scholarly journals Ultrasensitive and Highly Selective Graphene-Based Field-Effect Transistor Biosensor for Anti-Diuretic Hormone Detection

Sensors ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 2642 ◽  
Author(s):  
Reena Sri Selvarajan ◽  
Ruslinda A. Rahim ◽  
Burhanuddin Yeop Majlis ◽  
Subash C. B. Gopinath ◽  
Azrul Azlan Hamzah
Keyword(s):  
Human Serum ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Limit Of Detection ◽  
The Body ◽  
Artificial Kidney ◽  
Diuretic Hormone ◽  
Effect Transistor ◽  
Surface Modified ◽  
Relative Change

Nephrogenic diabetes insipidus (NDI), which can be congenital or acquired, results from the failure of the kidney to respond to the anti-diuretic hormone (ADH). This will lead to excessive water loss from the body in the form of urine. The kidney, therefore, has a crucial role in maintaining water balance and it is vital to restore this function in an artificial kidney. Herein, an ultrasensitive and highly selective aptameric graphene-based field-effect transistor (GFET) sensor for ADH detection was developed by directly immobilizing ADH-specific aptamer on a surface-modified suspended graphene channel. This direct immobilization of aptamer on the graphene surface is an attempt to mimic the functionality of collecting tube V 2 receptors in the ADH biosensor. This aptamer was then used as a probe to capture ADH peptide at the sensing area which leads to changes in the concentration of charge carriers in the graphene channel. The biosensor shows a significant increment in the relative change of current ratio from 5.76 to 22.60 with the increase of ADH concentration ranging from 10 ag/mL to 1 pg/mL. The ADH biosensor thus exhibits a sensitivity of 50.00 µA· ( g / mL ) − 1 with a limit of detection as low as 3.55 ag/mL. In specificity analysis, the ADH biosensor demonstrated a higher current value which is 338.64 µA for ADH-spiked in phosphate-buffered saline (PBS) and 557.89 µA for ADH-spiked in human serum in comparison with other biomolecules tested. This experimental evidence shows that the ADH biosensor is ultrasensitive and highly selective towards ADH in PBS buffer and ADH-spiked in human serum.

scholarly journals Field Effect Transistor Biosensor Using Antigen Binding Fragment for Detecting Tumor Marker in Human Serum

Materials ◽  
2014 ◽  
Vol 7 (4) ◽  
pp. 2490-2500 ◽  
Author(s):  
Shanshan Cheng ◽  
Kaori Hotani ◽  
Sho Hideshima ◽  
Shigeki Kuroiwa ◽  
Takuya Nakanishi ◽  
...  
Keyword(s):  
Tumor Marker ◽  
Human Serum ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Antigen Binding ◽  
Effect Transistor

scholarly journals One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2134
Author(s):  
Young Jun Yoon ◽  
Jae Sang Lee ◽  
Dong-Seok Kim ◽  
Sang Ho Lee ◽  
In Man Kang
Keyword(s):  
Quantum Well ◽  
Retention Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Random Access ◽  
Random Access Memory ◽  
The Body ◽  
Access Memory ◽  
Effect Transistor ◽  
Memory Applications

This paper presents a one-transistor dynamic random-access memory (1T-DRAM) cell based on a gate-all-around junction-less field-effect transistor (GAA-JLFET) with a Si/SiGe heterostructure for high-density memory applications. The proposed 1T-DRAM achieves the sensing margin using the difference in hole density in the body region between ‘1’ and ‘0’ states. The Si/SiGe heterostructure forms a quantum well in the body and reduces the band-to-band tunneling (BTBT) barrier between the body and drain. Compared with the performances of the 1T-DRAM with Si homo-structure, the proposed 1T-DRAM improves the sensing margin and retention time because its storage ability is enhanced by the quantum well. In addition, the thin BTBT barrier reduced the bias condition for the program operation. The proposed 1T-DRAM showed a high potential for memory applications by obtaining a high read current ratio at ‘1’ and ‘0’ states about 108 and a long retention time above 10 ms.

scholarly journals Reduced Carboxylate Graphene Oxide based Field Effect Transistor as Pb2+ Aptamer Sensor

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 388 ◽  
Author(s):  
Fang Li ◽  
Zhongrong Wang ◽  
Yunfang Jia
Keyword(s):  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Limit Of Detection ◽  
Binding Model ◽  
Nano Structure ◽  
Effect Transistor

Aptamer functionalized graphene field effect transistor (apta-GFET) is a versatile bio-sensing platform. However, the chemical inertness of graphene is still an obstacle for its large-scale applications and commercialization. In this work, reduced carboxyl-graphene oxide (rGO-COOH) is studied as a self-activated channel material in the screen-printed apta-GFETs for the first time. Examinations are carefully executed using lead-specific-aptamer as a proof-of-concept to demonstrate its functions in accommodating aptamer bio-probes and promoting the sensing reaction. The graphene-state, few-layer nano-structure, plenty of oxygen-containing groups and enhanced LSA immobilization of the rGO-COOH channel film are evidenced by X-ray photoelectron spectroscopy, Raman spectrum, UV-visible absorbance, atomic force microscopy and scanning electron microscope. Based on these characterizations, as well as a site-binding model based on solution-gated field effect transistor (SgFET) working principle, theoretical deductions for rGO-COOH enhanced apta-GFETs’ response are provided. Furthermore, detections for disturbing ions and real samples demonstrate the rGO-COOH channeled apta-GFET has a good specificity, a limit-of-detection of 0.001 ppb, and is in agreement with the conventional inductively coupled plasma mass spectrometry method. In conclusion, the careful examinations demonstrate rGO-COOH is a promising candidate as a self-activated channel material because of its merits of being independent of linking reagents, free from polymer residue and compatible with rapidly developed print-electronic technology.

