scholarly journals Reduced Carboxylate Graphene Oxide based Field Effect Transistor as Pb2+ Aptamer Sensor

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 388 ◽  
Author(s):  
Fang Li ◽  
Zhongrong Wang ◽  
Yunfang Jia
Keyword(s):  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Limit Of Detection ◽  
Binding Model ◽  
Nano Structure ◽  
Effect Transistor

Aptamer functionalized graphene field effect transistor (apta-GFET) is a versatile bio-sensing platform. However, the chemical inertness of graphene is still an obstacle for its large-scale applications and commercialization. In this work, reduced carboxyl-graphene oxide (rGO-COOH) is studied as a self-activated channel material in the screen-printed apta-GFETs for the first time. Examinations are carefully executed using lead-specific-aptamer as a proof-of-concept to demonstrate its functions in accommodating aptamer bio-probes and promoting the sensing reaction. The graphene-state, few-layer nano-structure, plenty of oxygen-containing groups and enhanced LSA immobilization of the rGO-COOH channel film are evidenced by X-ray photoelectron spectroscopy, Raman spectrum, UV-visible absorbance, atomic force microscopy and scanning electron microscope. Based on these characterizations, as well as a site-binding model based on solution-gated field effect transistor (SgFET) working principle, theoretical deductions for rGO-COOH enhanced apta-GFETs’ response are provided. Furthermore, detections for disturbing ions and real samples demonstrate the rGO-COOH channeled apta-GFET has a good specificity, a limit-of-detection of 0.001 ppb, and is in agreement with the conventional inductively coupled plasma mass spectrometry method. In conclusion, the careful examinations demonstrate rGO-COOH is a promising candidate as a self-activated channel material because of its merits of being independent of linking reagents, free from polymer residue and compatible with rapidly developed print-electronic technology.

scholarly journals Function of Tetra (4-Aminophenyl) Porphyrin in Altering the Electronic Performances of Reduced Graphene Oxide-Based Field Effect Transistor

Molecules ◽  
2019 ◽  
Vol 24 (21) ◽  
pp. 3960
Author(s):  
Shihui Hu ◽  
Yunfang Jia
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Transfer Characteristic ◽  
Experimental Conditions ◽  
Reduced Graphene ◽  
Graphene Derivatives ◽  
Effect Transistor

Porphyrin functionalized reduced graphene oxide (rGO) is attractive for multi-disciplinary research studies, and its improvements for an rGO-based field effect transistor (rGO-FET) were exploited to realize ultrasensitive biochemical and clinical assay. Although it was believed that the hybrids of porphyrin and rGO can make positive impacts on the rGO-FET’s electronic performances, the understandings of its functions are still piecemeal. Herein, the reduced mixtures of tetra (4-aminophenyl) porphyrin (TAP), GO (TAP-rGO), and the FET channeled by them are examined to throw a light on the possible approaches through which TAP affects rGO’s quality and its carrier mobilities. A TAP-caused game relationship is established by deliberating about the results of the intentionally altered experimental conditions, including TAP contents and the overmixing pretreatment. The p-type doping deduction for the right-shifted ambipolar transfer characteristic curves is evidenced by X-ray photoelectron spectroscopy (XPS). The problems posed by the TAP-induced FET features’ improvement, regression, and deterioration are clarified by the integrated proofs from Raman fingerprints, the amide and carboxyl groups’ changing trajectory found by C1s XPS core spectra, and the enlarged few-layer graphene morphology from atomic force microscope and transmission electron microscope. We hope that this effort will provide some constructive recommendations for producing low-cost graphene derivatives and promoting their applications in FET-like electronic components.

Ultrasensitive detection of orthophosphate ions with reduced graphene oxide/ferritin field-effect transistor sensors

2017 ◽  
Vol 4 (4) ◽  
pp. 856-863 ◽  
Author(s):  
Shun Mao ◽  
Haihui Pu ◽  
Jingbo Chang ◽  
Xiaoyu Sui ◽  
Guihua Zhou ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ultrasensitive Detection ◽  
Phosphorus Level ◽  
Reduced Graphene ◽  
Effect Transistor ◽  
Increasing Demand ◽  
Water Eutrophication ◽  
Phosphorus Determination

The phosphorus level is one of the major parameters in evaluating water eutrophication and there is an increasing demand for accurate and real-time monitoring technology for phosphorus determination.

scholarly journals Полевой транзистор на протонной проводимости пленок оксида графена и нафиона

2018 ◽  
Vol 52 (3) ◽  
pp. 370
Author(s):  
В.А. Смирнов ◽  
А.Д. Мокрушин ◽  
Н.Н. Денисов ◽  
Ю.А. Добровольский
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ion Current ◽  
Negative Ion ◽  
Current Gain ◽  
Positive Bias ◽  
Electrical Characteristics ◽  
Proton Current ◽  
Effect Transistor

AbstractProton conductivity in graphene oxide and Nafion films depending on humidity and voltages across electrodes is studied in the model of a field-effect transistor. The electrical characteristics of the films are similar to one another, but the mobility of positive charges in Nafion and the current gain are higher by 2–3 orders of magnitude compared with graphene oxide. The negative ion current in graphene-oxide films at positive bias voltage is significant compared with the proton current (up to ~10%), while it is almost lacking in Nafion films (<1%).

