital Logic Local Oscillator (DLLO) concept, the second introducing the improvement thereof using the bipolar DLLO, and the third introducing the improvement of digital In-phase and Quadrature-phase (I/Q) demodulation.In that previous work, the signal was a single unipolar chirped sinusoidal or square wave. This paper introduces a new bitstream PC-CAML transceiver architecture that combines two unipolar chirped signals, referred to as the dual unipolar signal, to form a single bipolar signal in the receiver. (patent pending) This bipolar signal is mixed with the bipolar DLLOs in the in-phase (I) digital mixing and quadrature-phase (Q) digital mixing channels for digital I/Q demodulation for improved signal-to-noise ratio (SNR) compared to that when using a single unipolar signal.The simulation results presented in this paper indicate an SNR improvement for the dual unipolar chirped sinusoidal signal bitstream PC-CAML compared to that of the unipolar chirped sinusoidal signal bitstream PC-CAML (both with bipolar DLLOs and digital I/Q demodulation) of from about 3 dB to about 6 dB for signals below the onset of receiver saturation, and an improvement for maximum achievable SNR of about 13 dB if the receiver is allowed to saturate.The bitstream PC-CAML with a dual unipolar signal and bipolar DLLOs with digital I/Q demodulation architecture discussed in this paper adds complexity to the transmitter and receiver compared to the architectures presented in the previous papers. Whether or not this additional complexity is worth the improved SNR will have to be decided as part of system trade studies for particular systems and their applications.However, the new architecture still retains the key advantages of the previous bitstream PC-CAML architectures since it still replaces bulky, power-hungry, and expensive wideband RF analog electronics in the receiver with digital components that can be implemented in inexpensive silicon complementary metal-oxide-semiconductor (CMOS) read-out integrated circuits (ROICs) to make the bitstream PC-CAML with a DLLO more suitable for compact lidar-on-a-chip systems and lidar array receivers than previous standard PC-CAML systems.This paper introduces the dual unipolar signal and bipolar DLLOs with digital I/Q demodulation transceiver architecture for bitstream PC-CAML, and presents the initial SNR theory with comparisons to Monte Carlo simulation results.

scholarly journals Bitstream Photon Counting Chirped AM Lidar with Digital I/Q Demodulation

2020 ◽  
Author(s):  
Brian Redman
Keyword(s):  
Integrated Circuits ◽  
Single Channel ◽  
Signal To Noise Ratio ◽  
Photon Counting ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Oxide Semiconductor ◽  
Signal To Noise ◽  
Receiver Architecture ◽  
Noise Ratio

This paper is a follow-up to two previous papers, one introducing the new bitstream Photon Counting Chirped Amplitude Modulation (AM) Lidar (PC-CAML) with the unipolar Digital Logic Local Oscillator (DLLO) concept, and the other paper introducing the improvement thereof using the bipolar DLLO. In that previous work, there was only a single channel of digital mixing of the DLLO with the received photon counting signal. This paper introduces a new bitstream PC-CAML receiver architecture with an in-phase (I) digital mixing channel and a quadrature phase (Q) digital mixing channel for digital I/Q demodulation with the bipolar DLLO to improve the signal-to-noise ratio (SNR) by 3 dB compared to that for the single digital mixing channel with the bipolar DLLO and by 5.5 dB compared to that for the single digital mixing channel with the unipolar DLLO. (patent pending) The bipolar DLLO with digital I/Q demodulation architecture discussed in this paper retains the key advantages of the previous bitstream PC-CAML with a DLLO systems since it also replaces bulky, power-hungry, and expensive wideband RF analog electronics with digital components that can be implemented in inexpensive silicon complementary metal-oxide-semiconductor (CMOS) read-out integrated circuits (ROICs) to make the bitstream PC-CAML with a DLLO more suitable for compact lidar-on-a-chip systems and lidar array receivers than previous PC-CAML systems. This paper introduces the bipolar DLLO with digital I/Q demodulation receiver architecture for bitstream PC-CAML and presents the initial signal-to-noise ratio (SNR) theory with comparisons to Monte Carlo simulation results.

scholarly journals Bitstream Photon Counting Chirped AM Lidar with a Digital Logic Local Oscillator

