scholarly journals Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

Micromachines ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 53 ◽  
Author(s):  
Kyu-Won Jang ◽  
In-Tae Hwang ◽  
Hyun-Jung Kim ◽  
Sang-Heung Lee ◽  
Jong-Won Lim ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Electron Mobility ◽  
Heat Dissipation ◽  
Lattice Temperature ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Dc Characteristics ◽  
Thermal Structures ◽  
Operational Characteristics

In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT.

scholarly journals Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection

2018 ◽  
Vol 58 (2) ◽  
Author(s):  
Vytautas Jakštas ◽  
Justinas Jorudas ◽  
Vytautas Janonis ◽  
Linas Minkevičius ◽  
Irmantas Kašalynas ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Steady Current ◽  
Improved Performance

This paper reports on the AlGaN/GaN Schottky diodes (SDs) and high-electron-mobility transistors (HEMTs) grown on a semi-insulating SiC substrate. The electronic devices demonstrate an improved performance in comparison with the ones processed on a sapphire substrate. Both the SDs and HEMTs show much smaller leakage current density and a higher ION/IOFF ratio, reaching values down to 3.0±1.2 mA/cm2 and up to 70 dB under the reverse electric field of 340 kV/cm, respectively. The higher thermal conductivity of the SiC substrate leads to the increase of steady current and transconductance, and better thermal management of the HEMT devices. In addition, a successful detection of terahertz (THz) waves with the AlGaN/GaN HEMT is demonstrated at room temperature. These results open further routes for the optimization of THz designs which may result in development of novel plasmonic THz devices.

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene

2018 ◽  
Vol 18 (11) ◽  
pp. 7578-7583
Author(s):  
Guobin Zhang ◽  
Miao Zhao ◽  
Chunli Yan ◽  
Bing Sun ◽  
Zonggang Wu ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants

2019 ◽  
Vol 11 (31) ◽  
pp. 3981-3986 ◽  
Author(s):  
Lei Zhao ◽  
Xinsheng Liu ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Real Time Detection

In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.

Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate

2011 ◽  
Vol 694 ◽  
pp. 891-895
Author(s):  
Chien Chang Huang ◽  
Chun Chia Chen ◽  
Jian Kai Liou ◽  
Po Cheng Chou ◽  
Huey Ing Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Thermal Evaporation ◽  
Low Cost ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Electron Microscopic ◽  
High Electron Mobility ◽  
Dc Characteristics ◽  
Scanning Electron Microscopic ◽  
Easy Operation

An interesting GaAs based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated (EP) surface treated gate is fabricated and studied. Based on the low-temperature and low-energy deposition conditions, the EP approach can form better metal-semiconductor (M-S) interface with the reduction in surface thermal damages and disordered-states. The material analyses of EP approach, including Auger electron spectroscopy (AES) and scanning electron microscopic (SEM), are examined. The DC performance of EP-gate device is investigated. In addition, the temperature influences of the studied devices, at the temperature region of 300 to 500K, are studied. As compared with the conventional thermal evaporation (TE) approach, the EP-based device shows significantly improved DC characteristics over a wide temperature range (300-500K). Moreover, the EP approach also has advantages of easy operation and low cost.

scholarly journals Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55835-55838 ◽  
Author(s):  
Xiangzhen Ding ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Baojun Wu ◽  
Yimin Hu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Sensitive

An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.

scholarly journals Highly sensitive AlGaN/GaN HEMT biosensors using an ethanolamine modification strategy for bioassay applications

RSC Advances ◽  
2019 ◽  
Vol 9 (27) ◽  
pp. 15341-15349 ◽  
Author(s):  
Zhiqi Gu ◽  
Jin Wang ◽  
Bin Miao ◽  
Lei Zhao ◽  
Xinsheng Liu ◽  
...  
Keyword(s):  
Surface Modification ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Efficient ◽  
Highly Sensitive ◽  
Amine Groups

We propose a highly efficient surface modification strategy on an AlGaN/GaN high electron mobility transistor, where ethanolamine was utilized to functionalize the surface of GaN and provided amphoteric amine groups for bioassay application.

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