scholarly journals Recent Advances of Field-Effect Transistor Technology for Infectious Diseases

Biosensors ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 103
Author(s):  
Abbas Panahi ◽  
Deniz Sadighbayan ◽  
Saghi Forouhi ◽  
Ebrahim Ghafar-Zadeh
Keyword(s):  
Infectious Diseases ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Limit Of Detection ◽  
Point Of Care ◽  
High Sensitivity ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Label Free ◽  
Effect Transistor

Field-effect transistor (FET) biosensors have been intensively researched toward label-free biomolecule sensing for different disease screening applications. High sensitivity, incredible miniaturization capability, promising extremely low minimum limit of detection (LoD) at the molecular level, integration with complementary metal oxide semiconductor (CMOS) technology and last but not least label-free operation were amongst the predominant motives for highlighting these sensors in the biosensor community. Although there are various diseases targeted by FET sensors for detection, infectious diseases are still the most demanding sector that needs higher precision in detection and integration for the realization of the diagnosis at the point of care (PoC). The COVID-19 pandemic, nevertheless, was an example of the escalated situation in terms of worldwide desperate need for fast, specific and reliable home test PoC devices for the timely screening of huge numbers of people to restrict the disease from further spread. This need spawned a wave of innovative approaches for early detection of COVID-19 antibodies in human swab or blood amongst which the FET biosensing gained much more attention due to their extraordinary LoD down to femtomolar (fM) with the comparatively faster response time. As the FET sensors are promising novel PoC devices with application in early diagnosis of various diseases and especially infectious diseases, in this research, we have reviewed the recent progress on developing FET sensors for infectious diseases diagnosis accompanied with a thorough discussion on the structure of Chem/BioFET sensors and the readout circuitry for output signal processing. This approach would help engineers and biologists to gain enough knowledge to initiate their design for accelerated innovations in response to the need for more efficient management of infectious diseases like COVID-19.

Ultrasensitive WSe2 field-effect transistor-based biosensor for label-free detection of cancer in point-of-care applications

2D Materials ◽  
2021 ◽  
Author(s):  
Mohammad Mosarof Hossain ◽  
Babar Shabbir ◽  
Yingjie Wu ◽  
Wenzhi Yu ◽  
Vaishnavi Krishnamurthi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Point Of Care ◽  
Label Free ◽  
Label Free Detection ◽  
Effect Transistor

scholarly journals CMOS-Based Physically Unclonable Functions: A Review and Tutorial

2021 ◽  
Author(s):  
Kamal Y. Kamal ◽  
Radu Muresan ◽  
Arafat Al-Dweik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Physically Unclonable Functions ◽  
Effect Transistor

<p>This article reviews complementary metal-oxide-semiconductor (CMOS) based physically unclonable functions (PUFs) in terms of types, structures, metrics, and challenges. The article reviews and classifies the most basic PUF types. The article reviews the basic variations originated during a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process. Random <a>variations</a> at transistor level lead to acquiring unique properties for electronic chips. These variations help a PUF system to generate a unique response. This article discusses various concepts which allow for more variations at CMOS technology, layout, masking, and design levels. It also discusses various PUF related topics.</p>

scholarly journals Design and Development of Graphene FET Biosensor for the Detection of SARS-CoV-2

2021 ◽  
Author(s):  
B. Vamsi Krsihna ◽  
Shaik Ahmadsaidulu ◽  
Surapaneni Sai Tarun Teja ◽  
D Jayanthi ◽  
Alluri Navaneetha ◽  
...  
Keyword(s):  
Field Effect Transistor ◽  
Limit Of Detection ◽  
Point Of Care ◽  
Drain Current ◽  
Label Free ◽  
Reduced Graphene ◽  
The World ◽  
Progressive Respiratory Failure ◽  
Effect Transistor ◽  
Graphene Fet

Abstract The most affected disease in recent years is Severe Acute Respiratory Syndrome Coronavirus 2 (SARS-COV-2) that is notable as COVID-19. It has been started as a disease in one place and arisen as a pandemic throughout the world. A serious health problem is developed in the lungs due to the effect of this coronavirus. Sometimes it may result in death as a consequence of extensive alveolar damage and progressive respiratory failure. Hence, early detection and appropriate diagnosis of corona virus in patient’s body is very essential to save the lives of affected patients This work evolves a Silicon (Si) based label-free electrical device i.e. the reduced graphene oxide field-effect transistor (rGO FET) for SARS-CoV-2 detection. Firstly rGO FET functionalized with SARS-CoV-2 monoclonal antibodies (mAbs). Then the rGO FET characteristic response is observed to detect the antibody-antigen reaction of SARS-CoV-2 with different molar ranges. The developed GFET shows better performance towards the drain current and limit-of-detection (LoD) up to 2E-18 M. Therefore, we believe that an intense response was observed than the earlier developed devices and signifies impressive capability for subsequent implementation in point-of-care (PoC) diagnostic tests.

scholarly journals CMOS-Based Physically Unclonable Functions: A Review and Tutorial

