scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

scholarly journals Preparation and Characterization ofSb2Te3Thin Films by Coevaporation

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Bin Lv ◽  
Songbai Hu ◽  
Wei Li ◽  
Xia Di ◽  
Lianghuan Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
Electrical Transport ◽  
Film Surface ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Conductivity Measurements ◽  
X Ray ◽  
Thin Film Surface

Deposition ofSb2Te3thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper.Sb2Te3thin films were characterized by x-ray diffraction (XRD), x-ray fluorescence (XRF), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred fromin situelectrical conductivity measurements. The results indicate that as-grownSb2Te3thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.

Effects of Substrates on the Composition and Microstructure of TiO2 Thin Films Prepared by the LPD Method

2007 ◽  
Vol 280-283 ◽  
pp. 795-800 ◽  
Author(s):  
Huogen Yu ◽  
Jia Guo Yu ◽  
Bei Cheng ◽  
C.H. Ao ◽  
S.C. Lee
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Photoelectron Spectroscopy ◽  
Steel Substrate ◽  
Precursor Solution ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Steel Substrates

TiO2 thin films were prepared on soda lime glass, fused quartz and stainless steel substrates by liquid phase deposition (LPD) method from a (NH4)2TiF6 aqueous solution upon the addition of boric acid (H3BO3), and then calcined at 500oC for 2 h. The prepared films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). It was found that the substrates obviously influenced the element composition and microstructure of TiO2 thin films. Except Ti, O and a small amount of F and N elements, which came from the precursor solution, some Si (or Fe) element in the thin films deposited on soda lime glass and quartz substrates (or on stainless steel substrate) was confirmed. The Si (or Fe) element in the thin films could be attributed to two sources. One was from the SiF6 2- ions (or FeF6 2- ions) formed by a reaction between the treatment solution and soda lime glass or quartz (or stainless steel) substrates. The other was attributed to the diffusion of Si (or Fe) from the surface of substrates into the TiO2 thin films after calcination at 500oC. The Si (or Fe) element in the TiO2 thin films could behave as a dopant and resulted in the formation of composite SiO2/TiO2 (or Fe2O3/TiO2) thin films on the substrates.

Effects of Radio-Frequency Sputtering Power on Low Temperature Formation of MoS2 Thin Films on Soda-Lime Glass Substrates

2020 ◽  
Vol 20 (8) ◽  
pp. 4892-4898
Author(s):  
Zhenqian Zhao ◽  
Min Yu Yin ◽  
Sang Jik Kwon ◽  
Eou-Sik Cho
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rf Sputtering ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Glass Substrates ◽  
Radio Frequency Sputtering ◽  
Sputtering Power ◽  
Surface Morphologies

For the realization of the economical and reliable fabrication process of molybdenum disulfide (MoS2) layers, MoS2 thin films were directly formed a on soda-lime glass substrate by RF sputtering and subsequent rapid thermal annealing (RTA) at a temperature range of 400–550 °C. Using scanning electron microscopy and atomic force microscopy, it was possible to investigate more stable surface morphologies of MoS2 layers at lower RF sputtering powers irrespective of the RTA temperature. Even at an RTA temperature of less than 550 °C, the Raman exhibited more distinct E12g and A1g peaks for the MoS2 layers sputtered at lower RF powers. The X-ray photoelectron spectroscopy results revealed that more distinct peaks were observed at a higher RTA temperature, and the peak positions were moved to higher energies at a lower RF sputtering power. Based on the Hall measurements, higher carrier densities were obtained for the MoS2 layers sputtered at lower RF powers.

Preparation and Characterization of Cd1-xZnxS Thin Films with Chemical Bath Deposition

2015 ◽  
Vol 1088 ◽  
pp. 86-90
Author(s):  
Li Mei Zhou ◽  
Yun Long Li ◽  
Yue Jie Dong
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Measurement Instrument ◽  
Soda Lime ◽  
Atomic Ratio ◽  
Visible Range ◽  
Soda Lime Glass ◽  
Height Measurement ◽  
X Ray

Cd1-xZnxS thin films were grown on soda-lime glass substrates by chemical-bath deposition (CBD). The surface morphology, thickness, composition, state of the constituent elements and optical properties of the films were studied with X-ray diffraction (XRD), scanning electron microscopy (SEM), step height measurement instrument, X-ray photoelectron spectroscopy (XPS) and spectrophotometer, respectively. The affect of annealing for the Cd1-xZnxS thin films was studied. The Cd1-xZnxS thin films had cubic crystal structure and the average transmittance was 86.8% in the visible range with the optical band gap of 2.61eV and the films thickness was about 50nm. The atomic ratio of (Cd + Zn): S increased after annealing.

