scholarly journals Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1877
Author(s):  
Xuan Li ◽  
Jianping Liu ◽  
Xujun Su ◽  
Siyi Huang ◽  
Aiqin Tian ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Indium Content ◽  
Multiple Quantum ◽  
Free Standing ◽  
Recombination Lifetime ◽  
Indium Composition ◽  
Superlattice Structure ◽  
Diffraction Patterns

We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.

Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

2015 ◽  
Vol 631 ◽  
pp. 283-287 ◽  
Author(s):  
Tao Lin ◽  
Hang Sun ◽  
Haoqing Zhang ◽  
Yonggang Wang ◽  
Nan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Indium Content

High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Multiple Quantum ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Si Substrates

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

V-Defect and Dislocation Analysis in InGaN Multiple Quantum Wells on Patterned Sapphire Substrate

2018 ◽  
Vol 787 ◽  
pp. 37-41
Author(s):  
Huan You Wang ◽  
Qiao Lai Tan ◽  
Gui Jin
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Cross Sectional ◽  
Patterned Sapphire Substrate ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Multi Quantum Well ◽  
Patterned Sapphire Substrates

InGaN/GaN multiquantum well (MQW) structures have been grown on cone-shaped patterned sapphire substrates (CPSS) by metalorganic chemical vapor deposition (MOCVD). From the transmission electron microscopy (TEM) results, we found that most of the threading dislocations (TDs) in the trench region of the CPSS were bent by lateral growth mode. Also the staircase-like TDs were observed near the slant region of the cone pattern, they converged at the slope of the cone patterned region by staircase-upward propagation, which seems to effectively prevent TDs from vertical propagation in the trench region. The associated dislocation runs up into the overgrown GaN layer and MQW, and some (a+c) dislocations were shown to decompose inside the multi-quantum well, giving rise to a misfit segment in the c-plane and a V-shape defect. From cross-sectional TEM, we found that all V defects are not always connected with TDs at their bottom, some V defects are generated from the stacking mismatch boundaries induced by stacking faults which are formed within the MQW due to the strain relaxation.

High Indium Content Ingan Films and Quantum Wells.

1997 ◽  
Vol 482 ◽  
Author(s):  
W. Van Der Stricht ◽  
K. Jacobs ◽  
I. Moerman ◽  
P. Demeester ◽  
L. Considine ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rotating Disk ◽  
Growth Conditions ◽  
Indium Content ◽  
X Ray ◽  
High Indium Content ◽  
Diffraction Patterns ◽  
Very High ◽  
Characterisation Techniques ◽  
Incorporation Efficiency

AbstractInGaN films and InGaN/GaN quantum wells with high indium content have been grown by MOVPE and characterised to evaluate the growth process and the indium incorporation efficiency. The characterisation techniques include photoluminescence, DC X-ray and TEM. The closed spaced vertical rotating disk reactor configuration results in a very high Indium incorporation for InGaN material, compared to other configurations. InGaN layers with an indium composition up to 56 % have been deposited which still exhibit very good optical properties (intense PL emission). The influence of various growth conditions on the InGaN composition and quality have been investigated to optimize the layer quality. TEM diffraction patterns have shown that the ternary InGaN layer can be chemically ordered. The In and Ga atoms occupy respectively the two simple hexagonal sublattice sites related by the glide mirrors and helicoidal axes of the P6 3mc symmetry group of the wurtzite GaN.

scholarly journals Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

2000 ◽  
Vol 77 (19) ◽  
pp. 2988-2990 ◽  
Author(s):  
Yen-Sheng Lin ◽  
Kung-Jeng Ma ◽  
C. Hsu ◽  
Shih-Wei Feng ◽  
Yung-Chen Cheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Composition Fluctuation
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