scholarly journals Back Cover: Identification of grain boundaries as degradation site in n-channel organic field-effect transistors determined via conductive atomic force microscopy (Phys. Status Solidi RRL 4/2016)

2016 ◽  
Vol 10 (4) ◽  
Author(s):  
Sebastian Müller ◽  
Roelf-Peter Baumann ◽  
Thomas Geßner ◽  
R. Thomas Weitz
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Boundaries ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Back Cover ◽  
Atomic Force

scholarly journals A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

RSC Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 3336-3342 ◽  
Author(s):  
Marc Courté ◽  
Sandeep G. Surya ◽  
Ramesh Thamankar ◽  
Chao Shen ◽  
V. Ramgopal Rao ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Memory Effect ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Resistive Memory ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor

A non-volatile resistive memory effect is observed in 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, in a field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM).

scholarly journals Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

RSC Advances ◽  
2017 ◽  
Vol 7 (16) ◽  
pp. 9772-9772
Author(s):  
Marc Courté ◽  
Sandeep G. Surya ◽  
Ramesh Thamankar ◽  
Chao Shen ◽  
V. Ramgopal Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Memory Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Resistive Memory ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Correction for ‘A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy’ by Marc Courté et al., RSC Adv., 2017, 7, 3336–3342.

Molecularly clean ionic liquid/rubrene single-crystal interfaces revealed by frequency modulation atomic force microscopy

2015 ◽  
Vol 17 (10) ◽  
pp. 6794-6800 ◽  
Author(s):  
Yasuyuki Yokota ◽  
Hisaya Hara ◽  
Yusuke Morino ◽  
Ken-ichi Bando ◽  
Akihito Imanishi ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Ionic Liquid ◽  
Single Crystal ◽  
Frequency Modulation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Force Microscopy ◽  
Atomic Force ◽  
Clean Interface ◽  
Crystal Interfaces

Frequency modulation atomic force microscopy was employed to show a molecularly clean interface between an ionic liquid and a rubrene single crystal for possible applications to electric double-layer field-effect transistors.

Effects of channel-length scaling on In2O3 nanowire field effect transistors studied by conducting atomic force microscopy

2007 ◽  
Vol 90 (17) ◽  
pp. 173106 ◽  
Author(s):  
Gunho Jo ◽  
Jongsun Maeng ◽  
Tae-Wook Kim ◽  
Woong-Ki Hong ◽  
Minseok Jo ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Force Microscopy ◽  
Atomic Force ◽  
Length Scaling

scholarly journals Polyimide Dielectric Layer on Filaments for Organic Field Effect Transistors: Choice of Solvent, Solution Composition and Dip-Coating Speed

2014 ◽  
Vol 14 (3) ◽  
pp. 121-134 ◽  
Author(s):  
Lina Rambausek ◽  
Els Bruneel ◽  
Gilbert De Mey ◽  
Lieva Van Langenhove
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dip Coating ◽  
Organic Field Effect Transistors ◽  
Force Microscopy ◽  
Layered Architecture ◽  
Atomic Force ◽  
Production Techniques

Abstract In today’s research, smart textiles is an established topic in both electronics and the textile fields. The concept of producing microelectronics directly on a textile substrate is not a mere idea anymore and several research institutes are working on its realisation. Microelectronics like organic field effect transistor (OFET) can be manufactured with a layered architecture. The production techniques used for this purpose can also be applied on textile substrates. Besides gate, active and contact layers, the isolating or dielectric layer is of high importance in the OFET architecture. Therefore, generating a high quality dielectric layer that is of low roughness and insulating at the same time is one of the fundamental requirements in building microelectronics on textile surfaces. To evaluate its potential, we have studied polyimide as a dielectric layer, dip-coated onto copper-coated polyester filaments. Accordingly, the copper-coated polyester filament was dip-coated from a polyimide solution with two different solvents, 1-methyl-2-pyrrolidone (NMP) and dimethylformaldehyde. A variety of dip-coating speeds, solution concentrations and solvent-solute combinations have been tested. Their effect on the quality of the layer was analysed through microscopy, leak current measurements and atomic force microscopy (AFM). Polyimide dip-coating with polyimide resin dissolved in NMP at a concentration of 15w% in combination with a dip-coating speed of 50 mm/min led to the best results in electrical insulation and roughness. By optimising the dielectric layer’s properties, the way is paved for applying the subsequent semi-conductive layer. In further research, we will be working with the organic semiconductor material TIPS-Pentacene

scholarly journals Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 803 ◽  
Author(s):  
Filippo Giannazzo ◽  
Emanuela Schilirò ◽  
Giuseppe Greco ◽  
Fabrizio Roccaforte
Keyword(s):  
Atomic Force Microscopy ◽  
Transition Metal ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Transition Metal Dichalcogenides ◽  
Device Fabrication ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Dichalcogenides

Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boundaries, etc.), which are intrinsic of these materials or introduced during device fabrication processes. This paper reviews recent applications of conductive atomic force microscopy (C-AFM) to the investigation of nanoscale transport properties in TMDs, discussing the implications of the local phenomena in the overall behavior of TMD-based devices. Nanoscale resolution current spectroscopy and mapping by C-AFM provided information on the Schottky barrier uniformity and shed light on the mechanisms responsible for the Fermi level pinning commonly observed at metal/TMD interfaces. Methods for nanoscale tailoring of the Schottky barrier in MoS2 for the realization of ambipolar transistors are also illustrated. Experiments on local conductivity mapping in monolayer MoS2 grown by chemical vapor deposition (CVD) on SiO2 substrates are discussed, providing a direct evidence of the resistance associated to the grain boundaries (GBs) between MoS2 domains. Finally, C-AFM provided an insight into the current transport phenomena in TMD-based heterostructures, including lateral heterojunctions observed within MoxW1–xSe2 alloys, and vertical heterostructures made by van der Waals stacking of different TMDs (e.g., MoS2/WSe2) or by CVD growth of TMDs on bulk semiconductors.

Conductive Atomic Force Microscopy and Scanning Impedance Microscopy for the Imaging of Electrical Domain in CaCu3Ti4O12 Perovskite Oxide

2009 ◽  
Vol 1232 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
Vito Raineri
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Boundaries ◽  
Electrical Characterization ◽  
Scanning Probe ◽  
Perovskite Oxide ◽  
Electrical Characteristics ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

AbstractElectrical characterization of CaCu3Ti4O12 (CCTO) ceramics with scanning probe based techniques has been carried out. In particular, conductive atomic force microscopy (C-AFM) and scanning impedance microscopy (SIM) have been used to demonstrate the presence, shape and size in CCTO ceramics of the different electrically domains, both at the grain boundaries and within the grains. The electrical characteristics of single grains and of single domains have been evaluated and it has been observed that the conductive grains are surrounded by insulating grain boundaries.

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