Enhanced Mo Adhesion on Glass With Cr Interlayers for Copper Indium Diselenide Thin Film Devices

1996 ◽  
Vol 426 ◽  
Author(s):  
Jeff Alleman ◽  
Dave Ginley ◽  
Falah Hasoon ◽  
Sally Asher ◽  
Rommel Noufi
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Bulk Material ◽  
Surface Preparation ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Process Conditions ◽  
Copper Indium Diselenide ◽  
Copper Indium ◽  
Glass Interface

AbstractA key element of current Copper Indium Diselenide (CIS) and Copper Indium Gallium Diselenide (CIGS) thin film solar cells is the use of a Mo back contact on soda lime glass (SGL). Because of surface preparation problems, high process temperatures, and mismatch of thermal expansion coefficients, adhesion of the Mo to the soda lime glass can be variable. Also beneficial is the Na facile diffusion of the glass into the absorber layer. We report on the use of thin Cr interlayers to improve the adhesion at the Mo/glass interface. The films were subsequently annealed in vacuum under normal process conditions. Adhesion was excellent and quite uniform for Mo layers with a Cr interlayer of 50 to 800 Å compared to control samples without Cr. X-ray Photoelectron Spectroscopy (XPS) data suggests CrO bonding at the glass interface and Cr metallic bonding at the Cr Mo interface. Secondary Ion Mass Spectrometry (SIMS) data for Mo/Cr films shows diffusion of Na throughout the Mo layer identical to that for Mo alone samples. Resistivities of the films have been measured to be 11 μhms-cm, twice that for bulk material of 5.7 μohms-cm. CIGS films were then grown for comparison to films grown on Mo only substrates.

Effects of 2nd Phases, Stress, and Na at the Mo/Cu2ZnSnS4 Interface

2010 ◽  
Vol 1268 ◽  
Author(s):  
Jeffrey L. Johnson ◽  
Haritha Nukala ◽  
Ashish Bhatia ◽  
W.M. Hlaing Oo ◽  
Loren W Rieth ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Scale Up ◽  
Rf Sputtering ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Alternative Material ◽  
Curvature Measurements ◽  
Mismatch Stress ◽  
And Performance

AbstractCu2ZnSnS4 (CZTS) is an alternative material to Cu(In,Ga)Se2 (CIGSe) for use in thin film photovoltaic absorber layers composed solely of commodity elements [1,2]. Thus, if similar material quality and performance can be realized, its use would allow scale-up of terrestrial thin film photovoltaic production unhindered by material price or supply constraints. Here we report on our research on the deposition of CZTS by RF sputtering from a single CZTS target and co-sputtering from multiple binary sources on Mo-coated glass. We find some samples delaminate during post-sputtering furnace annealing in S vapor. Samples on borosilicate glass (BSG) delaminate much more frequently than those on soda-lime glass (SLG). We investigate the influences of the formation of frangible phases such as MoS2 at the CZTS/Mo interface and residual and thermal mismatch stress on delamination. We implicate fracture in a layer of MoS2 as the mechanism of delamination between the Mo and CZTS layers using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Wafer curvature measurements show significant (˜400 MPa) deposition stress for minimally optimized Mo deposition; however nearly stress-free Mo layers with good adhesion can be deposited using a multi-step Mo deposition recipe. Co-sputtering CZTS adds 100 MPa of stress on both BSG and SLG, however delamination is nearly absent for samples deposited on low-stress Mo layers. We investigate metallic diffusion barrier layers to prevent the formation of MoS2 at the interface. Lastly we discuss the importance of removing Mo oxide by sputter etching before CZTS deposition and its effects on adhesion and series resistance.

scholarly journals Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6313
Author(s):  
Fang-I Lai ◽  
Jui-Fu Yang ◽  
Yu-Chao Hsu ◽  
Shou-Yi Kuo
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Hall Effect Measurement ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
Optoelectronic Property ◽  
X Ray ◽  
Conductive Films ◽  
Azo Thin Film

In this study, a radio-frequency magnetron sputter system was used to deposit Al2O3 doped ZnO (AZO) thin films at room temperature, and the soda lime glass (SLG) substrates were placed at different zones relative to the center of the sample holder under the target. The samples were then analyzed using an X-ray diffractometer, Hall-effect measurement system, UV-visible spectrophotometer, and X-ray photoelectron spectroscopy. It was found that the electrical, structural, and optical properties of AZO films strongly depend on the target racetrack. The AZO thin film grown at a location outside the racetrack not only has the most suitable figure of merit for transparent conductive films, but also retains the least residual stress, which makes it the most suitable candidate for use as a CZTSe transparent conductive layer. When applied to CZTSe solar cells, the photoelectric efficiency is 3.56%.

Structural Evolution of Cu-In-Se Thin Films Prepared by Spin Coating Technique

2013 ◽  
Vol 770 ◽  
pp. 279-282
Author(s):  
Kentreeda Lipiwongwattanakit ◽  
Chanwit Chityuttakan ◽  
Wandee Onreabroy ◽  
Panita Chityuttakan
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Soda Lime ◽  
Spin Coating Technique ◽  
Precursor Film ◽  
Soda Lime Glass ◽  
Copper Indium Diselenide ◽  
Coating Technique ◽  
Copper Indium ◽  
Selenization Process

