scholarly journals Tunable Memristic Characteristics Based on Graphene Oxide Charge-Trap Memory

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 151 ◽  
Author(s):  
Lei Li
Keyword(s):  
Graphene Oxide ◽  
Electron Microscope ◽  
Indium Tin Oxide ◽  
Nonvolatile Memory ◽  
Nanocomposite Films ◽  
Large Area ◽  
Charge Trap ◽  
Nonvolatile Memory Devices ◽  
Device Applications ◽  
Sandwiched Structure

Solution-processable nonvolatile memory devices, consisted of graphene oxide (GO) embedded into an insulating polymer polymethyl methacrylate (PMMA), were manufactured. By varying the GO content in PMMA nanocomposite films, the memristic conductance behavior of the Ni/PMMA:GO/Indium tin oxide (ITO) sandwiched structure can be tuned in a controllable manner. An investigation was made on the memristic performance mechanism regarding GO charge-trap memory; these blends were further characterized by transmission electron microscope (TEM), scanning electron microscope (SEM), Fourier transform infrared spectra (FTIR), Raman spectra, thermogravimetric analysis, X-ray diffraction (XRD), ultraviolet-visible spectroscopy, and fluorescence spectra in particular. Dependent on the GO content, the resistive switching was originated from the charges trapped in GO, for which bipolar tunable memristic behaviors were observed. PMMA:GO composites possess an ideal capability for large area device applications with the benefits of superior electronic properties and easy chemical modification.

Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices

2010 ◽  
Vol 96 (5) ◽  
pp. 052907 ◽  
Author(s):  
Youngmin Park ◽  
Jong Kyung Park ◽  
Myeong Ho Song ◽  
Sung Kyu Lim ◽  
Jae Sub Oh ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Compositional Dependence ◽  
Charge Trap ◽  
Nonvolatile Memory Devices

scholarly journals Graphene Oxide: Graphene Quantum Dot Nanocomposite for Better Memristic Switching Behaviors

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1448
Author(s):  
Lei Li
Keyword(s):  
Graphene Oxide ◽  
Data Storage ◽  
Indium Tin Oxide ◽  
Nonvolatile Memory ◽  
Conduction Mechanism ◽  
Graphene Quantum Dots ◽  
Charge Trapping ◽  
Reset Voltage ◽  
Ultrahigh Density ◽  
A Charge

Tristable memristic switching provides the capability for multi-bit data storage. In this study, all-inorganic multi-bit memory devices were successfully manufactured by the attachment of graphene quantum dots (GQDs) onto graphene oxide (GO) through a solution-processable method. By means of doping GQDs as charge-trapping centers, the device indium-tin oxide (ITO)/GO:0.5 wt%GQDs/Ni revealed controllable memristic switching behaviors that were tunable from binary to ternary, and remarkably enhanced in contrast with ITO/GO/Ni. It was found that the device has an excellent performance in memristic switching parameters, with a SET1, SET2 and RESET voltage of −0.9 V, −1.7 V and 5.15 V, as well as a high ON2/ON1/OFF current ratio (103:102:1), and a long retention time (104 s) together with 100 successive cycles. The conduction mechanism of the binary and ternary GO-based memory cells was discussed in terms of experimental data employing a charge trapping-detrapping mechanism. The reinforcement effect of GQDs on the memristic switching of GO through cycle-to-cycle operation has been extensively investigated, offering great potential application for multi-bit data storage in ultrahigh-density, nonvolatile memory.

scholarly journals Fabrication of Metal Nanoparticle Arrays in the ZrO2(Y), HfO2(Y), and GeOx Films by Magnetron Sputtering

2017 ◽  
Vol 2017 ◽  
pp. 1-7 ◽  
Author(s):  
Oleg Gorshkov ◽  
Ivan Antonov ◽  
Dmitry Filatov ◽  
Maria Shenina ◽  
Alexander Kasatkin ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Nonvolatile Memory ◽  
Metal Nanoparticle ◽  
Nanocomposite Films ◽  
Fabrication Technology ◽  
Optical Absorption Peak ◽  
Single Electronics ◽  
Nonvolatile Memory Devices ◽  
Single Sheet ◽  
Plasmon Polaritons