scholarly journals Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor

2021 ◽  
pp. 2150161
Author(s):  
Behzad Rajabi ◽  
Mahdi Vadizadeh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Length ◽  
The Body ◽  
Threshold Region ◽  
Type I ◽  
Type Ii ◽  
Effect Transistor ◽  
Reasonable Choice ◽  
The Impact

Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb vertical heterojunctionless tunneling field effect transistor (VHJL-TFET) has been suggested to optimize the digital benchmarking parameters. In the proposed VHJL-TFET with type II heterostructure (i.e., [Formula: see text] and [Formula: see text]), slight changes in gate voltage cause switching from OFF-state to ON-state. As a result, the electrical properties of Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET are excellent in the sub-threshold region. The heterostructure with III–V semiconductors in the source-channel region increases the ON-state current ([Formula: see text]) of the VHJL-TFET. Comparing the results of Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET with the simulated devices with type I heterostructure (i.e., [Formula: see text] and [Formula: see text]) and type III heterostructure (i.e., [Formula: see text] and [Formula: see text]) shows the improvement by 26% and 15% in the average subthreshold slope (SS). Sensitivity analysis for VHJL-TFET with the type II heterostructure shows that the sensitivity of OFF-state current ([Formula: see text] to the body thickness ([Formula: see text] and doping concentration ([Formula: see text] is more than the sensitivity of the other main electrical parameters. The Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET with a channel length of 20 nm, [Formula: see text] nm, and [Formula: see text] cm[Formula: see text] showed the [Formula: see text] mV/dec, [Formula: see text]/[Formula: see text], and [Formula: see text] mA/um. As a result, Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET can be a reasonable choice for digital applications.

scholarly journals Recent Advances of Field-Effect Transistor Technology for Infectious Diseases

Biosensors ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 103
Author(s):  
Abbas Panahi ◽  
Deniz Sadighbayan ◽  
Saghi Forouhi ◽  
Ebrahim Ghafar-Zadeh
Keyword(s):  
Infectious Diseases ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Limit Of Detection ◽  
Point Of Care ◽  
High Sensitivity ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Label Free ◽  
Effect Transistor

Field-effect transistor (FET) biosensors have been intensively researched toward label-free biomolecule sensing for different disease screening applications. High sensitivity, incredible miniaturization capability, promising extremely low minimum limit of detection (LoD) at the molecular level, integration with complementary metal oxide semiconductor (CMOS) technology and last but not least label-free operation were amongst the predominant motives for highlighting these sensors in the biosensor community. Although there are various diseases targeted by FET sensors for detection, infectious diseases are still the most demanding sector that needs higher precision in detection and integration for the realization of the diagnosis at the point of care (PoC). The COVID-19 pandemic, nevertheless, was an example of the escalated situation in terms of worldwide desperate need for fast, specific and reliable home test PoC devices for the timely screening of huge numbers of people to restrict the disease from further spread. This need spawned a wave of innovative approaches for early detection of COVID-19 antibodies in human swab or blood amongst which the FET biosensing gained much more attention due to their extraordinary LoD down to femtomolar (fM) with the comparatively faster response time. As the FET sensors are promising novel PoC devices with application in early diagnosis of various diseases and especially infectious diseases, in this research, we have reviewed the recent progress on developing FET sensors for infectious diseases diagnosis accompanied with a thorough discussion on the structure of Chem/BioFET sensors and the readout circuitry for output signal processing. This approach would help engineers and biologists to gain enough knowledge to initiate their design for accelerated innovations in response to the need for more efficient management of infectious diseases like COVID-19.

scholarly journals Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1-XAs/GaYIn1-YSb vertical heterojunctionless tunneling field effect transistor

2021 ◽  
Author(s):  
Behzad Rajabi ◽  
Mahdi Vadizadeh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Length ◽  
The Body ◽  
Threshold Region ◽  
Type I ◽  
Type Ii ◽  
Effect Transistor ◽  
Reasonable Choice ◽  
The Impact

Abstract GaXIn1-XAs/GaYIn1-YSb vertical heterojunctionless tunneling field effect transistor (VHJL-TFET) has been suggested to optimize the digital benchmarking parameters. In the proposed VHJL-TFET with type II heterostructure (i.e. X=0.8, Y=0.85), slight changes in gate voltage cause switching from OFF-state to ON-state. As a result, the electrical properties of Ga0.8In0.2As/Ga0.85In0.15Sb VHJL-TFET are excellent in the sub-threshold region. The heterostructure with III-V semiconductors in the source-channel region increases the ON-state current (ION (of the VHJL-TFET. Comparing the results of Ga0.8In0.2As/Ga0.85In0.15Sb VHJL-TFET with the simulated devices with type I heterostructure (i.e. X=0.9, Y=0.1) and type III heterostructure (i.e. X=0.1, Y=0.4) shows the improvement by 26% and 15% in the average subthreshold slope (SS). Sensitivity analysis for VHJL-TFET with the type II heterostructure shows that the sensitivity of OFF-state current (IOFF) to the body thickness (Tb) and doping concentration (ND) is more than the sensitivity of the other main electrical parameters. The Ga0.8In0.2As/Ga0.85In0.15Sb VHJL-TFET with a channel length of 20 nm, Tb=5 nm, and ND=1×1018cm-3 showed the SS=4.4mV/dec, ION/IOFF=4E14, and ION=8mA/um. As a result, Ga0.8In0.2As/Ga0.85In0.15Sb VHJL-TFET can be a reasonable choice for digital applications.

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