Mn-Based tin sulfide Sr3MnSn2S8 with a wide band gap and strong nonlinear optical response

2019 ◽  
Vol 7 (5) ◽  
pp. 1146-1150 ◽  
Author(s):  
Chuang Liu ◽  
Dajiang Mei ◽  
Wangzhu Cao ◽  
Yi Yang ◽  
Yuandong Wu ◽  
...  

The new nonlinear optical material Sr3MnSn2S8 is a noncentrosymmetric structure with a large band gap of 3.02 eV. In addition, Sr3MnSn2S8 possesses a good second harmonic generation (SHG) response, approximately equivalent to that of AgGaS2, and a high laser damage threshold (LDT) about 3 times that of AgGaS2 (AGS).

2019 ◽  
Vol 48 (14) ◽  
pp. 4484-4488 ◽  
Author(s):  
Yi Huang ◽  
Kui Wu ◽  
Jianian Cheng ◽  
Yu Chu ◽  
Zhihua Yang ◽  
...  

A promising IR nonlinear optical material Li2ZnGeS4 with a diamond-like configuration and high optical performance is reported.


2019 ◽  
Vol 48 (36) ◽  
pp. 13529-13535 ◽  
Author(s):  
Qi Wu ◽  
Xian Liu ◽  
Fei Liang ◽  
Siran Xu ◽  
Hongbing Pi ◽  
...  

This study reports, for the first time, the second-harmonic generation (SHG) property of Pb7F12Cl2 as a promising infrared nonlinear optical (NLO) material.


2018 ◽  
Vol 47 (6) ◽  
pp. 1911-1917 ◽  
Author(s):  
Xiaoxiao Wang ◽  
Xingxing Jiang ◽  
Hongming Liu ◽  
Lei Yang ◽  
Zheshuai Lin ◽  
...  

A new NLO material has been designedviaion-substitution from a similar structure. It shows an enhanced SHG response equalling to that of KH2PO4(KDP) and a high laser damage threshold of 67 MW cm−1.


2019 ◽  
Vol 55 (96) ◽  
pp. 14510-14513 ◽  
Author(s):  
Wangzhu Cao ◽  
Dajiang Mei ◽  
Yi Yang ◽  
Yuanwang Wu ◽  
Lingyun Zhang ◽  
...  

From CuFeS2, the introduction of Ge leads to an increase in band gap. The ordered arrangement of NLO active units [GeS4] results in a strong SHG response. Finally, Ba6Cu2FeGe4S16 exhibits good NLO performance (SHG, 1.5 × AgGaSe2; LDT, 2 × AgGaSe2).


1990 ◽  
Vol 214 ◽  
Author(s):  
Linda S. Sapochak ◽  
David W. Polis ◽  
Larry R. Dalton ◽  
Charles W. Spangler

ABSTRACTRecent activity in the development of nonlinear optical (NLO) materials with high second order susceptibilities has prompted the development of a wide variety of pendant polymers which possess desirable properties for device development, including high Tg minimal relaxation of the poled matrix, and high laser damage threshold. Ideal candidates for such systems are asymmetrically substituted oligomers of polyacetylenes such as dimethylaminonitrostilbene (DANS) and corresponding higher order oligomers. We report here a preliminary study of the synthesis of asymmetrically substituted donor/acceptor diphenyl-capped polyenes and thienylene vinylene oligomers attached as pendant moieties on polyvinylphenol (PVP) for second harmonic generation.


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