Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures

2011 ◽  
Vol 109 (7) ◽  
pp. 073106 ◽  
Author(s):  
Lei Liu ◽  
Lei Wang ◽  
Ding Li ◽  
Ningyang Liu ◽  
Lei Li ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diode ◽  
Strain Relaxation ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Indium Composition

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

2013 ◽  
Vol 22 (7) ◽  
pp. 076803 ◽  
Author(s):  
Wen-Yu Cao ◽  
Yong-Fa He ◽  
Zhao Chen ◽  
Wei Yang ◽  
Wei-Min Du ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diode ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties

Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition

2002 ◽  
Vol 91 (3) ◽  
pp. 1104-1107 ◽  
Author(s):  
H. K. Cho ◽  
J. Y. Lee ◽  
J. H. Song ◽  
P. W. Yu ◽  
G. M. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Indium Composition

scholarly journals Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1877
Author(s):  
Xuan Li ◽  
Jianping Liu ◽  
Xujun Su ◽  
Siyi Huang ◽  
Aiqin Tian ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Indium Content ◽  
Multiple Quantum ◽  
Free Standing ◽  
Recombination Lifetime ◽  
Indium Composition ◽  
Superlattice Structure ◽  
Diffraction Patterns

We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.

Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode

2004 ◽  
Vol 43 (No. 3A) ◽  
pp. L340-L342 ◽  
Author(s):  
Masahiro Nomura ◽  
Munetaka Arita ◽  
Satoshi Ashihara ◽  
Masao Nishioka ◽  
Yasuhiko Arakawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diode ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Differential Absorption
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