scholarly journals Fabrication of Metal Nanoparticle Arrays in the ZrO2(Y), HfO2(Y), and GeOx Films by Magnetron Sputtering

2017 ◽  
Vol 2017 ◽  
pp. 1-7 ◽  
Author(s):  
Oleg Gorshkov ◽  
Ivan Antonov ◽  
Dmitry Filatov ◽  
Maria Shenina ◽  
Alexander Kasatkin ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Nonvolatile Memory ◽  
Metal Nanoparticle ◽  
Nanocomposite Films ◽  
Fabrication Technology ◽  
Optical Absorption Peak ◽  
Single Electronics ◽  
Nonvolatile Memory Devices ◽  
Single Sheet ◽  
Plasmon Polaritons

The single sheet arrays of Au nanoparticles (NPs) embedded into the ZrO2(Y), HfO2(Y), and GeOx (x≈2) films have been fabricated by the alternating deposition of the nanometer-thick dielectric and metal films using Magnetron Sputtering followed by annealing. The structure and optical properties of the NP arrays have been studied, subject to the fabrication technology parameters. The possibility of fabricating dense single sheet Au NP arrays in the matrices listed above with controlled NP sizes (within 1 to 3 nm) and surface density has been demonstrated. A red shift of the plasmonic optical absorption peak in the optical transmission spectra of the nanocomposite films (in the wavelength band of 500 to 650 nm) has been observed. The effect was attributed to the excitation of the collective surface plasmon-polaritons in the dense Au NP arrays. The nanocomposite films fabricated in the present study can find various applications in nanoelectronics (e.g., single electronics, nonvolatile memory devices), integrated optics, and plasmonics.

scholarly journals Tunable Memristic Characteristics Based on Graphene Oxide Charge-Trap Memory

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 151 ◽  
Author(s):  
Lei Li
Keyword(s):  
Graphene Oxide ◽  
Electron Microscope ◽  
Indium Tin Oxide ◽  
Nonvolatile Memory ◽  
Nanocomposite Films ◽  
Large Area ◽  
Charge Trap ◽  
Nonvolatile Memory Devices ◽  
Device Applications ◽  
Sandwiched Structure

Solution-processable nonvolatile memory devices, consisted of graphene oxide (GO) embedded into an insulating polymer polymethyl methacrylate (PMMA), were manufactured. By varying the GO content in PMMA nanocomposite films, the memristic conductance behavior of the Ni/PMMA:GO/Indium tin oxide (ITO) sandwiched structure can be tuned in a controllable manner. An investigation was made on the memristic performance mechanism regarding GO charge-trap memory; these blends were further characterized by transmission electron microscope (TEM), scanning electron microscope (SEM), Fourier transform infrared spectra (FTIR), Raman spectra, thermogravimetric analysis, X-ray diffraction (XRD), ultraviolet-visible spectroscopy, and fluorescence spectra in particular. Dependent on the GO content, the resistive switching was originated from the charges trapped in GO, for which bipolar tunable memristic behaviors were observed. PMMA:GO composites possess an ideal capability for large area device applications with the benefits of superior electronic properties and easy chemical modification.

Tunable Magnetoelectric Nonvolatile Memory Devices Based on SmFeO3/P(VDF-TrFE) Nanocomposite Films

2018 ◽  
Vol 1 (7) ◽  
pp. 3196-3203 ◽  
Author(s):  
Anju Ahlawat ◽  
S. Satapathy ◽  
Mandar M. Shirolkar ◽  
Jieni Li ◽  
Azam Ali Khan ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Nanocomposite Films ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Fabrication of YMnO3 Films: New Candidate for Non-Volatile Memory Devices

1996 ◽  
Vol 433 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tadashi Ishida ◽  
Takeshi Yoshimura ◽  
Taichiro Ito
Keyword(s):  
Nonvolatile Memory ◽  
Valence Electron ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Deposition Condition ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Nonvolatile Memory Devices ◽  
First Time

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

Synthesis and characterization of Cu3N–WC nanocomposite films prepared by direct current magnetron sputtering

2010 ◽  
Vol 518 (18) ◽  
pp. 5227-5232 ◽  
Author(s):  
Shihong Zhang ◽  
Yinsheng He ◽  
Mingxi Li ◽  
Yizhu He ◽  
Sikchol Kwon ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Direct Current ◽  
Nanocomposite Films ◽  
Synthesis And Characterization ◽  
Direct Current Magnetron Sputtering

Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films

2007 ◽  
Vol 91 (7) ◽  
pp. 073511 ◽  
Author(s):  
Liang Chen ◽  
Yidong Xia ◽  
Xuefei Liang ◽  
Kuibo Yin ◽  
Jiang Yin ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices
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