A low cost and simple fabrication of Cu-In-Se polycrystalline thin film for copper indium diselenide solar cell was prepared in a two-step process. The first step, a Cu In precursor film was prepared from copper acetate monohydrate and indium acetate mixed solution. The solution was coated on molybdenum-coated soda lime glass using the spin coating technique at room temperature following annealing in air at 500°C for 20 minutes. The effect between spin parameters and film thickness of as-deposited Cu-In film were investigated. The second step, selenium was added in the precursor film by selenization process at 450°C in Se atmosphere for 30 minutes in a low vacuum tube furnace with background pressure of 10-2 mbar. The crystallographic properties of Cu-In-Se thin films were identified by X-ray diffractometer (XRD), the surface and cross-sectional morphology of films were observed by scanning electron microscopy (SEM). The chemical compositions of films were characterized by energy dispersive spectroscopy (EDS). It was found that the thickness of Cu-In films deposited on molybdenum-coated soda lime glass were approximately 1 μm. The EDS analysis showed the composition ratio in atomic % of Cu/In as approximately as 0.77. The XRD results reveal that the as-deposited Cu-In films consist of a mixture of copper oxide (CuO) and indium oxide (In2O3) phase at the annealing temperature of 500°C. Furthermore, CuO and In2O3 phase were converted to (112) oriented chalcopyrite copper indium diselenide after selenization process.

CdTe Thin Film Solar Cells: The CdS/SnO2 Front Contact

2001 ◽  
Vol 668 ◽  
Author(s):  
J. Fritsche ◽  
S. Gunst ◽  
A. Thiβen ◽  
R. Gegenwart ◽  
A. Klein ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Tin Dioxide ◽  
Surface Preparation ◽  
Thin Film Solar Cells ◽  
Subsequent Formation ◽  
Coated Glass ◽  
Preparation Conditions

ABSTRACTTin dioxide (SnO2) coated glass is the commonly used substrate for thin film solar cells based on CdTe absorbers. We have investigated the properties of the CdS/SnO2 interface by X-ray and ultraviolet photoelectron spectroscopy. SnO2 coated glass substrates as used for solar cell preparation were cleaned by different procedures such as derinsing, sputtering, heating and annealing in oxygen atmosphere. Different surface properties with a strongly dependent number of defects in the SnO2 band gap are identified. CdS films were deposited stepwise by thermal evaporation to determine the electronic interface properties for different surface preparation conditions. Comparative barrier heights at the CdSSnO2 contact are found for most surface pretreatments. The Fermi level position in these cases is situated in the SnO2 band gap. A different interface behaviour is determined for sputter cleaned SnO2 surfaces, which is attributed to the formation of oxygen vacancies during sputtering and subsequent formation of an interfacial SnOxSy compound.

scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

Identification of Defect Levels in Copper Indium Diselenide (CuInSe2) Thin Films via Photoluminescence Studies

MRS Advances ◽  
2018 ◽  
Vol 3 (52) ◽  
pp. 3135-3141 ◽  
Author(s):  
Niraj Shrestha ◽  
Dhurba R. Sapkota ◽  
Kamala K. Subedi ◽  
Puja Pradhan ◽  
Prakash Koirala ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Intensity ◽  
Copper Indium Diselenide ◽  
Defect States ◽  
Phonon Replica ◽  
Shallow Acceptor ◽  
Copper Indium ◽  
Defect Levels ◽  
Photoluminescence Studies ◽  
In Cis

Photoluminescence (PL) spectroscopy has been used to study the defect levels in thin film copper indium diselenide (CuInSe2, CIS) which we are developing as the absorber layer for the bottom cell of a monolithically grown perovskite/CuInSe2 tandem solar cell. Temperature and laser power dependent PL measurements of thin film CIS for two different Cu/In ratios (0.66 and 0.80) have been performed. The CIS film with Cu/In = 0.80 shows a prominent donor-to-acceptor peak (DAP) involving a shallow acceptor of binding energy ∼22 meV, with phonon replica at ∼32 meV spacing. In contrast, PL measurement of CIS film for Cu/In = 0.66 taken at 20 K exhibited an asymmetric and broad PL spectrum with peaks at 0.845 eV and 0.787 eV. Laser intensity dependent PL revealed that the observed peaks 0.845 eV and 0.787 eV shift towards higher energy (aka j-shift) at ∼11.7 meV/decade and ∼ 8 meV/decade with increase in laser intensity respectively. The asymmetric and broad spectrum together with large j-shift suggests that the observed peaks at 0.845 eV and 0.787 eV were related to band-to-tail (BT) and band-to-impurity (BI) transition, respectively. Such a band-tail-related transition originates from the potential fluctuation of defect states at low temperature. The appearance of band related transition in CIS film with Cu/In = 0.66 is the indicator of the presence of large number of charged defect states.

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
X Ray

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.

Preparation of TiO2 Thin Films and its Superhydrophilic Properties

2009 ◽  
Vol 620-622 ◽  
pp. 695-698
Author(s):  
Jing Ma ◽  
Wen Xiu Liu ◽  
Xiao Guang Qu ◽  
Dan Ni Yu ◽  
Wen Bin Cao
Keyword(s):  
Thin Film ◽  
Tio2 Thin Film ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Soda Lime ◽  
Contact Angles ◽  
Soda Lime Glass ◽  
Water Contact ◽  
Different Temperatures ◽  
Hydrolysis Of

TiO2 thin film was prepared on soda lime glass by hydrolysis of Ti(OC4H9)4 in alcoholic solutions by sol-gel method combined with spin-coating and calcination different temperatures. Prepared samples were characterized by XRD, FESEM, and measurement of contact angles and transmittance. XRD identification reveals that the films are composed of anatase TiO2 when the annealing temperature was set at 450~550 oC. SiO2 layer was coated on the surface of the glass firstly to barrier the diffusing of sodium ions from the substrate. Light-induced superhydrophilicity of the TiO2 thin film has been investigated. To increase the illumination light intensity will decrease the water contact angle. The superhydrophilicity of the TiO2 thin film will disappear more slowly in the dark than that in the field of ultrasound.

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