scholarly journals Hf1−xSixO2 Nanocomposite Coatings Prepared by Ion-Assisted Co-Evaporation Process for Low-Loss and High-LIDT Optics

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2606
Author(s):  
Hongfei Jiao ◽  
Xinshang Niu ◽  
Jinlong Zhang ◽  
Bin Ma ◽  
Xinbin Cheng ◽  
...  

Hf1−xSixO2 nanocomposites with different SiO2 doping ratios were synthesized using an ion-assisted co-evaporation process to achieve dense amorphous Hf1−xSixO2 coatings with low loss and a high laser-induced damage threshold (LIDT). The results showed that the Hf1−xSixO2 nanocomposites (x ≥ 0.20) exhibited excellent comprehensive performance with a wide band gap and a dense amorphous microstructure. High-temperature annealing was carried out to ensure better stoichiometry and lower absorption. Precipitation and regrowth of HfO2 grains were observed from 400 °C to 600 °C during annealing of the Hf0.80Si0.20O2 nanocomposites, resulting in excessive surface roughness. A phenomenological model was proposed to explain the phenomenon. The Hf1−xSixO2 nanocomposites (x = 0.3 and 0.4) maintained a dense amorphous structure with low absorption after annealing. Finally, a 1064-nm Hf0.70Si0.30O2/SiO2 high-performance reflector was prepared and achieved low optical loss (15.1 ppm) and a high LIDT (67 J/cm2).

2020 ◽  
Vol 8 ◽  
Author(s):  
Dahui Wang ◽  
Yinren Shou ◽  
Pengjie Wang ◽  
Jianbo Liu ◽  
Zhusong Mei ◽  
...  

Abstract Single-shot laser-induced damage threshold (LIDT) measurements of multi-type free-standing ultrathin foils were performed in a vacuum environment for 800 nm laser pulses with durations τ ranging from 50 fs to 200 ps. The results show that the laser damage threshold fluences (DTFs) of the ultrathin foils are significantly lower than those of corresponding bulk materials. Wide band gap dielectric targets such as SiN and formvar have larger DTFs than semiconductive and conductive targets by 1–3 orders of magnitude depending on the pulse duration. The damage mechanisms for different types of targets are studied. Based on the measurement, the constrain of the LIDTs on the laser contrast is discussed.


2019 ◽  
Vol 7 (5) ◽  
pp. 1146-1150 ◽  
Author(s):  
Chuang Liu ◽  
Dajiang Mei ◽  
Wangzhu Cao ◽  
Yi Yang ◽  
Yuandong Wu ◽  
...  

The new nonlinear optical material Sr3MnSn2S8 is a noncentrosymmetric structure with a large band gap of 3.02 eV. In addition, Sr3MnSn2S8 possesses a good second harmonic generation (SHG) response, approximately equivalent to that of AgGaS2, and a high laser damage threshold (LDT) about 3 times that of AgGaS2 (AGS).


Optik ◽  
2020 ◽  
Vol 206 ◽  
pp. 164306 ◽  
Author(s):  
Wenzhe Cai ◽  
Yingtian Yang ◽  
Yongqiao Zhu ◽  
Dawei Li ◽  
Cheng Xu

Author(s):  
Bojun Peng ◽  
Liang Xu ◽  
Jian Zeng ◽  
Xiaopeng Qi ◽  
Youwen Yang ◽  
...  

The development of non-precious, high-performance and environmentally friendly wide band gap semiconductor composite photocatalysts is highly desirable. Here we report two-dimensional (2D) GaN/SiC-based multilayer van der Waals heterostructures for hydrogen...


2012 ◽  
Vol 26 (14) ◽  
pp. 1250080 ◽  
Author(s):  
A. BAHARI ◽  
A. RAMZANNEJAD

There are some issues such as tunneling, leakage currents and boron diffusion through the ultra thin SiO 2 which are threatening ultra thin SiO 2 dielectric as a good gate dielectric. A very obvious alternative material is HfO 2, due to its high dielectric constant, wide band gap and good thermal stability on silicon substrate. We have thus demonstrated a number of processes to synthesize La 2 O 3/ HfO 2 and studied its nano structural properties with using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. The obtained results show that La 2 O 3/ HfO 2 (at 500°C with amorphous structure) can be introduced as a good gate dielectric for the future of complementary metal insulator semiconductor (CMIS) device.


2014 ◽  
Vol 309 ◽  
pp. 194-199 ◽  
Author(s):  
Cheng Xu ◽  
Peng Yi ◽  
Heliang Fan ◽  
Jianwei Qi ◽  
Shuai Yang ◽  
...  

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