Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells

2006 ◽  
Vol 252 (11) ◽  
pp. 3922-3927 ◽  
Author(s):  
Chuan-Pu Liu ◽  
Yen-Lin Lai ◽  
Zheng-Quan Chen
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interface Characterization

Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

2015 ◽  
Vol 631 ◽  
pp. 283-287 ◽  
Author(s):  
Tao Lin ◽  
Hang Sun ◽  
Haoqing Zhang ◽  
Yonggang Wang ◽  
Nan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Indium Content

scholarly journals Comparison of multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity

1996 ◽  
Vol 11 (12) ◽  
pp. 1863-1872 ◽  
Author(s):  
P J Klar ◽  
D Wolverson ◽  
D E Ashenford ◽  
B Lunn ◽  
Torsten Henning
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

2000 ◽  
Vol 77 (19) ◽  
pp. 2988-2990 ◽  
Author(s):  
Yen-Sheng Lin ◽  
Kung-Jeng Ma ◽  
C. Hsu ◽  
Shih-Wei Feng ◽  
Yung-Chen Cheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Composition Fluctuation

Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

2002 ◽  
Vol 81 (27) ◽  
pp. 5120-5122 ◽  
Author(s):  
H. H. Lee ◽  
M. S. Yi ◽  
H. W. Jang ◽  
Y.-T. Moon ◽  
S.-J. Park ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

The influence of quasi-quantum dots on the physical properties of blue InGaN/GaN multiple quantum wells

2006 ◽  
Vol 17 (17) ◽  
pp. 4300-4306 ◽  
Author(s):  
Yen-Lin Lai ◽  
Chuan-Pu Liu ◽  
Tao-Hung Hsueh ◽  
Yung-Hsiang Lin ◽  
Hung-Chin Chung ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Physical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy

2001 ◽  
Vol 225 (2-4) ◽  
pp. 550-555 ◽  
Author(s):  
Chin-An Chang ◽  
Cheng-Zu Wu ◽  
Pai-Yong Wang ◽  
Xing-Jian Guo ◽  
Yi-Tsuo Wu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Inas Quantum Dots

Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

2002 ◽  
Vol 744 ◽  
Author(s):  
Clayton L. Workman ◽  
Zhiming Wang ◽  
Wenquan Ma ◽  
Christi E. George ◽  
R. Panneer Selvam ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Infrared Detector ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Band Offset ◽  
Multiple Quantum ◽  
Material System ◽  
Intersubband Transitions ◽  
Long Wavelength ◽  
Long Wavelength Infrared

ABSTRACTWe report on intersubband transitions in InxGa1-xAs/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The conduction band offset for this material system is larger than that of the well known GaAs/AlGaAs system, thus making it possible to design, grow, and fabricate quantum well infrared photodetectors operational beyond the 14 μm spectral region with minimized dark current. We have grown InxGa1-xAs/AlGaAs MQWs with indium compositions ranging from x = 0.08 to 0.20 verified by in situ RHEED oscillations, band offset measurements, and high-resolution X-ray diffraction. Band-to-band transitions were verified by photoluminescence measurements, and intersubband transitions were measured using Fourier transform infrared (FTIR) spectroscopy. Due to the high strain and introduction of dislocations associated with the high indium content, wells with indium compositions above ∼ 0.12 did not result in intersubband transitions at silicon doping levels of 2×1018 cm-3. A thick linear graded InxGa1-xAs buffer was grown below the MQW structures to reduce the strain and resulting dislocations. Intersubband transitions were measured in InxGa1-xAs wells with indium compositions of x = 0.20 and greater when grown on top of the linear graded buffer. In addition to these results, FTIR measurements on InGaAs/AlGaAs MQW multi-color, long-wavelength infrared detector structures are reported.

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