scholarly journals High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

2019 ◽  
Vol 115 (1) ◽  
pp. 012104 ◽  
Author(s):  
Dongjea Seo ◽  
Dong Yun Lee ◽  
Junyoung Kwon ◽  
Jea Jung Lee ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
High Performance ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Monolayer Mos2 ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene ◽  
Effect Transistor

Salt-assisted growth of monolayer MoS2 for high-performance hysteresis-free field-effect transistor

2021 ◽  
Vol 129 (14) ◽  
pp. 145106
Author(s):  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Mousam Charan Sahu ◽  
Sanjeev K. Gupta ◽  
Saroj Prasad Dash ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Free Field ◽  
Monolayer Mos2 ◽  
Effect Transistor

A stacked structure comprising 3-dimensional nitrogen-doped graphene, silicon microchannel plate, and TiO2 for high-performance anode in lithium-ion battery

2019 ◽  
Vol 9 (6) ◽  
pp. 629-634 ◽  
Author(s):  
Fengjuan Miao ◽  
Rui Miao ◽  
Zang Yu ◽  
Cuiping Shi ◽  
Lei Zhu ◽  
...  
Keyword(s):  
Lithium Ion Battery ◽  
Photoelectron Spectroscopy ◽  
Active Sites ◽  
High Performance ◽  
Large Scale ◽  
Electrochemical Techniques ◽  
Lithium Ion ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene

A hybrid electrode composed of silicon microchannel plates (Si MCPs) coated with nitrogen-doped graphene and TiO2 is prepared and used as the anode in a lithium-ion battery. The materials are characterized systematically by scanning electron microscopy, Raman scattering spectroscopy, X-ray photoelectron spectroscopy, and electrochemical techniques. The unique porous and ordered nanostructure of the TiO2/N-graphene/Si-MCP nanocomposite provides short paths for diffusion of Li ions and immobilized active sites, whereas N-doped graphene facilitates fast charge transportation. The synergetic effects result in high reversible specific capacities and stability. Owing to the compatibility with semiconductor processing and devices, the concept and technique have large potential in large-scale fabrication of high-performance anodes of lithium-ion batteries, especially those integrated into microelectronic chips.

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

Exploration of the Active Center Structure of Nitrogen-Doped Graphene for Control over the Growth of Co3O4 for a High-Performance Supercapacitor

2017 ◽  
Vol 1 (1) ◽  
pp. 143-153 ◽  
Author(s):  
Xiaoning Tian ◽  
Xiaolong Sun ◽  
Zhongqing Jiang ◽  
Zhong-Jie Jiang ◽  
Xiaogang Hao ◽  
...  
Keyword(s):  
Active Center ◽  
High Performance ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene
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