Influence of Deposition Time and Source-Substrate Distance on Properties of CdTe Thin Films Using Close-Spaced Sublimation at Higher Source Temperature

2013 ◽  
Vol 716 ◽  
pp. 325-327
Author(s):  
Xiao Yan Dai ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Min Yao
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Near Infrared ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray ◽  
Source Temperature ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Cdte Thin Films

In this paper, CdTe thin films were deposited on soda-lime glass substrates using CdTe powder as a source by close-spaced sublimation at higher source temperature of 700°C. The influence of the deposition time and the source-substrate distance on the chemical composition, crystal phase, surface morphology and optical band gap of CdTe thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope and the ultraviolet-visible-near infrared absorption spectra, respectively. At the deposition time of 60 min and the source-substrate distance of 5 mm, the CdTe thin films had pyramid appearance with the grain size of 15 μm.

The Effects of Selenization Temperature on the Properties of CIGS Thin Film Prepared by Cu-In-Ga-Se Precursors

2012 ◽  
Vol 528 ◽  
pp. 214-218
Author(s):  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
Xue Yan Zhang ◽  
Xiao Yu Liu
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Degree Of Reaction ◽  
N2 Atmosphere ◽  
Cigs Thin Film ◽  
Morphology Of Films ◽  
Selenization Temperature

CIGS thin films were prepared by selenization of Cu-In-Ga-Se precursors, as a new method, the effects of selenization temperature on the properties of CIGS thin films were studied. First, Cu-In-Ga-Se precursors were deposited onto Mo-coated soda lime glass by evaporation and sputtering method. Then, precursors were selenized at various temperatures in N2 atmosphere for 120 min to form CIGS thin films. The degree of reaction and morphology of films as a function of selenization temperature were analyzed. By means of field emission scanning electron microscope (SEM) and X-ray diffraction (XRD), it was found that CIGS thin films selenized at 450°C exhibit chalcopyrite phase with preferred orientation along the (112) plane.

Effects of Growth Parameters on Surface-morphological, Structural and Electrical Properties of Mo Films by RF Magnetron Sputtering

2008 ◽  
Vol 1123 ◽  
Author(s):  
Shou-Yi Kuo ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Wei-Ting Lin ◽  
Yong-Tian Lu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Growth Parameters ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
Working Pressure ◽  
Soda Lime Glass Substrate ◽  
X Ray

AbstractThis work reports on the fabrication and characterization of Mo thin films on soda-lime glass substrate grown by reactive RF magnetron sputtering. Film thickness was measured by x-ray step surface profiler. The structural properties and surface morphology were analyzed by x-ray diffraction (XRD), atomic force microscope (AFM) and scanning electron microscopy (SEM). Electrical properties were measured by four-point probe. It was found that the growth parameters, such as argon flow rate, RF power, film thickness, have significant influences on properties of Mo films. The strain on films revealed the complicated relationship with the working pressure, which might be associated with micro structures and impurities. In order to improve the adhesion and electricity, we adopted a two-pressure deposition scheme. The optimal thickness and sheet resistance are νm and 0.12 ω The mechanisms therein will be discussed in detail. Furthermore, we also investigated the diffusion property of Na ion of double Mo films sputtered on soda-lime glass. Our experimental results could lead to better understanding for improving further CIGS-based photovoltaic devices.

scholarly journals Investigation on the Selenization Treatment of Kesterite Cu2Mg0.2Zn0.8Sn(S,Se)4 Films for Solar Cell

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 946 ◽  
Author(s):  
Dongyue Jiang ◽  
Yu Zhang ◽  
Yingrui Sui ◽  
Wenjie He ◽  
Zhanwu Wang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Crystal Quality ◽  
Crystalline Quality ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Morphological Studies ◽  
Selenization Temperature

