scholarly journals The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O2/He Plasmas for Thermopile Devices

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4278
Author(s):  
Na Zhou ◽  
Junjie Li ◽  
Haiyang Mao ◽  
Hao Liu ◽  
Jinbiao Liu ◽  
...  
Keyword(s):  
High Selectivity ◽  
Microelectromechanical Systems ◽  
Hydrogen Bromide ◽  
Reactive Ion Etching ◽  
Mems Devices ◽  
Plasma Process ◽  
Ion Etching ◽  
Heavily Doped ◽  
Hbr Plasma

Heavily doped polysilicon layers have been widely used in the fabrication of microelectromechanical systems (MEMS). However, the investigation of high selectivity, anisotropy, and excellent uniformity of heavily doped polysilicon etching is limited. In this work, reactive ion etching of undoped and heavily doped polysilicon-based hydrogen bromide (HBr) plasmas have been compared. The mechanism of etching of heavily doped polysilicon is studied in detail. The final results demonstrate that the anisotropy profile of heavily doped polysilicon can be obtained based on a HBr plasma process. An excellent uniformity of resistance of the thermocouples reached ± 2.11%. This technology provides an effective way for thermopile and other MEMS devices fabrication.

Reactive ion etching of Si1−xGex alloy with hydrogen bromide

2004 ◽  
Vol 224 (1-4) ◽  
pp. 222-226 ◽  
Author(s):  
C.S. Wang ◽  
D.Y. Shu ◽  
W.Y. Hsieh ◽  
M.-J. Tsai
Keyword(s):  
Hydrogen Bromide ◽  
Reactive Ion Etching ◽  
Ion Etching

Reactive ion etching of Si1−xGex alloy with hydrogen bromide

2001 ◽  
Vol 227-228 ◽  
pp. 801-804 ◽  
Author(s):  
Lin Guo ◽  
Kaicheng Li ◽  
Daoguang Liu ◽  
Yihong Ou ◽  
Jing Zhang ◽  
...  
Keyword(s):  
Hydrogen Bromide ◽  
Reactive Ion Etching ◽  
Ion Etching

High Selectivity Magnetically Enhanced Reactive Ion Etching of Boron Nitride Films

1994 ◽  
Vol 141 (12) ◽  
pp. 3456-3462 ◽  
Author(s):  
Donna Cote ◽  
Son Nguyen ◽  
David Dobuzinsky ◽  
Cathy Basa ◽  
Bernhard Neureither
Keyword(s):  
Boron Nitride ◽  
High Selectivity ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Boron Nitride Films

Advanced deep reactive ion etching: a versatile tool for microelectromechanical systems

1998 ◽  
Vol 8 (4) ◽  
pp. 272-278 ◽  
Author(s):  
P-A Clerc ◽  
L Dellmann ◽  
F Grétillat ◽  
M-A Grétillat ◽  
P-F Indermühle ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Versatile Tool

Fabrication of Sub-Micron Silicon Vias by Deep Reactive Ion Etching

2005 ◽  
Author(s):  
Shawn X. D. Zhang ◽  
Ronald Hon ◽  
S. W. Ricky Lee
Keyword(s):  
Aspect Ratio ◽  
Mechanical System ◽  
Reactive Ion Etching ◽  
Micro Electro Mechanical System ◽  
Experimental Results ◽  
Mems Devices ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
3D Packaging ◽  
Silicon Vias

Deep reactive ion etching (DRIE) is a major microfabrication process for micro-electro-mechanical system (MEMS) devices. In recent years DRIE is also applied to make through-silicon-vias (TSVs) for 3D packaging. Typical DRIE-formed TSVs are in the range of a few microns to tens of microns. In the present study, silicon vias with diameters in the sub-micron range (0.5 μm and 0.8 μm) are attempted. For comparison purposes, larger silicon vias (1 μm and 3 μm) are fabricated as well. In this paper, the microfabrication processes are described. The experimental results and comparisons in terms of via uniformity, aspect ratio dependent etching, undercutting, and effects of various mask materials are discussed in detail.

Micromachining Techniques for Advanced SiC MEMS

2000 ◽  
Vol 640 ◽  
Author(s):  
Mehran Mehregany ◽  
Christian A. Zorman
Keyword(s):  
Thin Films ◽  
Microelectromechanical Systems ◽  
Reactive Ion Etching ◽  
Mechanical Polishing ◽  
Surface Micromachining ◽  
Ion Etching ◽  
Wet Chemical ◽  
Sacrificial Layers ◽  
Lift Off ◽  
Sic Films

ABSTRACTThis paper reviews the development of a multilayer, micromolding-based surface micromachining process for SiC microelectromechanical systems (MEMS). The micromolding process uses polysilicon and SiO2 thin films that are deposited onto polysilicon and SiO2 sacrificial layers, patterned into micromolds by reactive ion etching, filled with polycrystalline SiC (poly-SiC), planarized by mechanical polishing, and eventually dissolved and released in selective wet chemical etchants. In addition, a SiC lift-off technique that exploits the microstructural differences between SiC films deposited on Si, SiO2 and Si3N4 surfaces has been developed. The micromolding and lift-off techniques are being used as the basic patterning processes for a four-layer, poly-SiC surface micromachining process that we call the MUSiC (Multi-User SiC) process.

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