The single sheet arrays of Au nanoparticles (NPs) embedded into the ZrO2(Y), HfO2(Y), and GeOx (x≈2) films have been fabricated by the alternating deposition of the nanometer-thick dielectric and metal films using Magnetron Sputtering followed by annealing. The structure and optical properties of the NP arrays have been studied, subject to the fabrication technology parameters. The possibility of fabricating dense single sheet Au NP arrays in the matrices listed above with controlled NP sizes (within 1 to 3 nm) and surface density has been demonstrated. A red shift of the plasmonic optical absorption peak in the optical transmission spectra of the nanocomposite films (in the wavelength band of 500 to 650 nm) has been observed. The effect was attributed to the excitation of the collective surface plasmon-polaritons in the dense Au NP arrays. The nanocomposite films fabricated in the present study can find various applications in nanoelectronics (e.g., single electronics, nonvolatile memory devices), integrated optics, and plasmonics.

scholarly journals Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device

Polymers ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 901 ◽  
Author(s):  
Ju-Young Choi ◽  
Hwan-Chul Yu ◽  
Jeongjun Lee ◽  
Jihyun Jeon ◽  
Jaehyuk Im ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Indium Tin Oxide ◽  
Nonvolatile Memory ◽  
In Situ Polymerization ◽  
Random Access ◽  
Charge Trapping ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Current Ratio ◽  
Functionalized Graphene Oxide

2,6-Diaminoanthracene (AnDA)-functionalized graphene oxide (GO) (AnDA-GO) was prepared and used to synthesize a graphene oxide-based polyimide (PI-GO) by the in-situ polymerization method. A PI-GO nanocomposite thin film was prepared and characterized by infrared (IR) spectroscopy, thermogravimetric analysis (TGA) and UV-visible spectroscopy. The PI-GO film was used as a memory layer in the fabrication of a resistive random access memory (RRAM) device with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes. The device showed write-once-read-many-times (WORM) characteristics with a high ON/OFF current ratio (Ion/Ioff = 3.41 × 108). This excellent current ratio was attributed to the high charge trapping ability of GO. In addition, the device had good endurance until the 100th cycle. These results suggest that PI-GO is an attractive candidate for applications in next generation nonvolatile memory.

BODIPY-based conjugated polymer covalently grafted reduced graphene oxide for flexible nonvolatile memory devices

Carbon ◽  
2017 ◽  
Vol 116 ◽  
pp. 713-721 ◽  
Author(s):  
Sai Sun ◽  
Xiaodong Zhuang ◽  
Luxin Wang ◽  
Bo Liu ◽  
Bin Zhang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Conjugated Polymer ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Reduced Graphene ◽  
Nonvolatile Memory Devices

scholarly journals Spray Deposition of Ag Nanowire–Graphene Oxide Hybrid Electrodes for Flexible Polymer–Dispersed Liquid Crystal Displays

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2231 ◽  
Author(s):  
Yumi Choi ◽  
Chang Kim ◽  
Sungjin Jo
Keyword(s):  
Optical Properties ◽  
Graphene Oxide ◽  
Sheet Resistance ◽  
Indium Tin Oxide ◽  
Spray Deposition ◽  
Spray Coating ◽  
Optical Transmittance ◽  
Large Area ◽  
Flexible Polymer ◽  
Polymer Dispersed

We investigated the effect of different spray-coating parameters on the electro-optical properties of Ag nanowires (NWs). Highly transparent and conductive Ag NW–graphene oxide (GO) hybrid electrodes were fabricated by using the spray-coating technique. The Ag NW percolation network was modified with GO and this led to a reduced sheet resistance of the Ag NW–GO electrode as the result of a decrease in the inter-nanowire contact resistance. Although electrical conductivity and optical transmittance of the Ag NW electrodes have a trade-off relationship, Ag NW–GO hybrid electrodes exhibited significantly improved sheet resistance and slightly decreased transmittance compared to Ag NW electrodes. Ag NW–GO hybrid electrodes were integrated into smart windows based on polymer-dispersed liquid crystals (PDLCs) for the first time. Experimental results showed that the electro-optical properties of the PDLCs based on Ag NW–GO electrodes were superior when compared to those of PDLCs based on only Ag NW electrodes. This study revealed that the hybrid Ag NW–GO electrode is a promising material for manufacturing the large-area flexible indium tin oxide (ITO)-free PDLCs.

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