High-selenium Cu2Mg0.2Zn0.8Sn(S,Se)4 (CMZTSSe) films were prepared on a soda lime glass substrate using the sol–gel spin coating method, followed by selenization treatment. In this work, we investigated the effects of selenization temperature and selenization time on the crystal quality, and electrical and optical properties of CMZTSSe films. The study on the micro-structure by XRD, Raman, X-ray photoelectron spectroscopy (XPS), and energy-dispersive X-ray spectroscopy (EDS) analysis showed that all CMZTSSe samples had kesterite crystalline structure. In addition, the crystalline quality of CMZTSSe is improved and larger Se takes the site of S in CMZTSSe with the increase of selenization temperature and selenization time. When increasing the selenization temperature from 500 to 530 °C and increasing the annealing time from 10 to 15 min, the morphological studies showed that the microstructures of the films were dense and void-free. When further increasing the temperature and time, the crystalline quality of the films began to deteriorate. In addition, the bandgaps of CMZTSSe are tuned from 1.06 to 0.93 eV through adjusting the selenization conditions. When CMZTSSe samples are annealed at 530 °C for 15 min under Se atmosphere, the crystal quality and optical–electrical characteristics of CMZTSSe will be optimal, and the grain size and carrier concentration reach maximums of 1.5–2.5 μm and 6.47 × 1018 cm−3.

Structural, Morphological and Mechanical Characterisation of Molybdenum Nitride Thin Films Deposited by a Plasma Focus Device

2017 ◽  
Vol 41 (12) ◽  
pp. 699-704
Author(s):  
Mohammad Taghi Hosseinnejad ◽  
Mehdi Ettehadi-Abari ◽  
Naser Panahi
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Plasma Focus ◽  
Photoelectron Spectroscopy ◽  
Plasma Focus Device ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Root Mean Square Roughness ◽  
Molybdenum Nitride ◽  
X Ray

This research focuses on the characterisation of nanostructured molybdenum nitride (MoN) thin films deposited on glass substrates at room temperature using a low-energy (1.1 kJ) plasma focus device. The nanostructure, surface morphology, electrical resistivity and mechanical properties of MoN thin films were studied in terms of the number of shots required to prepare them. X-ray diffraction (XRD) analysis indicated that all of the deposited layers were polycrystalline in nature, possessing the γ-Mo2N (fcc) structure. The XRD results also revealed that the degree of crystallinity and residual stress of the thin films were strongly dependent on the number of shots. X-ray photoelectron spectroscopy showed the Mo 3d3/2, Mo 3d5/2, Mo 3p3/2 and N 1s peaks for all of the thin films, confirming the formation of the γ-Mo2N structure. Scanning electron microscopy images showed the growth of granular structures and then the formation of larger-sized agglomerates on the surfaces of the samples with increasing numbers of shots. Atomic force microscopy indicated that grain sizes on surface layers as well as the average and root mean square roughness increased for samples deposited with more shots. Furthermore, the variations in hardness and electrical resistivity of the deposited MoN thin films were qualitatively explained on the basis of the morphological properties of the samples.

Comparative studies on the morphological, structural and optical properties of NiO thin films grown by vacuum and non-vacuum deposition techniques

2021 ◽  
Author(s):  
Mohammad Shah Jamal ◽  
M.S. chowdhury ◽  
Saraswati Bajgai ◽  
M Hossain ◽  
A. Laref ◽  
...  
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Lower Surface ◽  
Soda Lime Glass ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
Soda Lime Glass Substrate ◽  
The Difference ◽  
Deposited Films ◽  
Deposition Techniques

Abstract The structural and optical characteristics of Nickel oxide thin films (NiOTF) formed on the soda-lime glass substrate (SLG) under vacuum and non-vacuum conditions are investigated in this work. The difference between RFMS (Radio Frequency Magnetron Sputtering; vacuum) and SP (spray pyrolysis; non-vacuum) was helpful in the development of NiOTF. Deposited films data for this study were characterized by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), scanning probe microscopy (SPM), and optical spectrophotometer. Structural studies disclosed that NiOTF developed via RFMS technique was more uniform with large crystals and lower surface roughness in contrast to that of developed via SP technique. Transmittance spectrum divulged that the transmittance of spray pyrolyzed NiO films are ~10% less than that of ones produced by RFMS. Urbach energy analysis of NiOTF developed by RFMS and SP affirmed the findings of structural studies.

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