scholarly journals Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

Micromachines ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 35
Author(s):  
Hujun Jia ◽  
Yuan Liang ◽  
Tao Li ◽  
Yibo Tong ◽  
Shunwei Zhu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Space Region ◽  
Saturation Current ◽  
Power Added Efficiency ◽  
Acceptable Range ◽  
Effect Transistor

A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing the thickness of the undoped region. Compared with the double-recessed 4H-SiC MESFET with partly undoped space region (DRUS-MESFET), the power added efficiency of the LDUS-MESFET is increased by 85.8%, and the saturation current is increased by 27.4%. Although the breakdown voltage of the device has decreased, the decrease is within an acceptable range. Meanwhile, the LDUS-MESFET has a smaller gate-source capacitance and a large transconductance. Therefore, the LDUS-MESFET can better balance DC and AC characteristics and improve power added efficiency (PAE).

scholarly journals An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 573 ◽  
Author(s):  
Hujun Jia ◽  
Mei Hu ◽  
Shunwei Zhu
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

scholarly journals An Improved 4H-SiC MESFET with a Partially Low Doped Channel

Micromachines ◽  
2019 ◽  
Vol 10 (9) ◽  
pp. 555 ◽  
Author(s):  
Hujun Jia ◽  
Yibo Tong ◽  
Tao Li ◽  
Shunwei Zhu ◽  
Yuan Liang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Doping Concentration ◽  
Field Effect Transistor ◽  
Saturation Current ◽  
Absolute Value ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Absolute

An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a partially low doped channel (PLDC) under the gate, which increases the PAE of the device by decreasing the absolute value of the threshold voltage (Vt), gate-source capacitance (Cgs) and saturation current (Id). The simulated results show that with the increase of H, the PAE of the device increases and then decreases when the value of NPLDC is low enough. The doping concentration and thickness of the PLDC are respectively optimized to be NPLDC = 1 × 1015 cm−3 and H = 0.15 μm to obtain the best PAE. The maximum PAE obtained from the PLDC-MESFET is 43.67%, while the PAE of the DR-MESFET is 23.43%; the optimized PAE is increased by 86.38%.

scholarly journals Improved MRD 4H-SiC MESFET with High Power Added Efficiency

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 479 ◽  
Author(s):  
Shunwei Zhu ◽  
Hujun Jia ◽  
Xingyu Wang ◽  
Yuan Liang ◽  
Yibo Tong ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Buffer Layer ◽  
High Power ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Design System ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
Rf Performance

An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based on multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (MRD 4H-SiC MESFET), the recessed area of MRD MESFET on both sides of the gate is optimized, the direct current (DC), radio frequency (RF) parameters and efficiency of the device is balanced, and the IMRD MESFET with a best power-added efficiency (PAE) is finally obtained. The results show that the PAE of the IMRD MESFET is 68.33%, which is 28.66% higher than the MRD MESFET, and DC and RF performance have not dropped significantly. Compared with the MRD MESFET, the IMRD MESFET has a broader prospect in the field of microwave radio frequency.

On the --- high breakdown voltage field-effect transistor

1999 ◽  
Vol 14 (4) ◽  
pp. 307-311 ◽  
Author(s):  
Wen-Lung Chang ◽  
Shiou-Ying Cheng ◽  
Yung-Hsin Shie ◽  
Hsi-Jen Pan ◽  
Wen-Shiung Lour ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Breakdown Voltage ◽  
Effect Transistor

The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

2019 ◽  
Vol 40 (7) ◽  
pp. 1048-1051 ◽  
Author(s):  
Josephine Chang ◽  
Shamima Afroz ◽  
Ken Nagamatsu ◽  
Kevin Frey ◽  
Sarat Saluru ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Rf Amplifier ◽  
Super Lattice ◽  
Effect Transistor
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