scholarly journals Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Sensors ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 3329
Author(s):  
Stefan Ilić ◽  
Aleksandar Jevtić ◽  
Srboljub Stanković ◽  
Goran Ristić
Keyword(s):  
Dose Range ◽  
Energy Band Diagram ◽  
Analog Device ◽  
Mos Transistor ◽  
Programmable Analog ◽  
Radiation Sensor ◽  
Dynamic Biasing ◽  
First Time ◽  
Dynamic Bias ◽  
Higher Sensitivity

This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.

scholarly journals SUN-042 Low Dose Cyproterone Acetate for the Treatment of Transgender Women - a Retrospective Study

2020 ◽  
Vol 4 (Supplement_1) ◽  
Author(s):  
Naomi Even-Zohar ◽  
Yael Sofer ◽  
Iris Yaish ◽  
Merav Serebro ◽  
Karen Tordjman ◽  
...  
Keyword(s):  
Cyproterone Acetate ◽  
Dose Group ◽  
Low Dose ◽  
Dose Range ◽  
Hormonal Treatment ◽  
Transgender Women ◽  
High Dose ◽  
Historical Cohort ◽  
Treatment Groups ◽  
First Time

Abstract Introduction : Transgender women with intact gonads receive lifelong hormonal treatment in order to suppress physiologic androgen production. Cyproterone acetate (CA) is the most comon antiandrogenic drug prescribed for this indication in Europe, with a dose range between 25-100 mg/day. Aim: To assess the effectiveness and safety of low dose (<20 mg/day), compared with high dose (>50 mg/day) CA treatment. Methods: Historical cohort study of transgender women treated in our department between January 2000 and October 2018. Results: There were 42 transgender women in the low dose group (LDG) and 32 in the high dose group (HDG). Age (27.9 ± 1.6 vs.28.9 ± 1.7 years) and follow up time (16.2 ± 2.2 vs. 20.1 ± 2.1 months) were similar in the LDG and HDG, respectively. At the last available visit, testosterone levels were effectively and similarly suppressed in both treatment groups (0.6 ± 0.1 vs 0.8 ± 0.3 nmol/l; p=0.37, for LDG and HDG respectively). Prolactin (659 ± 64 vs 486 ± 42 mIU/ml, p=0.02), LDL cholesterol (96.1 ± 5 vs 78.5 ± 4 mg/dl, p= 0.02) and triglycerides (93.3 ± 9 vs 69 ± 5 mg/dl; p=0.02) were higher in the HDG compared with LDG respectively. Side effects were common in the HDG (four cases of increased liver enzymes, one case of pulmonary embolism and one case of sudden death). Conclusion: We show for the first time that anti-androgenic treatment of transgender women with low dose CA is as effective as high dose treatment, but safer. We suggest incorporation of this observation in future guidelines.

scholarly journals Programmable ANalog Device Array (PANDA): A Methodology for Transistor-Level Analog Emulation

2013 ◽  
Vol 60 (6) ◽  
pp. 1369-1380 ◽  
Author(s):  
Jounghyuk Suh ◽  
Naveen Suda ◽  
Cheng Xu ◽  
Nagib Hakim ◽  
Yu Cao ◽  
...  
Keyword(s):  
Analog Device ◽  
Programmable Analog ◽  
Analog Emulation

CONSTRUCTION OF ANISOTYPE CdS/Si HETEROJUNCTION AND LINEUP USING I–V AND C–V MEASUREMENTS

2006 ◽  
Vol 20 (28) ◽  
pp. 1833-1838 ◽  
Author(s):  
RAID A. ISMAIL ◽  
ABDUL-MAJEED E. AL-SAMARAI ◽  
OMAR A. ABDULRAZAQ
Keyword(s):  
Spray Pyrolysis Technique ◽  
Energy Band Diagram ◽  
Chemical Spray Pyrolysis ◽  
Band Offset ◽  
Band Diagram ◽  
Valence Band Offset ◽  
Conduction Band Offset ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray ◽  
First Time

Near-ideal p-CdS/n-Si heterojunction (HJ) band edge lineup has been investigated for the first time with the aid of I–V and C–V measurements. The heterojunction was obtained by the deposition of CdS films prepared by chemical spray pyrolysis technique (CSP), on the monocrystalline n-type silicon. The experimental data of the conduction band offset, ΔEc and the valence band offset, ΔEc were compared with theoretical values. The band offsets ΔEc=530 meV and ΔEv=770 meV were obtained at 300 K. The energy band diagram of p-CdS/n-Si HJ was constructed. The C–V measurements depicted that the junction was an abrupt type and the built-in voltage was determined from the C-2–V plot.

