Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition

2002 ◽  
Vol 91 (3) ◽  
pp. 1166-1170 ◽  
Author(s):  
H. K. Cho ◽  
J. Y. Lee ◽  
C. S. Kim ◽  
G. M. Yang
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Multiple Quantum Wells ◽  
Optical Characteristics ◽  
Multiple Quantum ◽  
Indium Composition

Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition

2010 ◽  
Vol 108 (7) ◽  
pp. 073504 ◽  
Author(s):  
T. S. Ko ◽  
T. C. Lu ◽  
L. F. Zhuo ◽  
W. L. Wang ◽  
M. H. Liang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Multiple Quantum Wells ◽  
Optical Characteristics ◽  
Multiple Quantum

Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition

2002 ◽  
Vol 91 (3) ◽  
pp. 1104-1107 ◽  
Author(s):  
H. K. Cho ◽  
J. Y. Lee ◽  
J. H. Song ◽  
P. W. Yu ◽  
G. M. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Indium Composition

Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions

1999 ◽  
Vol 75 (17) ◽  
pp. 2545-2547 ◽  
Author(s):  
Yong-Hwan Kwon ◽  
G. H. Gainer ◽  
S. Bidnyk ◽  
Y. H. Cho ◽  
J. J. Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Optical Characteristics ◽  
Multiple Quantum

Optical characteristics of a-plane InGaN∕GaN multiple quantum wells with different well widths

2007 ◽  
Vol 90 (18) ◽  
pp. 181122 ◽  
Author(s):  
T. S. Ko ◽  
T. C. Lu ◽  
T. C. Wang ◽  
M. H. Lo ◽  
J. R. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Optical Characteristics ◽  
Multiple Quantum

scholarly journals Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1877
Author(s):  
Xuan Li ◽  
Jianping Liu ◽  
Xujun Su ◽  
Siyi Huang ◽  
Aiqin Tian ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Indium Content ◽  
Multiple Quantum ◽  
Free Standing ◽  
Recombination Lifetime ◽  
Indium Composition ◽  
Superlattice Structure ◽  
Diffraction Patterns

We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.

Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition

2001 ◽  
Vol 231 (4) ◽  
pp. 466-473 ◽  
Author(s):  
Hyung Koun Cho ◽  
Jeong Yong Lee ◽  
Chi Sun Kim ◽  
Gye Mo Yang ◽  
Nikhil Sharma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Microstructural Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Indium Composition
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