scholarly journals Preparation and Characterization ofSb2Te3Thin Films by Coevaporation

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Bin Lv ◽  
Songbai Hu ◽  
Wei Li ◽  
Xia Di ◽  
Lianghuan Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
Electrical Transport ◽  
Film Surface ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Conductivity Measurements ◽  
X Ray ◽  
Thin Film Surface

Deposition ofSb2Te3thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper.Sb2Te3thin films were characterized by x-ray diffraction (XRD), x-ray fluorescence (XRF), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred fromin situelectrical conductivity measurements. The results indicate that as-grownSb2Te3thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.

scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

Effects of Substrates on the Composition and Microstructure of TiO2 Thin Films Prepared by the LPD Method

2007 ◽  
Vol 280-283 ◽  
pp. 795-800 ◽  
Author(s):  
Huogen Yu ◽  
Jia Guo Yu ◽  
Bei Cheng ◽  
C.H. Ao ◽  
S.C. Lee
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Photoelectron Spectroscopy ◽  
Steel Substrate ◽  
Precursor Solution ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Steel Substrates

TiO2 thin films were prepared on soda lime glass, fused quartz and stainless steel substrates by liquid phase deposition (LPD) method from a (NH4)2TiF6 aqueous solution upon the addition of boric acid (H3BO3), and then calcined at 500oC for 2 h. The prepared films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). It was found that the substrates obviously influenced the element composition and microstructure of TiO2 thin films. Except Ti, O and a small amount of F and N elements, which came from the precursor solution, some Si (or Fe) element in the thin films deposited on soda lime glass and quartz substrates (or on stainless steel substrate) was confirmed. The Si (or Fe) element in the thin films could be attributed to two sources. One was from the SiF6 2- ions (or FeF6 2- ions) formed by a reaction between the treatment solution and soda lime glass or quartz (or stainless steel) substrates. The other was attributed to the diffusion of Si (or Fe) from the surface of substrates into the TiO2 thin films after calcination at 500oC. The Si (or Fe) element in the TiO2 thin films could behave as a dopant and resulted in the formation of composite SiO2/TiO2 (or Fe2O3/TiO2) thin films on the substrates.

Preparation and Characterization of Cd1-xZnxS Thin Films with Chemical Bath Deposition

2015 ◽  
Vol 1088 ◽  
pp. 86-90
Author(s):  
Li Mei Zhou ◽  
Yun Long Li ◽  
Yue Jie Dong
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Measurement Instrument ◽  
Soda Lime ◽  
Atomic Ratio ◽  
Visible Range ◽  
Soda Lime Glass ◽  
Height Measurement ◽  
X Ray

Cd1-xZnxS thin films were grown on soda-lime glass substrates by chemical-bath deposition (CBD). The surface morphology, thickness, composition, state of the constituent elements and optical properties of the films were studied with X-ray diffraction (XRD), scanning electron microscopy (SEM), step height measurement instrument, X-ray photoelectron spectroscopy (XPS) and spectrophotometer, respectively. The affect of annealing for the Cd1-xZnxS thin films was studied. The Cd1-xZnxS thin films had cubic crystal structure and the average transmittance was 86.8% in the visible range with the optical band gap of 2.61eV and the films thickness was about 50nm. The atomic ratio of (Cd + Zn): S increased after annealing.

Structural characterization of Zn–In–Se thin films

2017 ◽  
Vol 31 (05) ◽  
pp. 1750043 ◽  
Author(s):  
H. H. Güllü ◽  
M. Parlak
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Compositional Analysis ◽  
Surface Characteristics ◽  
Thermal Evaporation Method ◽  
Near Surface ◽  
X Ray ◽  
Force Microscopy ◽  
Thin Film Surface

In this study, structural properties of the Zn–In–Se (ZIS) thin films deposited by thermal evaporation method were investigated. The as-grown and annealed ZIS films were found in polycrystalline structure with the main orientation in (112) direction. The compositional analysis of the films showed that they were in Zn-rich behavior and there was a slight change in the elemental contribution to the structure with annealing process. Raman analysis was carried out to determine the crystalline structure and the different vibration modes of ZIS thin films. According to these measurements, the highest Raman intensity was in the LO mode which was directly proportional to the crystallinity of the samples. The atomic force microscopy (AFM) analyses were done in order to obtain detailed information about the morphology of the thin film surface. The surface of the films was observed as nearly-smooth and uniform in as-grown and annealed forms. X-ray photoelectron spectroscopy (XPS) measurements were analyzed to get detailed information about surface and near-surface characteristics of the films. The results from the surface and depth compositional analyses of the films showed quite good agreement with the energy dispersive X-ray spectroscopy (EDS) analysis.