2019 ◽  
Author(s):  
Brian Redman
Keyword(s):  
Integrated Circuits ◽  
Signal To Noise Ratio ◽  
Logic Gate ◽  
Photon Counting ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Digital Logic ◽  
Oxide Semiconductor ◽  
Photon Counting Detector ◽  
Analog Electronics

This paper introduces a new concept for the local oscillator (LO) for the Photon Counting Chirped Amplitude Modulation Lidar (PC-CAML). Rather than using a radio-frequency (RF) analog LO applied electronically either in post-detection mixing or via opto-electronic mixing (OEM) at the detector, or applied via pre-detection mixing using an optical intensity modulator as in previous systems, the new method mixes the single-bit binary counts from the photon counting detector with a single-bit binary LO using an AND binary digital logic gate. This type of LO is called the Digital Logic Local Oscillator (DLLO), and the resulting PC-CAML system is a type of bitstream lidar called bitstream PC-CAML (patent pending).The key advantage of the DLLO in the bitstream PC-CAML is that it replaces bulky, power-hungry, and expensive wideband RF analog electronics with single-bit digital logic components that can be implemented in inexpensive silicon complementary metal-oxide-semiconductor (CMOS) read-out integrated circuits (ROICs) to make the bitstream PC-CAML with a DLLO more suitable for compact lidar-on-a-chip systems and lidar array receivers than previous PCCAML systems.This paper introduces the DLLO for bitstream PC-CAML concept, presents the initial signal-to-noise-ratio (SNR) theory with comparisons to Monte Carlo simulation results, and makes suggestions for future work on this concept.

Millimeter-wave dual-mode and dual-band switchable Gilbert up-conversion mixer in 65-nm CMOS process

2021 ◽  
pp. 1-5
Author(s):  
Fang Zhu ◽  
Guo Qing Luo
Keyword(s):  
Millimeter Wave ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Band ◽  
Cmos Process ◽  
Pumping Power ◽  
Dual Mode ◽  
Dc Power

Abstract In this paper, a millimeter-wave (MMW) dual-mode and dual-band switchable Gilbert up-conversion mixer in a commercial 65-nm complementary metal oxide semiconductor (CMOS) process is presented. By simply changing the bias, the proposed CMOS Gilbert up-conversion mixer can be switched between subharmonic and fundamental operation modes for MMW dual-band applications. With a low local oscillator pumping power of 3 dBm and low dc power consumption of 6 mW, the proposed CMOS Gilbert up-conversion mixer exhibits a measured conversion gain of −0.5 ± 1.5 dB from 37 to 50 GHz and 2.5 ± 1.5 dB from 17.5 to 32 GHz for the subharmonic and fundamental modes, respectively.

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

scholarly journals Light-Free Cross-Talk Analysis of a CMOS Infrared Detector Array

Proceedings ◽  
2020 ◽  
Vol 56 (1) ◽  
pp. 10
Author(s):  
Ying Dai ◽  
Syed Zeeshan Ali ◽  
Richard Hopper ◽  
Claudio Falco ◽  
Daniel Popa ◽  
...  
Keyword(s):  
Cross Talk ◽  
Low Cost ◽  
Infrared Detector ◽  
Complementary Metal Oxide Semiconductor ◽  
High Volume ◽  
Oxide Semiconductor ◽  
Simple Method ◽  
Monolithically Integrated ◽  
Thermal Cameras ◽  
Thermal Imagers

Low-cost infrared (IR) thermal cameras are powering a rising market of industrial and consumer applications. Complementary metal-oxide-semiconductor (CMOS)-based thermopile arrays are proven thermal imagers that can be monolithically integrated into low-cost and low-power-consumption formats for high-volume manufacturability. Here we present a simple method to evaluate the cross-talk of these arrays and propose a numerical model for device optimization.

scholarly journals Low-Cost 2D Index and Straightness Measurement System Based on a CMOS Image Sensor

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5461 ◽  
Author(s):  
Alain Küng ◽  
Benjamin A. Bircher ◽  
Felix Meli
Keyword(s):  
Measurement System ◽  
Degrees Of Freedom ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Oxide Semiconductor ◽  
Measurement Systems ◽  
Starting Point ◽  
Sensor Properties