scholarly journals Ultrasensitive and Highly Selective Graphene-Based Field-Effect Transistor Biosensor for Anti-Diuretic Hormone Detection

Sensors ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 2642 ◽  
Author(s):  
Reena Sri Selvarajan ◽  
Ruslinda A. Rahim ◽  
Burhanuddin Yeop Majlis ◽  
Subash C. B. Gopinath ◽  
Azrul Azlan Hamzah
Keyword(s):  
Human Serum ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Limit Of Detection ◽  
The Body ◽  
Artificial Kidney ◽  
Diuretic Hormone ◽  
Effect Transistor ◽  
Surface Modified ◽  
Relative Change

Nephrogenic diabetes insipidus (NDI), which can be congenital or acquired, results from the failure of the kidney to respond to the anti-diuretic hormone (ADH). This will lead to excessive water loss from the body in the form of urine. The kidney, therefore, has a crucial role in maintaining water balance and it is vital to restore this function in an artificial kidney. Herein, an ultrasensitive and highly selective aptameric graphene-based field-effect transistor (GFET) sensor for ADH detection was developed by directly immobilizing ADH-specific aptamer on a surface-modified suspended graphene channel. This direct immobilization of aptamer on the graphene surface is an attempt to mimic the functionality of collecting tube V 2 receptors in the ADH biosensor. This aptamer was then used as a probe to capture ADH peptide at the sensing area which leads to changes in the concentration of charge carriers in the graphene channel. The biosensor shows a significant increment in the relative change of current ratio from 5.76 to 22.60 with the increase of ADH concentration ranging from 10 ag/mL to 1 pg/mL. The ADH biosensor thus exhibits a sensitivity of 50.00 µA· ( g / mL ) − 1 with a limit of detection as low as 3.55 ag/mL. In specificity analysis, the ADH biosensor demonstrated a higher current value which is 338.64 µA for ADH-spiked in phosphate-buffered saline (PBS) and 557.89 µA for ADH-spiked in human serum in comparison with other biomolecules tested. This experimental evidence shows that the ADH biosensor is ultrasensitive and highly selective towards ADH in PBS buffer and ADH-spiked in human serum.

Microvesicle detection by a reduced graphene oxide field-effect transistor biosensor based on a membrane biotinylation strategy

The Analyst ◽  
2019 ◽  
Vol 144 (20) ◽  
pp. 6055-6063 ◽  
Author(s):  
Ding Wu ◽  
Hong Zhang ◽  
Dan Jin ◽  
Yi Yu ◽  
Dai-Wen Pang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Reduced Graphene ◽  
Effect Transistor

A reduced graphene oxide field-effect transistor biosensor for the detection of microvesicles by using a membrane biotinylation strategy.

scholarly journals The Effect of Aptamer Concetration towards Reduced Graphene Oxide-Field Effect Transistor Surface Channel for Biosensor Application

2018 ◽  
Vol 318 ◽  
pp. 012045 ◽  
Author(s):  
Azrul Syafiq Zainol Abidin ◽  
Ruslinda Abdul Rahim ◽  
Chow Yong Huan ◽  
Nur Nasyifa Mohd Maidin ◽  
Nurul Atiqah Ahmad ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Reduced Graphene ◽  
Biosensor Application ◽  
Effect Transistor

scholarly journals High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

2019 ◽  
Vol 115 (1) ◽  
pp. 012104 ◽  
Author(s):  
Dongjea Seo ◽  
Dong Yun Lee ◽  
Junyoung Kwon ◽  
Jea Jung Lee ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
High Performance ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Monolayer Mos2 ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene ◽  
Effect Transistor

scholarly journals Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1753 ◽  
Author(s):  
Nikita Nekrasov ◽  
Dmitry Kireev ◽  
Nejra Omerović ◽  
Aleksei Emelianov ◽  
Ivan Bobrinetskiy
Keyword(s):  
Inkjet Printing ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Organic Molecules ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Effect Transistor ◽  
Organic Semiconducting Molecules

In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic device fabrication and lowering the device’s cost. The altering of the functionalization of graphene was performed through local inkjet printing of N,N′-Dihexyl-3,4,9,10-perylenedicarboximide (PDI-C6) semiconducting molecules’ ink. We demonstrated the high resolution (about 50 µm) and accurate printing of organic ink on bare chemical vapor deposited (CVD) graphene. PDI-C6 forms nanocrystals onto the graphene’s surface and transfers charges via π–π stacking to graphene. While the doping from organic molecules was compensated by oxygen molecules under normal conditions, we demonstrated the photoinduced current generation at the PDI-C6/graphene junction with ambient light, a 470 nm diode, and 532 nm laser sources. The local (in the scale of 1 µm) photoresponse of 0.5 A/W was demonstrated at a low laser power density. The methods we developed open the way for local functionalization of an on-chip array of graphene by inkjet printing of different semiconducting organic molecules for photonics and electronics.

Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide

2017 ◽  
Vol 2 (24) ◽  
pp. 6941-6944 ◽  
Author(s):  
Hiroshi Takehira ◽  
Md. Saidul Islam ◽  
Mohammad Razaul Karim ◽  
Yuta Shudo ◽  
Ryo Ohtani ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Reduced Graphene ◽  
Effect Transistor
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