scholarly journals Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6313
Author(s):  
Fang-I Lai ◽  
Jui-Fu Yang ◽  
Yu-Chao Hsu ◽  
Shou-Yi Kuo
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Hall Effect Measurement ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
Optoelectronic Property ◽  
X Ray ◽  
Conductive Films ◽  
Azo Thin Film

In this study, a radio-frequency magnetron sputter system was used to deposit Al2O3 doped ZnO (AZO) thin films at room temperature, and the soda lime glass (SLG) substrates were placed at different zones relative to the center of the sample holder under the target. The samples were then analyzed using an X-ray diffractometer, Hall-effect measurement system, UV-visible spectrophotometer, and X-ray photoelectron spectroscopy. It was found that the electrical, structural, and optical properties of AZO films strongly depend on the target racetrack. The AZO thin film grown at a location outside the racetrack not only has the most suitable figure of merit for transparent conductive films, but also retains the least residual stress, which makes it the most suitable candidate for use as a CZTSe transparent conductive layer. When applied to CZTSe solar cells, the photoelectric efficiency is 3.56%.

Observation of Cu2ZnSnS4 thin film prepared by RF magnetron sputtering for heterojunction applications

2014 ◽  
Vol 28 (16) ◽  
pp. 1450134 ◽  
Author(s):  
Bo He ◽  
Jing Xu ◽  
Hong Zhi Wang ◽  
Yao Gang Li ◽  
Huai Zhong Xing ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Tin Sulfide ◽  
Copper Zinc Tin Sulfide ◽  
X Ray ◽  
Copper Zinc ◽  
Cu2znsns4 Thin Film

In this paper, copper-zinc-tin-sulfide ( Cu 2 ZnSnS 4) thin film was successfully fabricated by radio-frequency (RF) magnetron sputtering on glass substrate. The structural, optical and electrical properties of the film were studied by X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectrometer, field emission scanning electron microscope (FESEM), UV-VIS spectrophotometer and Hall effect measurement, respectively. The results show that Cu 2 ZnSnS 4 film is of good quality. A good nonlinear rectifying behavior is obtained for the GZO / Cu 2 ZnSnS 4 heterojunction. Under reverse bias, high photocurrent is obtained.

scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
X Ray

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.

Effects of 2nd Phases, Stress, and Na at the Mo/Cu2ZnSnS4 Interface

2010 ◽  
Vol 1268 ◽  
Author(s):  
Jeffrey L. Johnson ◽  
Haritha Nukala ◽  
Ashish Bhatia ◽  
W.M. Hlaing Oo ◽  
Loren W Rieth ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Scale Up ◽  
Rf Sputtering ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Alternative Material ◽  
Curvature Measurements ◽  
Mismatch Stress ◽  
And Performance

AbstractCu2ZnSnS4 (CZTS) is an alternative material to Cu(In,Ga)Se2 (CIGSe) for use in thin film photovoltaic absorber layers composed solely of commodity elements [1,2]. Thus, if similar material quality and performance can be realized, its use would allow scale-up of terrestrial thin film photovoltaic production unhindered by material price or supply constraints. Here we report on our research on the deposition of CZTS by RF sputtering from a single CZTS target and co-sputtering from multiple binary sources on Mo-coated glass. We find some samples delaminate during post-sputtering furnace annealing in S vapor. Samples on borosilicate glass (BSG) delaminate much more frequently than those on soda-lime glass (SLG). We investigate the influences of the formation of frangible phases such as MoS2 at the CZTS/Mo interface and residual and thermal mismatch stress on delamination. We implicate fracture in a layer of MoS2 as the mechanism of delamination between the Mo and CZTS layers using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Wafer curvature measurements show significant (˜400 MPa) deposition stress for minimally optimized Mo deposition; however nearly stress-free Mo layers with good adhesion can be deposited using a multi-step Mo deposition recipe. Co-sputtering CZTS adds 100 MPa of stress on both BSG and SLG, however delamination is nearly absent for samples deposited on low-stress Mo layers. We investigate metallic diffusion barrier layers to prevent the formation of MoS2 at the interface. Lastly we discuss the importance of removing Mo oxide by sputter etching before CZTS deposition and its effects on adhesion and series resistance.

Effects of Growth Parameters on Surface-morphological, Structural and Electrical Properties of Mo Films by RF Magnetron Sputtering

2008 ◽  
Vol 1123 ◽  
Author(s):  
Shou-Yi Kuo ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Wei-Ting Lin ◽  
Yong-Tian Lu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Growth Parameters ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
Working Pressure ◽  
Soda Lime Glass Substrate ◽  
X Ray

AbstractThis work reports on the fabrication and characterization of Mo thin films on soda-lime glass substrate grown by reactive RF magnetron sputtering. Film thickness was measured by x-ray step surface profiler. The structural properties and surface morphology were analyzed by x-ray diffraction (XRD), atomic force microscope (AFM) and scanning electron microscopy (SEM). Electrical properties were measured by four-point probe. It was found that the growth parameters, such as argon flow rate, RF power, film thickness, have significant influences on properties of Mo films. The strain on films revealed the complicated relationship with the working pressure, which might be associated with micro structures and impurities. In order to improve the adhesion and electricity, we adopted a two-pressure deposition scheme. The optimal thickness and sheet resistance are νm and 0.12 ω The mechanisms therein will be discussed in detail. Furthermore, we also investigated the diffusion property of Na ion of double Mo films sputtered on soda-lime glass. Our experimental results could lead to better understanding for improving further CIGS-based photovoltaic devices.