Accurate traceable measurement systems often use laser interferometers for position measurements in one or more dimensions. Since interferometers provide only incremental information, they are often combined with index sensors to provide a stable reference starting point. Straightness measurements are important for machine axis correction and for systems having several degrees of freedom. In this paper, we investigate the accuracy of an optical two-dimensional (2D) index sensor, which can also be used in a straightness measurement system, based on a fiber-coupled, collimated laser beam pointing onto an image sensor. Additionally, the sensor can directly determine a 2D position over a range of a few millimeters. The device is based on a simple and low-cost complementary metal–oxide–semiconductor (CMOS) image sensor chip and provides sub-micrometer accuracy. The system is an interesting alternative to standard techniques and can even be implemented on machines for real-time corrections. This paper presents the developed sensor properties for various applications and introduces a novel error separation method for straightness measurements.

scholarly journals Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

Nanophotonics ◽  
2017 ◽  
Vol 6 (6) ◽  
pp. 1343-1352 ◽  
Author(s):  
Chuantong Cheng ◽  
Beiju Huang ◽  
Xurui Mao ◽  
Zanyun Zhang ◽  
Zan Zhang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Low Cost ◽  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Optical Signal ◽  
Optical Interconnect ◽  
Optical Receiver ◽  
Oxide Semiconductor ◽  
Experimental Realization ◽  
Operation Speed

AbstractOptical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

scholarly journals Photoacoustic Imaging with Capacitive Micromachined Ultrasound Transducers: Principles and Developments

Sensors ◽  
2019 ◽  
Vol 19 (16) ◽  
pp. 3617 ◽  
Author(s):  
Jasmine Chan ◽  
Zhou Zheng ◽  
Kevan Bell ◽  
Martin Le ◽  
Parsin Haji Reza ◽  
...  
Keyword(s):  
Photoacoustic Imaging ◽  
Signal To Noise Ratio ◽  
Complementary Metal Oxide Semiconductor ◽  
Photoacoustic Signal ◽  
Motion Artifacts ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Ultrasound Transducers ◽  
Fabrication Technique ◽  
Acoustic Techniques

Photoacoustic imaging (PAI) is an emerging imaging technique that bridges the gap between pure optical and acoustic techniques to provide images with optical contrast at the acoustic penetration depth. The two key components that have allowed PAI to attain high-resolution images at deeper penetration depths are the photoacoustic signal generator, which is typically implemented as a pulsed laser and the detector to receive the generated acoustic signals. Many types of acoustic sensors have been explored as a detector for the PAI including Fabry–Perot interferometers (FPIs), micro ring resonators (MRRs), piezoelectric transducers, and capacitive micromachined ultrasound transducers (CMUTs). The fabrication technique of CMUTs has given it an edge over the other detectors. First, CMUTs can be easily fabricated into given shapes and sizes to fit the design specifications. Moreover, they can be made into an array to increase the imaging speed and reduce motion artifacts. With a fabrication technique that is similar to complementary metal-oxide-semiconductor (CMOS), CMUTs can be integrated with electronics to reduce the parasitic capacitance and improve the signal to noise ratio. The numerous benefits of CMUTs have enticed researchers to develop it for various PAI purposes such as photoacoustic computed tomography (PACT) and photoacoustic endoscopy applications. For PACT applications, the main areas of research are in designing two-dimensional array, transparent, and multi-frequency CMUTs. Moving from the table top approach to endoscopes, some of the different configurations that are being investigated are phased and ring arrays. In this paper, an overview of the development of CMUTs for PAI is presented.

scholarly journals A Smart Floating Gate Transistor with Two Control Gates for Active Noise Control

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 722
Author(s):  
Mao ◽  
Yang ◽  
Ma ◽  
Yan ◽  
Zhang
Keyword(s):  
Large Scale ◽  
Noise Control ◽  
Low Cost ◽  
Active Noise Control ◽  
Complementary Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Active Noise ◽  
Floating Gate Transistor

A smart floating gate transistor with two control gates was proposed for active noise control in bioelectrical signal measurement. The device, which is low cost and capable of large-scale integration, was implemented in a standard single-poly complementary metal–oxide–semiconductor (CMOS) process. A model of the device was developed to demonstrate the working principle. Theoretical analysis and simulation results proved the superposition of the two control gates. A series of test experiments were carried out and the results showed that the device was in accordance with the basic electrical characteristics of a floating gate transistor, including the current–voltage (I–V) characteristics and the threshold characteristics observed on the two control gates. Based on the source follower circuit, the experimental results proved that the device can reduce interference by more than 29 dB, which demonstrates the feasibility of the proposed device for active noise control.

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