2021 ◽  
Author(s):  
Kamal Y. Kamal ◽  
Radu Muresan ◽  
Arafat Al-Dweik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Physically Unclonable Functions ◽  
Effect Transistor

<p>This article reviews complementary metal-oxide-semiconductor (CMOS) based physically unclonable functions (PUFs) in terms of types, structures, metrics, and challenges. The article reviews and classifies the most basic PUF types. The article reviews the basic variations originated during a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process. Random <a>variations</a> at transistor level lead to acquiring unique properties for electronic chips. These variations help a PUF system to generate a unique response. This article discusses various concepts which allow for more variations at CMOS technology, layout, masking, and design levels. It also discusses various PUF related topics.</p>

scholarly journals Review of Nanosheet Transistors Technology

2021 ◽  
Vol 28 (1) ◽  
pp. 40-48
Author(s):  
Firas Agha ◽  
Yasir Naif ◽  
Mohammed Shakib
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Nano Structure ◽  
New Device ◽  
Technology Node ◽  
Structure Of Metal ◽  
Effect Transistor

Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a review of this new nano-structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), this new device that consists of a metal gate material. Lateral nano-sheet FET is now targeting for 3nm Complementary MOS (CMOS) technology node. In this review, the structure and characteristics of Nano-Sheet FET (NSFET), FinFET and NanoWire FET (NWFET) under 5nm technology node are presented and compared. According to the comparison, the NSFET shows to be more impregnable to mismatch in ON current than NWFET. Furthermore, as comparing with other nanodimensional transistors, the NSFET has the superior control of gate all-around structures, also the NWFET realize lower mismatch in sub threshold slope (SS) and drain induced barrier lowering (DIBL).

High Stable and Low Power 8T CNTFET SRAM Cell

2019 ◽  
Vol 29 (05) ◽  
pp. 2050080
Author(s):  
M. Elangovan ◽  
K. Gunavathi
Keyword(s):  
Metal Oxide ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Vlsi Circuits ◽  
Oxide Semiconductor ◽  
Sram Cell ◽  
Effect Transistor

Designing of Complementary Metal Oxide Semiconductor (CMOS) technology based VLSI circuits in deep submicron range includes many challenges like tremendous increase of leakage power. Design is also easily affected by process variation. The Carbon NanoTube Field Effect Transistor (CNTFET) is an alternative for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for nanoscale range VLSI circuits design. CNTFET offers best performance than MOSFET. It has high stability and consumes least power. Static Random Access Memory (SRAM) cells play a vital role in cache memory in most of the electronic circuits. In this paper, we have proposed a high stable and low power CNTFET based 8Transistor (8T) SRAM cell. The performance of proposed 8T SRAM cells for nominal chiral value (all CNTFET with [Formula: see text], [Formula: see text]) and Dual chiral value (NCNTFET with [Formula: see text], [Formula: see text] and PCNTFET [Formula: see text], [Formula: see text]) is compared with that of conventional 6T and 8T cells. From the simulation results, it is noted that the proposed structure consumes less power than conventional 6T and 8T cells during read/write operations and gives higher stability during write and hold modes. It consumes higher power than conventional 6T and 8T cells during hold mode and provides lower stability in read mode due to direct contact of bit lines with storage nodes. A comparative analysis of proposed and conventional 8T MOSFET SRAM has been done and the SRAM parameters are tabulated. The simulation is carried out using Stanford University 32[Formula: see text]nm CNTFET model in HSPICE simulation tool.

scholarly journals Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor

2013 ◽  
Vol 40 (1) ◽  
pp. 141-146 ◽  
Author(s):  
G. Wenga ◽  
E. Jacques ◽  
A-C. Salaün ◽  
R. Rogel ◽  
L. Pichon ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Cmos Technology ◽  
Dna Biosensor ◽  
Label Free ◽  
Free Dna ◽  
Effect Transistor

Applications of Field Effect Transistor Biosensors Integrated in Microfluidic Chips

2020 ◽  
Vol 12 (4) ◽  
pp. 427-445
Author(s):  
Lemeng Chao ◽  
Huanhuan Shi ◽  
Kaixuan Nie ◽  
Bo Dong ◽  
Jiafeng Ding ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Sensitivity ◽  
Cell Detection ◽  
Microfluidic Chips ◽  
Label Free ◽  
Gene Detection ◽  
Nano Technology ◽  
Effect Transistor ◽  
And Performance

With the progress of micro-nano technology, the integration of microfluidic technology with a field effect transistor (FET) sensor has made portable biosensing devices of miniaturized structure available. As compared to traditional biosensors that requires large equipment and anti-interfering detection, FET biosensors integrated in microfluidic chips are fully-closed devices with the advantages of high sensitivity and accurate target capturing. Meanwhile FET biosensors integrated in microfluidic chips can be prepared by a simple, batch-produced manufacturing process to achieve label-free electrical detection. Herein, the progress of the FET biosensors integrated in microfluidic chips is reviewed in terms of sensing principle, configuration, and performance. Especially, the applications of these integrated biosensors in the areas of cell detection, gene detection, biomacromolecule detection, ion detection and pH detection are highlighted. This review provides a certain guiding role in the design and development of FET-based biosensors.

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