Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation

Chien-Fong Lo; L. Liu; T. S. Kang; Fan Ren; C. Schwarz; E. Flitsiyan; L. Chernyak; Hong-Yeol Kim; Jihyun Kim; Sang Pil Yun; O. Laboutin; Y. Cao; J. W. Johnson; S. J. Pearton

doi:10.1116/1.3698402

Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3698402 ◽

2012 ◽

Vol 30 (3) ◽

pp. 031202 ◽

Cited By ~ 5

Author(s):

Chien-Fong Lo ◽

L. Liu ◽

T. S. Kang ◽

Fan Ren ◽

C. Schwarz ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dc Characteristics

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Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4866401 ◽

2014 ◽

Vol 32 (2) ◽

pp. 022202 ◽

Cited By ~ 10

Author(s):

Lu Liu ◽

Ya-Hsi Hwang ◽

Yuyin Xi ◽

Fan Ren ◽

Valentin Craciun ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

Dc Characteristics ◽

Source Field

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Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3644480 ◽

2011 ◽

Vol 29 (6) ◽

pp. 061201 ◽

Cited By ~ 15

Author(s):

C. F. Lo ◽

L. Liu ◽

F. Ren ◽

H.-Y. Kim ◽

J. Kim ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dc Characteristics

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Proton irradiation effects on AlN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3482335 ◽

2010 ◽

Vol 28 (5) ◽

pp. L47-L51 ◽

Cited By ~ 15

Author(s):

C. F. Lo ◽

C. Y. Chang ◽

B. H. Chu ◽

H.-Y. Kim ◽

J. Kim ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4813785 ◽

2013 ◽

Vol 31 (4) ◽

pp. 042202 ◽

Cited By ~ 17

Author(s):

Lu Liu ◽

Camilo Velez Cuervo ◽

Yuyin Xi ◽

Fan Ren ◽

Stephen J. Pearton ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters

Journal of Electronic Materials ◽

10.1007/s11664-010-1434-7 ◽

2010 ◽

Vol 40 (4) ◽

pp. 362-368

Author(s):

Valerio Di Lecce ◽

Michele Esposto ◽

Matteo Bonaiuti ◽

Fausto Fantini ◽

Gaudenzio Meneghesso ◽

...

Keyword(s):

Numerical Simulations ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Scattering Parameters ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dc Characteristics ◽

Electrical Degradation

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The effects of 60 Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/21/7/078503 ◽

2012 ◽

Vol 21 (7) ◽

pp. 078503 ◽

Cited By ~ 2

Author(s):

Chao Chen ◽

Ben-Lang Tian ◽

Xing-Zhao Liu ◽

Li-Ping Dai ◽

Xin-Wu Deng ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Dc Characteristics ◽

Γ Ray

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DC characteristics of lattice-matched InAlN/AlN/GaN high electron mobility transistors

Transactions of Tianjin University ◽

10.1007/s12209-013-1920-0 ◽

2013 ◽

Vol 19 (1) ◽

pp. 43-46 ◽

Cited By ~ 1

Author(s):

Sheng Xie ◽

Zhihong Feng ◽

Bo Liu ◽

Shaobo Dun ◽

Luhong Mao ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dc Characteristics ◽

Lattice Matched

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Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4891629 ◽

2014 ◽

Vol 32 (5) ◽

pp. 051203 ◽

Cited By ~ 4

Author(s):

Travis Anderson ◽

Andrew Koehler ◽

Ya-Hsi Hwang ◽

Yueh-Ling Hsieh ◽

Shun Li ◽

...

Keyword(s):

Thermal Resistance ◽

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4864070 ◽

2014 ◽

Vol 32 (2) ◽

pp. 021203 ◽

Cited By ~ 6

Author(s):

Shun Li ◽

Ya-Hsi Hwang ◽

Yueh-Ling Hsieh ◽

Lei Lei ◽

Fan Ren ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4929544 ◽

2015 ◽

Vol 33 (5) ◽

pp. 051212 ◽

Cited By ~ 2

Author(s):

Ling Lv ◽

Xiaohua Ma ◽

He Xi ◽

Linyue Liu ◽

Yanrong Cao ◽

...

Keyword(s):

Theoretical Analysis ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Electron Mobility Transistors

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