Determination of band alignment between GaOx and boron doped diamond for selective-area-doped termination structure

2021 ◽  
Author(s):  
Qi-Liang Wang ◽  
Shi-Yang Fu ◽  
Si-Han He ◽  
Hai-Bo Zhang ◽  
Shao-Heng Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Band Alignment ◽  
Boron Doped Diamond ◽  
Small Surface ◽  
X Ray ◽  
Selective Area ◽  
Boron Doped

Abstract n-GaOx thin film is deposited on the single crystal boron doped diamond through RF magnetron sputtering to form a pn heterojunction. The n-GaOx thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured by using X-ray photoelectron spectroscopy to evaluate the heterojunction property. The GaOx/diamond heterojunction shows a type-II staggered band configuration with the valence and conduction band offsets are of 1.28 eV and 1.93 eV, respectively. Those results confirm the feasibility to use n-GaOx as termination structure for diamond power device.

Enhanced Mo Adhesion on Glass With Cr Interlayers for Copper Indium Diselenide Thin Film Devices

1996 ◽  
Vol 426 ◽  
Author(s):  
Jeff Alleman ◽  
Dave Ginley ◽  
Falah Hasoon ◽  
Sally Asher ◽  
Rommel Noufi
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Bulk Material ◽  
Surface Preparation ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Process Conditions ◽  
Copper Indium Diselenide ◽  
Copper Indium ◽  
Glass Interface

AbstractA key element of current Copper Indium Diselenide (CIS) and Copper Indium Gallium Diselenide (CIGS) thin film solar cells is the use of a Mo back contact on soda lime glass (SGL). Because of surface preparation problems, high process temperatures, and mismatch of thermal expansion coefficients, adhesion of the Mo to the soda lime glass can be variable. Also beneficial is the Na facile diffusion of the glass into the absorber layer. We report on the use of thin Cr interlayers to improve the adhesion at the Mo/glass interface. The films were subsequently annealed in vacuum under normal process conditions. Adhesion was excellent and quite uniform for Mo layers with a Cr interlayer of 50 to 800 Å compared to control samples without Cr. X-ray Photoelectron Spectroscopy (XPS) data suggests CrO bonding at the glass interface and Cr metallic bonding at the Cr Mo interface. Secondary Ion Mass Spectrometry (SIMS) data for Mo/Cr films shows diffusion of Na throughout the Mo layer identical to that for Mo alone samples. Resistivities of the films have been measured to be 11 μhms-cm, twice that for bulk material of 5.7 μohms-cm. CIGS films were then grown for comparison to films grown on Mo only substrates.

scholarly journals Preparation and Characterization ofSb2Te3Thin Films by Coevaporation

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Bin Lv ◽  
Songbai Hu ◽  
Wei Li ◽  
Xia Di ◽  
Lianghuan Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
Electrical Transport ◽  
Film Surface ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Conductivity Measurements ◽  
X Ray ◽  
Thin Film Surface

Deposition ofSb2Te3thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper.Sb2Te3thin films were characterized by x-ray diffraction (XRD), x-ray fluorescence (XRF), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred fromin situelectrical conductivity measurements. The results indicate that as-grownSb2Te3thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.

Preparation of TiFe thin Films by Pulsed Ion Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulse Width ◽  
Ion Beam ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
A Current

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.

Application of ultrasonic assisted soldering method to hard-to-solder material

2018 ◽  
Vol 32 (19) ◽  
pp. 1840054 ◽  
Author(s):  
Daisuke Yonekura ◽  
Tomoyuki Ueki ◽  
Yuki Taguchi
Keyword(s):  
Intermetallic Compound ◽  
Photoelectron Spectroscopy ◽  
Chemical Shifts ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Xps Analysis ◽  
X Ray ◽  
Soldering Process ◽  
Fused Quartz ◽  
Ultrasonic Assisted

In this study, Pb-free solders were bonded to soda-lime glass and fused quartz plates using the ultrasonic assisted soldering (UAS) method. The solder–glass interfaces were observed and analyzed to clarify the effect of the elements in the solder and glass bonding behavior. As a result, the Sn–Zn solder was bonded to glass without the intermetallic compound (IMC) layer. However, the Sn–Ag–Cu solder was not able to bond to glass even though ultrasonication was performed during the soldering process. Chemical shifts for Zn 2p and O 1s spectra were observed at the interface by X-ray photoelectron spectroscopy (XPS) analysis, which is attributed to the chemical bonding between the substrates and elements in solder alloy. In conclusion, O in the substrate and Zn in the solder were important to form the bond between the glass and solder.

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