Structure and Conductivity of Iodine-Doped C60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
Jun Chen ◽  
Haiyan Zhang ◽  
Baoqiong Chen ◽  
Shaoqi Peng ◽  
Ning Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Thermally Activated ◽  
Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

Use of anti-solvent to enhance thermoelectric response of hybrid-halide perovskite thin films

2022 ◽  
Author(s):  
Shrikant SAINI ◽  
Izuki Matsumoto ◽  
Sakura Kishishita ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Cost Effective ◽  
Performance Tuning ◽  
Charge Carrier Density ◽  
X Ray ◽  
Thermoelectric Energy Harvesting ◽  
Halide Perovskite

Abstract Hybrid halide perovskite has been recently focused on thermoelectric energy harvesting due to the cost-effective fabrication approach and ultra-low thermal conductivity. To achieve high performance, tuning of electrical conductivity is a key parameter that is influenced by grain boundary scattering and charge carrier density. The fabrication process allows tuning these parameters. We report the use of anti-solvent to enhance the thermoelectric performance of lead-free hybrid halide perovskite, CH3NH3SnI3, thin films. Thin films with anti-solvent show higher connectivity in grains and higher Sn+4 oxidation states which results in enhancing the value of electrical conductivity. Thin films were prepared by a cost-effective wet process. Structural and chemical characterizations were performed using x-ray diffraction, scanning electron microscope, and x-ray photoelectron spectroscopy. The value of electrical conductivity and the Seebeck coefficient were measured near room temperature. The high value of power factor (1.55 µW/m.K2 at 320 K) was achieved for thin films treated with anti-solvent.

scholarly journals Origin of Mangetotransport Properties in APCVD Deposited Tin Oxide Thin Films

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5182
Author(s):  
Krunoslav Juraić ◽  
Davor Gracin ◽  
Matija Čulo ◽  
Željko Rapljenović ◽  
Jasper Rikkert Plaisier ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Tin Oxide ◽  
Texture Coefficient ◽  
Chemical Vapour ◽  
Visible Spectrum ◽  
Soda Lime ◽  
Fine Tuning ◽  
Soda Lime Glass ◽  
Charge Carrier Density

Transparent conducting oxides (TCO) with high electrical conductivity and at the same time high transparency in the visible spectrum are an important class of materials widely used in many devices requiring a transparent contact such as light-emitting diodes, solar cells and display screens. Since the improvement of electrical conductivity usually leads to degradation of optical transparency, a fine-tuning sample preparation process and a better understanding of the correlation between structural and transport properties is necessary for optimizing the properties of TCO for use in such devices. Here we report a structural and magnetotransport study of tin oxide (SnO2), a well-known and commonly used TCO, prepared by a simple and relatively cheap Atmospheric Pressure Chemical Vapour Deposition (APCVD) method in the form of thin films deposited on soda-lime glass substrates. The thin films were deposited at two different temperatures (which were previously found to be close to optimum for our setup), 590 °C and 610 °C, and with (doped) or without (undoped) the addition of fluorine dopants. Scanning Electron Microscopy (SEM) and Grazing Incidence X-ray Diffraction (GIXRD) revealed the presence of inhomogeneity in the samples, on a bigger scale in form of grains (80–200 nm), and on a smaller scale in form of crystallites (10–25 nm). Charge carrier density and mobility extracted from DC resistivity and Hall effect measurements were in the ranges 1–3 × 1020 cm−3 and 10–20 cm2/Vs, which are typical values for SnO2 films, and show a negligible temperature dependence from room temperature down to −269 °C. Such behaviour is ascribed to grain boundary scattering, with the interior of the grains degenerately doped (i.e., the Fermi level is situated well above the conduction band minimum) and with negligible electrostatic barriers at the grain boundaries (due to high dopant concentration). The observed difference for factor 2 in mobility among the thin-film SnO2 samples most likely arises due to the difference in the preferred orientation of crystallites (texture coefficient).

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

Influence of Deposition Time and Source-Substrate Distance on Properties of CdTe Thin Films Using Close-Spaced Sublimation at Higher Source Temperature

2013 ◽  
Vol 716 ◽  
pp. 325-327
Author(s):  
Xiao Yan Dai ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Min Yao
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Near Infrared ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray ◽  
Source Temperature ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Cdte Thin Films

In this paper, CdTe thin films were deposited on soda-lime glass substrates using CdTe powder as a source by close-spaced sublimation at higher source temperature of 700°C. The influence of the deposition time and the source-substrate distance on the chemical composition, crystal phase, surface morphology and optical band gap of CdTe thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope and the ultraviolet-visible-near infrared absorption spectra, respectively. At the deposition time of 60 min and the source-substrate distance of 5 mm, the CdTe thin films had pyramid appearance with the grain size of 15 μm.

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