scholarly journals Simulating past droughts and associated building damages in France

2009 ◽  
Vol 13 (9) ◽  
pp. 1739-1747 ◽  
Author(s):  
T. Corti ◽  
V. Muccione ◽  
P. Köllner-Heck ◽  
D. Bresch ◽  
S. I. Seneviratne
Keyword(s):  
Climate Change ◽  
Data Analysis ◽  
Simple Model ◽  
Soil Subsidence ◽  
Time Period ◽  
Damage Data ◽  
Considerable Impact ◽  
First Time ◽  
Strong Concern ◽  
Higher Sensitivity

Abstract. Droughts can induce important building damages due to shrinking and swelling of soils, leading to costs as large as for floods in some regions. Previous studies have focused on damage data analysis, geological or constructional aspects. Here, a study investigating the climatic aspects of soil subsidence damage is presented for the first time. We develop a simple model to examine if the meteorology has a considerable impact on the interannual variability of damages from soil subsidence in France. We find that the model is capable of reproducing yearly drought-induced building damages for the time period 1989–2002, thus suggesting a strong meteorological influence. Furthermore, our results reveal a doubling of damages in these years compared to 1961–1990, mainly as a consequence of increasing temperatures. This indicates a link to climate change. We also apply the model to the extreme summer of 2003, which caused a further increase in damage by a factor four, according to a preliminary damage estimate. The simulation result for that year shows strong damage underestimation, pointing to additional sources of vulnerability. Damage data suggest a higher sensitivity to soil subsidence of regions first affected by drought in the 2003 summer, possibly due to a lack of preparedness and adaptation. This is of strong concern in the context of climate change, as densely populated regions in Central Europe and North America are expected to become newly affected by drought in the future.

The visible band systems of GeH+ and GeD+ in the helium afterglow

1986 ◽  
Vol 64 (10) ◽  
pp. 1374-1378 ◽  
Author(s):  
Sumio Yamaguchi ◽  
Masaharu Tsuji ◽  
Yukio Nishimura
Keyword(s):  
Electronic Transition ◽  
Transition Moment ◽  
Spectroscopic Constants ◽  
Electronic Transition Moment ◽  
Visible Band ◽  
Condon Factors ◽  
First Time ◽  
Franck Condon ◽  
Morse Potentials ◽  
Higher Sensitivity

The [Formula: see text] intercombination bands of GeH+ and GeD+ have been observed from the helium afterglow reactions of GeH4 and GeD4, respectively. Only the (0,0) band of [Formula: see text] had been rotationally analyzed before; the higher sensitivity of the new measurements made possible the rotational analyses of four weaker bands. Eleven bands of [Formula: see text] were observed for the first time, and rotational analyses were made of five dominant bands. By using isotope relationships, we obtained detailed spectroscopic constants for the [Formula: see text] and X1Σ+ states of GeH+ and GeD+. Franck–Condon factors and r centroids of the [Formula: see text] transitions of GeH+ and GeD+ have been calculated on the basis of Morse potentials. The dependence of the electronic transition moment on the r centroid and the relative vibrational populations of [Formula: see text] and [Formula: see text] have been estimated.

The research and applications of programmable analog device

2005 ◽  
Author(s):  
Xiaohui Yang ◽  
Qiudi Zhao ◽  
Yongjian Yang
Keyword(s):  
Analog Device ◽  
Programmable Analog

scholarly journals Analytic models of CMOS logic in various regimes

2014 ◽  
Vol 11 (2) ◽  
pp. 269-290 ◽  
Author(s):  
Branko Dokic ◽  
Tatjana Pesic-Brdjanin ◽  
Rados Dabic
Keyword(s):  
Threshold Voltage ◽  
Digital Circuits ◽  
Constant Current ◽  
Functional Dependencies ◽  
Weak Inversion ◽  
Static And Dynamic Characteristics ◽  
Mos Transistor ◽  
Current Voltage ◽  
Analytic Models ◽  
First Time

In this paper, comparative analytic models of static and dynamic characteristics of CMOS digital circuits in strong, weak and mixed inversion regime have been described. Term mixed inversion is defined for the first time. The paper shows that there is an analogy in behavior and functional dependencies of parameters in all three CMOS regimes. Comparative characteristics of power consumption and speed in static regimes are given. Dependency of threshold voltage and logic delay time on temperature has been analyzed. Dynamic model with constant current is proposed. It is shown that digital circuits with dynamic threshold voltage of MOS transistor (DT-CMOS) have better logic delay characteristics. The analysis is based on simplified current-voltage MOS transistor models in strong and weak inversion regimes, as well as PSPICE software using 180 nm technology parameters.

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