scholarly journals Electrohydrodynamic-Jet (EHD)-Printed Diketopyrrolopyroole-Based Copolymer for OFETs and Circuit Applications

Polymers ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 1759 ◽  
Author(s):  
Kyunghun Kim ◽  
Se Hyun Kim ◽  
Hyungjin Cheon ◽  
Xiaowu Tang ◽  
Jeong Hyun Oh ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Circuit ◽  
Ring Oscillator ◽  
Organic Field Effect Transistors ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Supply Condition

We report the employment of an electrohydrodynamic-jet (EHD)-printed diketopyrrolopyrrole-based copolymer (P-29-DPPDTSE) as the active layer of fabricated organic field-effect transistors (OFETs) and circuits. The device produced at optimal conditions showed a field-effect mobility value of 0.45 cm2/(Vs). The morphologies of the printed P-29-DPPDTSE samples were determined by performing optical microscopy, X-ray diffraction, and atomic force microscopy experiments. In addition, numerical circuit simulations of the optimal printed P-29-DPPDTSE OFETs were done in order to observe how well they would perform in a high-voltage logic circuit application. The optimal printed P-29-DPPDTSE OFET showed a 0.5 kHz inverter frequency and 1.2 kHz ring oscillator frequency at a 40 V supply condition, indicating the feasibility of its use in a logic circuit application at high voltage.

scholarly journals Polyimide Dielectric Layer on Filaments for Organic Field Effect Transistors: Choice of Solvent, Solution Composition and Dip-Coating Speed

2014 ◽  
Vol 14 (3) ◽  
pp. 121-134 ◽  
Author(s):  
Lina Rambausek ◽  
Els Bruneel ◽  
Gilbert De Mey ◽  
Lieva Van Langenhove
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dip Coating ◽  
Organic Field Effect Transistors ◽  
Force Microscopy ◽  
Layered Architecture ◽  
Atomic Force ◽  
Production Techniques

Abstract In today’s research, smart textiles is an established topic in both electronics and the textile fields. The concept of producing microelectronics directly on a textile substrate is not a mere idea anymore and several research institutes are working on its realisation. Microelectronics like organic field effect transistor (OFET) can be manufactured with a layered architecture. The production techniques used for this purpose can also be applied on textile substrates. Besides gate, active and contact layers, the isolating or dielectric layer is of high importance in the OFET architecture. Therefore, generating a high quality dielectric layer that is of low roughness and insulating at the same time is one of the fundamental requirements in building microelectronics on textile surfaces. To evaluate its potential, we have studied polyimide as a dielectric layer, dip-coated onto copper-coated polyester filaments. Accordingly, the copper-coated polyester filament was dip-coated from a polyimide solution with two different solvents, 1-methyl-2-pyrrolidone (NMP) and dimethylformaldehyde. A variety of dip-coating speeds, solution concentrations and solvent-solute combinations have been tested. Their effect on the quality of the layer was analysed through microscopy, leak current measurements and atomic force microscopy (AFM). Polyimide dip-coating with polyimide resin dissolved in NMP at a concentration of 15w% in combination with a dip-coating speed of 50 mm/min led to the best results in electrical insulation and roughness. By optimising the dielectric layer’s properties, the way is paved for applying the subsequent semi-conductive layer. In further research, we will be working with the organic semiconductor material TIPS-Pentacene

Morphology and Field-Effect Mobility Characterization of Planar Five-Ring-Fused Dithiophene-Dione

2013 ◽  
Vol 331 ◽  
pp. 452-455 ◽  
Author(s):  
Jing Wang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Layer By Layer ◽  
Organic Field Effect Transistors ◽  
Field Effect Mobility ◽  
X Ray Diffraction ◽  
Vapor Growth ◽  
Face To Face ◽  
Atomic Force ◽  
Substrate Temperatures

The thin films of compound 2,7-dihexyl-4,9-dihydro-s-indaceno [1,2-b:5,6-b']- dithiophene-4,9-dione were grown by physical vapor growth at different substrate temperatures. The morphology of surfaces was characterized by atomic force microscope and X-ray diffraction, which exhibits increased crystal grain size and film order with the increase of substrate temperature. The molecule exhibits layer-by-layer packing on the Si/SiO2 substrate and the tilt angle with respect to the substrate is 49.5°, which form extended slipped face-to-face π-stacking in each layer. This result indicates that molecular packing in the thin film is similar to that in the single crystal. The organic field-effect transistors (OFETs) incorporating this compound shows a field effect mobility at the order of 10-3 cm2V-1s-1 and an on-off ratio of 4 × 106 with good air-stability.

Molecularly clean ionic liquid/rubrene single-crystal interfaces revealed by frequency modulation atomic force microscopy

2015 ◽  
Vol 17 (10) ◽  
pp. 6794-6800 ◽  
Author(s):  
Yasuyuki Yokota ◽  
Hisaya Hara ◽  
Yusuke Morino ◽  
Ken-ichi Bando ◽  
Akihito Imanishi ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Ionic Liquid ◽  
Single Crystal ◽  
Frequency Modulation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Force Microscopy ◽  
Atomic Force ◽  
Clean Interface ◽  
Crystal Interfaces

Frequency modulation atomic force microscopy was employed to show a molecularly clean interface between an ionic liquid and a rubrene single crystal for possible applications to electric double-layer field-effect transistors.

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